CN1656244A - 制备残余应力优化涂层的溅射方法和设备 - Google Patents
制备残余应力优化涂层的溅射方法和设备 Download PDFInfo
- Publication number
- CN1656244A CN1656244A CNA038115883A CN03811588A CN1656244A CN 1656244 A CN1656244 A CN 1656244A CN A038115883 A CNA038115883 A CN A038115883A CN 03811588 A CN03811588 A CN 03811588A CN 1656244 A CN1656244 A CN 1656244A
- Authority
- CN
- China
- Prior art keywords
- pulse
- voltage
- positive voltage
- target
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000000576 coating method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10222909A DE10222909A1 (de) | 2002-05-22 | 2002-05-22 | Sputterverfahren bzw. Vorrichtung zur Herstellung von eigenspannungsoptimierten Beschichtungen |
DE10222909.0 | 2002-05-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1656244A true CN1656244A (zh) | 2005-08-17 |
CN100577855C CN100577855C (zh) | 2010-01-06 |
Family
ID=29414081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03811588A Expired - Fee Related CN100577855C (zh) | 2002-05-22 | 2003-04-30 | 制备残余应力优化涂层的溅射方法和设备 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20070009670A9 (zh) |
EP (1) | EP1511877B1 (zh) |
JP (1) | JP2005534803A (zh) |
CN (1) | CN100577855C (zh) |
AT (1) | ATE481511T1 (zh) |
AU (1) | AU2003232242A1 (zh) |
DE (2) | DE10222909A1 (zh) |
TW (1) | TWI275655B (zh) |
WO (1) | WO2003097896A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060278521A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for controlling ion density and energy using modulated power signals |
KR101046520B1 (ko) | 2007-09-07 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 내부 챔버 상의 부산물 막 증착을 제어하기 위한 pecvd 시스템에서의 소스 가스 흐름 경로 제어 |
DE102008060838A1 (de) | 2008-12-05 | 2010-06-10 | Zounek, Alexis, Dr. | Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens |
DE102010034321B4 (de) * | 2010-08-09 | 2017-04-06 | Technische Universität Dresden | Verfahren zur Herstellung einer Hartstoffbeschichtung auf metallischen, keramischen oder hartmetallischen Bauteilen sowie eine mit dem Verfahren hergestellte Hartstoffbeschichtung |
US8252680B2 (en) * | 2010-09-24 | 2012-08-28 | Intel Corporation | Methods and architectures for bottomless interconnect vias |
US9399812B2 (en) * | 2011-10-11 | 2016-07-26 | Applied Materials, Inc. | Methods of preventing plasma induced damage during substrate processing |
TW201408805A (zh) * | 2012-06-29 | 2014-03-01 | Oc Oerlikon Balzers Ag | 脈衝雙極濺鍍方法、用於製造工件的設備、方法以及工件 |
JP2021021120A (ja) * | 2019-07-29 | 2021-02-18 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06145975A (ja) * | 1992-03-20 | 1994-05-27 | Komag Inc | 炭素フィルムをスパタリングする方法及びその製造物 |
JP2711503B2 (ja) * | 1993-07-07 | 1998-02-10 | アネルバ株式会社 | バイアススパッタによる薄膜形成方法 |
DE4401986A1 (de) * | 1994-01-25 | 1995-07-27 | Dresden Vakuumtech Gmbh | Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür |
JPH07224379A (ja) * | 1994-02-14 | 1995-08-22 | Ulvac Japan Ltd | スパッタ方法およびそのスパッタ装置 |
JPH07243039A (ja) * | 1994-03-02 | 1995-09-19 | Chugai Ro Co Ltd | 直流マグネトロン型反応性スパッタ法 |
JP3720061B2 (ja) * | 1994-03-24 | 2005-11-24 | 株式会社アルバック | 薄膜抵抗体の直流スパッタ成膜方法 |
JP3585519B2 (ja) * | 1994-03-25 | 2004-11-04 | 株式会社アルバック | スパッタ装置及びスパッタ方法 |
US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
JP2904263B2 (ja) * | 1995-12-04 | 1999-06-14 | 日本電気株式会社 | スパッタ装置 |
US5770023A (en) * | 1996-02-12 | 1998-06-23 | Eni A Division Of Astec America, Inc. | Etch process employing asymmetric bipolar pulsed DC |
DE19651811B4 (de) * | 1996-12-13 | 2006-08-31 | Unaxis Deutschland Holding Gmbh | Vorrichtung zum Belegen eines Substrats mit dünnen Schichten |
US6086830A (en) * | 1997-09-23 | 2000-07-11 | Imperial Petroleum Recovery Corporation | Radio frequency microwave energy applicator apparatus to break oil and water emulsion |
US6149778A (en) * | 1998-03-12 | 2000-11-21 | Lucent Technologies Inc. | Article comprising fluorinated amorphous carbon and method for fabricating article |
US6620720B1 (en) * | 2000-04-10 | 2003-09-16 | Agere Systems Inc | Interconnections to copper IC's |
US6506289B2 (en) * | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
-
2002
- 2002-05-22 DE DE10222909A patent/DE10222909A1/de not_active Withdrawn
-
2003
- 2003-04-30 DE DE50313095T patent/DE50313095D1/de not_active Expired - Lifetime
- 2003-04-30 US US10/515,792 patent/US20070009670A9/en not_active Abandoned
- 2003-04-30 JP JP2004505408A patent/JP2005534803A/ja active Pending
- 2003-04-30 AU AU2003232242A patent/AU2003232242A1/en not_active Abandoned
- 2003-04-30 EP EP03752719A patent/EP1511877B1/de not_active Expired - Lifetime
- 2003-04-30 AT AT03752719T patent/ATE481511T1/de active
- 2003-04-30 CN CN03811588A patent/CN100577855C/zh not_active Expired - Fee Related
- 2003-04-30 WO PCT/EP2003/004572 patent/WO2003097896A1/de active Application Filing
- 2003-05-22 TW TW092113899A patent/TWI275655B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2003097896A1 (de) | 2003-11-27 |
JP2005534803A (ja) | 2005-11-17 |
EP1511877B1 (de) | 2010-09-15 |
US20050233089A1 (en) | 2005-10-20 |
CN100577855C (zh) | 2010-01-06 |
US20070009670A9 (en) | 2007-01-11 |
TWI275655B (en) | 2007-03-11 |
ATE481511T1 (de) | 2010-10-15 |
EP1511877A1 (de) | 2005-03-09 |
TW200406500A (en) | 2004-05-01 |
DE10222909A1 (de) | 2003-12-04 |
AU2003232242A1 (en) | 2003-12-02 |
DE50313095D1 (de) | 2010-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100887820B1 (ko) | 변조 전력 신호를 이용한 이온 밀도 및 에너지 제어 시스템및 방법 | |
EP2157205B1 (en) | A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source | |
EP1734558A1 (en) | System for modulating power signals to control sputtering | |
CN103510048B (zh) | 一种多孔结构铜纳米线阵列的制备方法及其薄膜电导率的测试方法 | |
WO2005005684A1 (en) | Work piece processing by pulsed electric discharges in solid-gas plasma | |
EP1018139A1 (en) | Adjustment of deposition uniformity in an inductively coupled plasma source | |
US20140290576A1 (en) | Method and apparatus for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground | |
US5078847A (en) | Ion plating method and apparatus | |
CN103114276B (zh) | 一种快速沉积类金刚石薄膜的装置 | |
CN100577855C (zh) | 制备残余应力优化涂层的溅射方法和设备 | |
JP2010065240A (ja) | スパッタ装置 | |
CN102634765A (zh) | 一种镀银铝材料表面制备非晶碳涂层的方法 | |
JP4240471B2 (ja) | 透明導電膜の成膜方法 | |
JP2003512526A (ja) | 複数の電極のスパッタリングシステムにおいて基板にバイアスをかける方法および装置 | |
CN109306457A (zh) | 高频溅射装置及高频溅射方法 | |
US20160215386A1 (en) | Modulation of reverse voltage limited waveforms in sputtering deposition chambers | |
RU2316613C1 (ru) | Способ получения пленок оксида цинка | |
US20160118233A1 (en) | Waveform for improved energy control of sputtered species | |
RU2499079C2 (ru) | Способ получения прозрачного проводящего покрытия из оксида металла путем импульсного высокоионизирующего магнетронного распыления | |
KR102626873B1 (ko) | HiPIMS를 이용한 전극 증착 방법 | |
EP2422352B1 (en) | Rf-plasma glow discharge sputtering | |
KR20010029980A (ko) | 배향된 압전 박막의 제조방법 | |
CN1386896A (zh) | 射频—直流多层辉光离子渗镀设备及工艺 | |
KR20140041651A (ko) | 다단계 펄스를 이용한 박막 형성장치 및 박막 형성방법 | |
CN117778977A (zh) | 高功率脉冲磁控溅射与调制脉冲磁控溅射复合共沉积方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: OC RUSSIAN KENBARZAV SHARES CO., LTD. Free format text: FORMER OWNER: UNAXIS BALZERS AG Effective date: 20070323 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070323 Address after: Liechtenstein Balza J Applicant after: Unaxis Balzers AG Address before: Liechtenstein Balza J Applicant before: Unaxis Balzers AG |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OERLIKON ADVANCED TECHNOLOGIES AG Free format text: FORMER OWNER: OC OERLIKON BALZERS AG Effective date: 20140718 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20140718 Address after: Liechtenstein Barr Che J Patentee after: OC OERLIKON BALZERS AG Address before: Liechtenstein Balza J Patentee before: Unaxis Balzers AG |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Liechtenstein Barr Che J Patentee after: AIFA advanced technology Co.,Ltd. Address before: Liechtenstein Barr Che J Patentee before: OC OERLIKON BALZERS AG |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200303 Address after: Swiss Te Lui Bach Patentee after: EVATEC AG Address before: Liechtenstein Barr Che J Patentee before: AIFA advanced technology Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100106 |
|
CF01 | Termination of patent right due to non-payment of annual fee |