JP2005534803A - 残留ストレス最適化被覆を形成するスパッタ方法及び装置 - Google Patents

残留ストレス最適化被覆を形成するスパッタ方法及び装置 Download PDF

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Publication number
JP2005534803A
JP2005534803A JP2004505408A JP2004505408A JP2005534803A JP 2005534803 A JP2005534803 A JP 2005534803A JP 2004505408 A JP2004505408 A JP 2004505408A JP 2004505408 A JP2004505408 A JP 2004505408A JP 2005534803 A JP2005534803 A JP 2005534803A
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Japan
Prior art keywords
target
positive voltage
coating
voltage
substrate
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JP2004505408A
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Japanese (ja)
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JP2005534803A5 (enExample
Inventor
ウォルター ハーグ，
Original Assignee
ユナクシス バルザース アクチェンゲゼルシャフト
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Publication of JP2005534803A publication Critical patent/JP2005534803A/ja
Publication of JP2005534803A5 publication Critical patent/JP2005534803A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2004505408A 2002-05-22 2003-04-30 残留ストレス最適化被覆を形成するスパッタ方法及び装置 Pending JP2005534803A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10222909A DE10222909A1 (de) 2002-05-22 2002-05-22 Sputterverfahren bzw. Vorrichtung zur Herstellung von eigenspannungsoptimierten Beschichtungen
PCT/EP2003/004572 WO2003097896A1 (de) 2002-05-22 2003-04-30 Sputterverfahren bzw. vorrichtung zur herstellung von eigenspannungsoptimierten beschichtungen

Publications (2)

Publication Number Publication Date
JP2005534803A true JP2005534803A (ja) 2005-11-17
JP2005534803A5 JP2005534803A5 (enExample) 2006-06-22

Family

ID=29414081

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004505408A Pending JP2005534803A (ja) 2002-05-22 2003-04-30 残留ストレス最適化被覆を形成するスパッタ方法及び装置

Country Status (9)

Country Link
US (1) US20070009670A9 (enExample)
EP (1) EP1511877B1 (enExample)
JP (1) JP2005534803A (enExample)
CN (1) CN100577855C (enExample)
AT (1) ATE481511T1 (enExample)
AU (1) AU2003232242A1 (enExample)
DE (2) DE10222909A1 (enExample)
TW (1) TWI275655B (enExample)
WO (1) WO2003097896A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021021120A (ja) * 2019-07-29 2021-02-18 株式会社アルバック スパッタリング方法及びスパッタリング装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060278521A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for controlling ion density and energy using modulated power signals
KR101046520B1 (ko) 2007-09-07 2011-07-04 어플라이드 머티어리얼스, 인코포레이티드 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어
DE102008060838A1 (de) 2008-12-05 2010-06-10 Zounek, Alexis, Dr. Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens
US12297529B1 (en) 2010-05-19 2025-05-13 Corporation For National Research Initiatives Method and system for controlling the state of stress in deposited thin films
DE102010034321B4 (de) * 2010-08-09 2017-04-06 Technische Universität Dresden Verfahren zur Herstellung einer Hartstoffbeschichtung auf metallischen, keramischen oder hartmetallischen Bauteilen sowie eine mit dem Verfahren hergestellte Hartstoffbeschichtung
US8252680B2 (en) * 2010-09-24 2012-08-28 Intel Corporation Methods and architectures for bottomless interconnect vias
US9399812B2 (en) * 2011-10-11 2016-07-26 Applied Materials, Inc. Methods of preventing plasma induced damage during substrate processing
EP2867386A1 (en) 2012-06-29 2015-05-06 Oerlikon Advanced Technologies AG Method of coating by pulsed bipolar sputtering

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06145975A (ja) * 1992-03-20 1994-05-27 Komag Inc 炭素フィルムをスパタリングする方法及びその製造物
JP2711503B2 (ja) * 1993-07-07 1998-02-10 アネルバ株式会社 バイアススパッタによる薄膜形成方法
DE4401986A1 (de) * 1994-01-25 1995-07-27 Dresden Vakuumtech Gmbh Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür
JPH07224379A (ja) * 1994-02-14 1995-08-22 Ulvac Japan Ltd スパッタ方法およびそのスパッタ装置
JPH07243039A (ja) * 1994-03-02 1995-09-19 Chugai Ro Co Ltd 直流マグネトロン型反応性スパッタ法
JP3720061B2 (ja) * 1994-03-24 2005-11-24 株式会社アルバック 薄膜抵抗体の直流スパッタ成膜方法
JP3585519B2 (ja) * 1994-03-25 2004-11-04 株式会社アルバック スパッタ装置及びスパッタ方法
US5651865A (en) * 1994-06-17 1997-07-29 Eni Preferential sputtering of insulators from conductive targets
JP2904263B2 (ja) * 1995-12-04 1999-06-14 日本電気株式会社 スパッタ装置
US5770023A (en) * 1996-02-12 1998-06-23 Eni A Division Of Astec America, Inc. Etch process employing asymmetric bipolar pulsed DC
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
US6086830A (en) * 1997-09-23 2000-07-11 Imperial Petroleum Recovery Corporation Radio frequency microwave energy applicator apparatus to break oil and water emulsion
US6149778A (en) * 1998-03-12 2000-11-21 Lucent Technologies Inc. Article comprising fluorinated amorphous carbon and method for fabricating article
US6620720B1 (en) * 2000-04-10 2003-09-16 Agere Systems Inc Interconnections to copper IC's
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021021120A (ja) * 2019-07-29 2021-02-18 株式会社アルバック スパッタリング方法及びスパッタリング装置

Also Published As

Publication number Publication date
TWI275655B (en) 2007-03-11
US20070009670A9 (en) 2007-01-11
CN1656244A (zh) 2005-08-17
ATE481511T1 (de) 2010-10-15
CN100577855C (zh) 2010-01-06
AU2003232242A1 (en) 2003-12-02
DE10222909A1 (de) 2003-12-04
WO2003097896A1 (de) 2003-11-27
DE50313095D1 (de) 2010-10-28
EP1511877B1 (de) 2010-09-15
US20050233089A1 (en) 2005-10-20
TW200406500A (en) 2004-05-01
EP1511877A1 (de) 2005-03-09

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