TWI275655B - Sputter process and apparatus for the production of coatings with optimized internal stresses - Google Patents
Sputter process and apparatus for the production of coatings with optimized internal stresses Download PDFInfo
- Publication number
- TWI275655B TWI275655B TW092113899A TW92113899A TWI275655B TW I275655 B TWI275655 B TW I275655B TW 092113899 A TW092113899 A TW 092113899A TW 92113899 A TW92113899 A TW 92113899A TW I275655 B TWI275655 B TW I275655B
- Authority
- TW
- Taiwan
- Prior art keywords
- pulse
- positive voltage
- signal
- target
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000000576 coating method Methods 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 230000002411 adverse Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 206010019468 Hemiplegia Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- -1 argon ion Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10222909A DE10222909A1 (de) | 2002-05-22 | 2002-05-22 | Sputterverfahren bzw. Vorrichtung zur Herstellung von eigenspannungsoptimierten Beschichtungen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200406500A TW200406500A (en) | 2004-05-01 |
| TWI275655B true TWI275655B (en) | 2007-03-11 |
Family
ID=29414081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092113899A TWI275655B (en) | 2002-05-22 | 2003-05-22 | Sputter process and apparatus for the production of coatings with optimized internal stresses |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20070009670A9 (enExample) |
| EP (1) | EP1511877B1 (enExample) |
| JP (1) | JP2005534803A (enExample) |
| CN (1) | CN100577855C (enExample) |
| AT (1) | ATE481511T1 (enExample) |
| AU (1) | AU2003232242A1 (enExample) |
| DE (2) | DE10222909A1 (enExample) |
| TW (1) | TWI275655B (enExample) |
| WO (1) | WO2003097896A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060278521A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for controlling ion density and energy using modulated power signals |
| KR101046520B1 (ko) | 2007-09-07 | 2011-07-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 내부 챔버 상의 부산물 막 증착을 제어하기 위한 ｐｅｃｖｄ 시스템에서의 소스 가스 흐름 경로 제어 |
| DE102008060838A1 (de) | 2008-12-05 | 2010-06-10 | Zounek, Alexis, Dr. | Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens |
| US12297529B1 (en) | 2010-05-19 | 2025-05-13 | Corporation For National Research Initiatives | Method and system for controlling the state of stress in deposited thin films |
| DE102010034321B4 (de) * | 2010-08-09 | 2017-04-06 | Technische Universität Dresden | Verfahren zur Herstellung einer Hartstoffbeschichtung auf metallischen, keramischen oder hartmetallischen Bauteilen sowie eine mit dem Verfahren hergestellte Hartstoffbeschichtung |
| US8252680B2 (en) * | 2010-09-24 | 2012-08-28 | Intel Corporation | Methods and architectures for bottomless interconnect vias |
| US9399812B2 (en) * | 2011-10-11 | 2016-07-26 | Applied Materials, Inc. | Methods of preventing plasma induced damage during substrate processing |
| EP2867386A1 (en) | 2012-06-29 | 2015-05-06 | Oerlikon Advanced Technologies AG | Method of coating by pulsed bipolar sputtering |
| JP2021021120A (ja) * | 2019-07-29 | 2021-02-18 | 株式会社アルバック | スパッタリング方法及びスパッタリング装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06145975A (ja) * | 1992-03-20 | 1994-05-27 | Komag Inc | 炭素フィルムをスパタリングする方法及びその製造物 |
| JP2711503B2 (ja) * | 1993-07-07 | 1998-02-10 | アネルバ株式会社 | バイアススパッタによる薄膜形成方法 |
| DE4401986A1 (de) * | 1994-01-25 | 1995-07-27 | Dresden Vakuumtech Gmbh | Verfahren zum Betreiben eines Vakuumlichtbogenverdampfers und Stromversorgungseinrichtung dafür |
| JPH07224379A (ja) * | 1994-02-14 | 1995-08-22 | Ulvac Japan Ltd | スパッタ方法およびそのスパッタ装置 |
| JPH07243039A (ja) * | 1994-03-02 | 1995-09-19 | Chugai Ro Co Ltd | 直流マグネトロン型反応性スパッタ法 |
| JP3720061B2 (ja) * | 1994-03-24 | 2005-11-24 | 株式会社アルバック | 薄膜抵抗体の直流スパッタ成膜方法 |
| JP3585519B2 (ja) * | 1994-03-25 | 2004-11-04 | 株式会社アルバック | スパッタ装置及びスパッタ方法 |
| US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
| JP2904263B2 (ja) * | 1995-12-04 | 1999-06-14 | 日本電気株式会社 | スパッタ装置 |
| US5770023A (en) * | 1996-02-12 | 1998-06-23 | Eni A Division Of Astec America, Inc. | Etch process employing asymmetric bipolar pulsed DC |
| DE19651811B4 (de) * | 1996-12-13 | 2006-08-31 | Unaxis Deutschland Holding Gmbh | Vorrichtung zum Belegen eines Substrats mit dünnen Schichten |
| US6086830A (en) * | 1997-09-23 | 2000-07-11 | Imperial Petroleum Recovery Corporation | Radio frequency microwave energy applicator apparatus to break oil and water emulsion |
| US6149778A (en) * | 1998-03-12 | 2000-11-21 | Lucent Technologies Inc. | Article comprising fluorinated amorphous carbon and method for fabricating article |
| US6620720B1 (en) * | 2000-04-10 | 2003-09-16 | Agere Systems Inc | Interconnections to copper IC's |
| US6506289B2 (en) * | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
-
2002
- 2002-05-22 DE DE10222909A patent/DE10222909A1/de not_active Withdrawn
-
2003
- 2003-04-30 EP EP03752719A patent/EP1511877B1/de not_active Expired - Lifetime
- 2003-04-30 DE DE50313095T patent/DE50313095D1/de not_active Expired - Lifetime
- 2003-04-30 AU AU2003232242A patent/AU2003232242A1/en not_active Abandoned
- 2003-04-30 AT AT03752719T patent/ATE481511T1/de active
- 2003-04-30 US US10/515,792 patent/US20070009670A9/en not_active Abandoned
- 2003-04-30 CN CN03811588A patent/CN100577855C/zh not_active Expired - Fee Related
- 2003-04-30 JP JP2004505408A patent/JP2005534803A/ja active Pending
- 2003-04-30 WO PCT/EP2003/004572 patent/WO2003097896A1/de not_active Ceased
- 2003-05-22 TW TW092113899A patent/TWI275655B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005534803A (ja) | 2005-11-17 |
| US20070009670A9 (en) | 2007-01-11 |
| CN1656244A (zh) | 2005-08-17 |
| ATE481511T1 (de) | 2010-10-15 |
| CN100577855C (zh) | 2010-01-06 |
| AU2003232242A1 (en) | 2003-12-02 |
| DE10222909A1 (de) | 2003-12-04 |
| WO2003097896A1 (de) | 2003-11-27 |
| DE50313095D1 (de) | 2010-10-28 |
| EP1511877B1 (de) | 2010-09-15 |
| US20050233089A1 (en) | 2005-10-20 |
| TW200406500A (en) | 2004-05-01 |
| EP1511877A1 (de) | 2005-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |