JP2005539359A5 - - Google Patents
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- Publication number
- JP2005539359A5 JP2005539359A5 JP2004538207A JP2004538207A JP2005539359A5 JP 2005539359 A5 JP2005539359 A5 JP 2005539359A5 JP 2004538207 A JP2004538207 A JP 2004538207A JP 2004538207 A JP2004538207 A JP 2004538207A JP 2005539359 A5 JP2005539359 A5 JP 2005539359A5
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electrons
- detector
- electric field
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims description 83
- 230000005684 electric field Effects 0.000 claims description 79
- 230000003321 amplification Effects 0.000 claims description 55
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 55
- 239000002245 particle Substances 0.000 claims description 50
- 230000007613 environmental effect Effects 0.000 claims description 43
- 150000002500 ions Chemical class 0.000 claims description 27
- 230000033001 locomotion Effects 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 20
- 238000007654 immersion Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 7
- 230000003993 interaction Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000000523 sample Substances 0.000 description 73
- 230000008901 benefit Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000012472 biological sample Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41169902P | 2002-09-18 | 2002-09-18 | |
| US33069102A | 2002-12-27 | 2002-12-27 | |
| PCT/US2003/029446 WO2004027808A2 (en) | 2002-09-18 | 2003-09-18 | Particle-optical device and detection means |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005539359A JP2005539359A (ja) | 2005-12-22 |
| JP2005539359A5 true JP2005539359A5 (enExample) | 2009-09-03 |
| JP4616938B2 JP4616938B2 (ja) | 2011-01-19 |
Family
ID=32033317
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004538207A Expired - Lifetime JP4616938B2 (ja) | 2002-09-18 | 2003-09-18 | 環境走査電子顕微鏡および検出器 |
| JP2004538208A Expired - Lifetime JP4520303B2 (ja) | 2002-09-18 | 2003-09-18 | 荷電粒子ビームシステム |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004538208A Expired - Lifetime JP4520303B2 (ja) | 2002-09-18 | 2003-09-18 | 荷電粒子ビームシステム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6972412B2 (enExample) |
| EP (3) | EP1540693A4 (enExample) |
| JP (2) | JP4616938B2 (enExample) |
| KR (1) | KR101015116B1 (enExample) |
| AU (2) | AU2003275028A1 (enExample) |
| WO (2) | WO2004027808A2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8110814B2 (en) | 2003-10-16 | 2012-02-07 | Alis Corporation | Ion sources, systems and methods |
| US7157718B2 (en) * | 2004-04-30 | 2007-01-02 | The Regents Of The University Of Michigan | Microfabricated radiation detector assemblies methods of making and using same and interface circuit for use therewith |
| JP4519567B2 (ja) * | 2004-08-11 | 2010-08-04 | 株式会社日立ハイテクノロジーズ | 走査型電子顕微鏡およびこれを用いた試料観察方法 |
| ATE532203T1 (de) * | 2004-08-27 | 2011-11-15 | Fei Co | Lokalisierte plasmabehandlung |
| JP4636897B2 (ja) * | 2005-02-18 | 2011-02-23 | 株式会社日立ハイテクサイエンスシステムズ | 走査電子顕微鏡 |
| WO2007067296A2 (en) * | 2005-12-02 | 2007-06-14 | Alis Corporation | Ion sources, systems and methods |
| JP4911567B2 (ja) * | 2005-12-16 | 2012-04-04 | 株式会社トプコン | 荷電粒子ビーム装置 |
| JP4597077B2 (ja) * | 2006-03-14 | 2010-12-15 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| EP2002459B1 (en) * | 2006-03-31 | 2014-11-26 | Fei Company | Improved detector for charged particle beam instrument |
| US7872236B2 (en) * | 2007-01-30 | 2011-01-18 | Hermes Microvision, Inc. | Charged particle detection devices |
| JP5758577B2 (ja) * | 2007-02-06 | 2015-08-05 | エフ・イ−・アイ・カンパニー | 高圧荷電粒子ビーム・システム |
| JP5276860B2 (ja) * | 2008-03-13 | 2013-08-28 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| EP2105944A1 (en) | 2008-03-28 | 2009-09-30 | FEI Company | Environmental cell for a particle-optical apparatus |
| US7791020B2 (en) | 2008-03-31 | 2010-09-07 | Fei Company | Multistage gas cascade amplifier |
| KR100961202B1 (ko) | 2008-04-29 | 2010-06-09 | 주식회사 하이닉스반도체 | 원자진동을 이용한 불균일 이온주입장치 및 방법 |
| US8981294B2 (en) | 2008-07-03 | 2015-03-17 | B-Nano Ltd. | Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment |
| DE602008005460D1 (de) * | 2008-10-08 | 2011-04-21 | Integrated Circuit Testing | Erkennungsvorrichtung für geladene Teilchen und Erkennungsverfahren |
| JP4913854B2 (ja) * | 2008-10-08 | 2012-04-11 | アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー | 荷電粒子検出装置及び検出方法 |
| US7947953B2 (en) * | 2008-10-08 | 2011-05-24 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle detection apparatus and detection method |
| US7960697B2 (en) * | 2008-10-23 | 2011-06-14 | Hermes-Microvision, Inc. | Electron beam apparatus |
| US8299432B2 (en) * | 2008-11-04 | 2012-10-30 | Fei Company | Scanning transmission electron microscope using gas amplification |
| US7919760B2 (en) * | 2008-12-09 | 2011-04-05 | Hermes-Microvision, Inc. | Operation stage for wafer edge inspection and review |
| US8094924B2 (en) * | 2008-12-15 | 2012-01-10 | Hermes-Microvision, Inc. | E-beam defect review system |
| US9679741B2 (en) | 2010-11-09 | 2017-06-13 | Fei Company | Environmental cell for charged particle beam system |
| US8604427B2 (en) * | 2012-02-02 | 2013-12-10 | Applied Materials Israel, Ltd. | Three-dimensional mapping using scanning electron microscope images |
| CN104508791B (zh) * | 2012-07-30 | 2017-03-01 | Fei 公司 | 环境扫描电子显微镜气体喷射系统 |
| EP2959287A4 (en) * | 2013-02-20 | 2016-10-19 | Nano Ltd B | scanning Electron Microscope |
| US9123506B2 (en) | 2013-06-10 | 2015-09-01 | Fei Company | Electron beam-induced etching |
| US9418819B2 (en) * | 2013-09-06 | 2016-08-16 | Kla-Tencor Corporation | Asymmetrical detector design and methodology |
| US9715724B2 (en) | 2014-07-29 | 2017-07-25 | Applied Materials Israel Ltd. | Registration of CAD data with SEM images |
| US9633816B2 (en) | 2015-05-18 | 2017-04-25 | Fei Company | Electron beam microscope with improved imaging gas and method of use |
| KR101693539B1 (ko) * | 2015-11-12 | 2017-01-06 | 한국표준과학연구원 | 고분해능 광-전자 융합현미경 |
| EP3249676B1 (en) | 2016-05-27 | 2018-10-03 | FEI Company | Dual-beam charged-particle microscope with in situ deposition functionality |
| KR20200013567A (ko) * | 2018-11-19 | 2020-02-07 | 부경호 | 극자외선(euv) 노광에 사용되는 마스크 및 극자외선 노광방법 |
| US11152189B2 (en) * | 2020-03-18 | 2021-10-19 | Fei Company | Method and system for plasma assisted low vacuum charged-particle microscopy |
| DE102020123567B4 (de) * | 2020-09-09 | 2025-02-13 | Carl Zeiss Multisem Gmbh | Vielzahl-Teilchenstrahl-System mit Kontrast-Korrektur-Linsen-System |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4249077A (en) * | 1978-08-04 | 1981-02-03 | Crawford Charles K | Ion charge neutralization for electron beam devices |
| US4639301B2 (en) | 1985-04-24 | 1999-05-04 | Micrion Corp | Focused ion beam processing |
| EP0275306B1 (en) * | 1986-08-01 | 1990-10-24 | Electro-Scan Corporation | Multipurpose gaseous detector device for electron microscopes |
| US4785182A (en) | 1987-05-21 | 1988-11-15 | Electroscan Corporation | Secondary electron detector for use in a gaseous atmosphere |
| JP3038901B2 (ja) * | 1990-11-26 | 2000-05-08 | 株式会社ニコン | 環境制御型走査電子顕微鏡 |
| JPH05174768A (ja) | 1991-02-26 | 1993-07-13 | Nikon Corp | 環境制御型走査電子顕微鏡 |
| JP3148353B2 (ja) * | 1991-05-30 | 2001-03-19 | ケーエルエー・インストルメンツ・コーポレーション | 電子ビーム検査方法とそのシステム |
| JPH0547331A (ja) * | 1991-08-20 | 1993-02-26 | Nikon Corp | 走査電子顕微鏡 |
| JP2919170B2 (ja) * | 1992-03-19 | 1999-07-12 | 株式会社日立製作所 | 走査電子顕微鏡 |
| US5184525A (en) * | 1992-04-15 | 1993-02-09 | The Perkin-Elmer Corporation | Mechanism for positioning a carrier |
| JP3730263B2 (ja) * | 1992-05-27 | 2005-12-21 | ケーエルエー・インストルメンツ・コーポレーション | 荷電粒子ビームを用いた自動基板検査の装置及び方法 |
| JPH0594941U (ja) * | 1992-05-27 | 1993-12-24 | 日新電機株式会社 | Ｅ×ｂ回転照射装置 |
| JPH0660841A (ja) * | 1992-06-11 | 1994-03-04 | Nikon Corp | 走査型電子顕微鏡 |
| US5396067A (en) * | 1992-06-11 | 1995-03-07 | Nikon Corporation | Scan type electron microscope |
| JPH06168695A (ja) * | 1992-11-30 | 1994-06-14 | Nikon Corp | 荷電粒子顕微鏡 |
| US6172363B1 (en) * | 1996-03-05 | 2001-01-09 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
| JP3559678B2 (ja) * | 1997-04-09 | 2004-09-02 | 株式会社日立製作所 | 電位測定方法及びその装置並びに導通検査方法及びその装置 |
| JP3547143B2 (ja) * | 1997-07-22 | 2004-07-28 | 株式会社日立製作所 | 試料作製方法 |
| AU748781B2 (en) * | 1997-12-08 | 2002-06-13 | Fei Company | Environmental SEM with a magnetic field for improved secondary electron detection |
| AU748840B2 (en) * | 1997-12-08 | 2002-06-13 | Fei Company | Environmental SEM with multipole fields for improved secondary electron detection |
| US5945672A (en) | 1998-01-29 | 1999-08-31 | Fei Company | Gaseous backscattered electron detector for an environmental scanning electron microscope |
| US6525317B1 (en) * | 1998-12-30 | 2003-02-25 | Micron Technology Inc. | Reduction of charging effect and carbon deposition caused by electron beam devices |
| JP2001155675A (ja) * | 1999-11-25 | 2001-06-08 | Hitachi Ltd | 走査電子顕微鏡等の低真空二次電子検出装置 |
| WO2001041180A1 (de) * | 1999-11-29 | 2001-06-07 | Leo Elektronenmikroskopie Gmbh | Detektor für ein rasterelektronenmikroskop mit variablem druck und rasterelektronenmikroskop mit einem solchen detektor |
| EP1299897B1 (de) * | 2000-07-07 | 2008-04-09 | Carl Zeiss NTS GmbH | Detektor für variierende druckbereiche und elektronenmikroskop mit einem entsprechenden detektor |
| JP2002289129A (ja) * | 2001-03-26 | 2002-10-04 | Jeol Ltd | 低真空走査電子顕微鏡 |
-
2003
- 2003-09-18 AU AU2003275028A patent/AU2003275028A1/en not_active Abandoned
- 2003-09-18 KR KR1020057004615A patent/KR101015116B1/ko not_active Expired - Lifetime
- 2003-09-18 EP EP03797915A patent/EP1540693A4/en not_active Withdrawn
- 2003-09-18 AU AU2003276900A patent/AU2003276900A1/en not_active Abandoned
- 2003-09-18 JP JP2004538207A patent/JP4616938B2/ja not_active Expired - Lifetime
- 2003-09-18 US US10/664,796 patent/US6972412B2/en not_active Expired - Lifetime
- 2003-09-18 JP JP2004538208A patent/JP4520303B2/ja not_active Expired - Lifetime
- 2003-09-18 EP EP03759297.9A patent/EP1540692B1/en not_active Expired - Lifetime
- 2003-09-18 WO PCT/US2003/029446 patent/WO2004027808A2/en not_active Ceased
- 2003-09-18 WO PCT/US2003/029447 patent/WO2004027809A2/en not_active Ceased
- 2003-09-18 EP EP11172096.7A patent/EP2372743B1/en not_active Expired - Lifetime
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