JP2005536161A5 - - Google Patents

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Publication number
JP2005536161A5
JP2005536161A5 JP2004530071A JP2004530071A JP2005536161A5 JP 2005536161 A5 JP2005536161 A5 JP 2005536161A5 JP 2004530071 A JP2004530071 A JP 2004530071A JP 2004530071 A JP2004530071 A JP 2004530071A JP 2005536161 A5 JP2005536161 A5 JP 2005536161A5
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JP
Japan
Prior art keywords
supply voltage
voltage
input
reconfigurable device
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004530071A
Other languages
English (en)
Japanese (ja)
Other versions
JP4201202B2 (ja
JP2005536161A (ja
Filing date
Publication date
Priority claimed from US10/224,093 external-priority patent/US6859084B2/en
Application filed filed Critical
Publication of JP2005536161A publication Critical patent/JP2005536161A/ja
Publication of JP2005536161A5 publication Critical patent/JP2005536161A5/ja
Application granted granted Critical
Publication of JP4201202B2 publication Critical patent/JP4201202B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004530071A 2002-08-19 2003-08-01 パス装置用低電圧変調回路 Expired - Fee Related JP4201202B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/224,093 US6859084B2 (en) 2002-08-19 2002-08-19 Low-power voltage modulation circuit for pass devices
PCT/EP2003/008576 WO2004019495A2 (en) 2002-08-19 2003-08-01 Supply voltage modulation circuit for mos transistors, reconfigurable logic device and method of processing an input signal to a logic circuit

Publications (3)

Publication Number Publication Date
JP2005536161A JP2005536161A (ja) 2005-11-24
JP2005536161A5 true JP2005536161A5 (enExample) 2006-01-12
JP4201202B2 JP4201202B2 (ja) 2008-12-24

Family

ID=31715215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004530071A Expired - Fee Related JP4201202B2 (ja) 2002-08-19 2003-08-01 パス装置用低電圧変調回路

Country Status (7)

Country Link
US (1) US6859084B2 (enExample)
EP (1) EP1537666B1 (enExample)
JP (1) JP4201202B2 (enExample)
AT (1) ATE401700T1 (enExample)
AU (1) AU2003260358A1 (enExample)
DE (1) DE60322231D1 (enExample)
WO (1) WO2004019495A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946903B2 (en) * 2003-07-28 2005-09-20 Elixent Limited Methods and systems for reducing leakage current in semiconductor circuits
KR100687867B1 (ko) * 2004-07-21 2007-02-27 주식회사 하이닉스반도체 저전력 고성능 인버터 회로
US20070008004A1 (en) * 2005-07-11 2007-01-11 Vikram Santurkar Apparatus and methods for low-power routing circuitry in programmable logic devices
US7362126B1 (en) * 2005-08-17 2008-04-22 National Semiconductor Corporation Floating CMOS input circuit that does not draw DC current
US20070047364A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Methods and apparatus for varying a supply voltage or reference voltage using independent control of diode voltage in asymmetrical double-gate devices
US7567096B2 (en) * 2007-03-21 2009-07-28 Qualcomm Incorporated Circuit device and method of controlling a voltage swing
DE102008002749A1 (de) * 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
US9166567B2 (en) * 2013-03-15 2015-10-20 University Of California, San Diego Data-retained power-gating circuit and devices including the same
EP4158779A4 (en) 2020-06-02 2024-03-20 INTEL Corporation DYNAMIC FLOATING POWER RAIL FOR CDAC CIRCUITS
CN115201542A (zh) * 2021-04-09 2022-10-18 联芸科技(杭州)股份有限公司 电压检测电路
CN114389598A (zh) * 2022-03-23 2022-04-22 武汉市聚芯微电子有限责任公司 一种转换装置、接口电路及芯片

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208926A (ja) 1983-05-13 1984-11-27 Hitachi Ltd シユミツトトリガ回路
JP2770941B2 (ja) 1985-12-10 1998-07-02 シチズン時計株式会社 シユミツトトリガ回路
JPS62178015A (ja) 1986-01-31 1987-08-05 Nippon Telegr & Teleph Corp <Ntt> デイジタル論理ｆｅｔ回路
JP2585348B2 (ja) * 1988-02-22 1997-02-26 株式会社東芝 不揮発性半導体記憶装置
US5684415A (en) * 1995-12-22 1997-11-04 Symbios Logic Inc. 5 volt driver in a 3 volt CMOS process
US5894227A (en) * 1996-03-15 1999-04-13 Translogic Technology, Inc. Level restoration circuit for pass logic devices
US5828231A (en) * 1996-08-20 1998-10-27 Xilinx, Inc. High voltage tolerant input/output circuit
US5767728A (en) 1996-09-05 1998-06-16 International Business Machines Corporation Noise tolerant CMOS inverter circuit having a resistive bias
US6285213B1 (en) 1997-11-19 2001-09-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device
US6118303A (en) * 1998-04-17 2000-09-12 Lsi Logic Corporation Integrated circuit I/O buffer having pass gate protection with RC delay
KR100297139B1 (ko) 1998-04-20 2001-10-29 가네꼬 히사시 반도체 집적회로
EP1061525B1 (en) * 1999-06-17 2006-03-08 STMicroelectronics S.r.l. Row decoder for a nonvolatile memory with possibility of selectively biasing word lines to positive or negative voltages

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