JP2005528235A - 集積回路構成部分に接続されるダイ - Google Patents
集積回路構成部分に接続されるダイ Download PDFInfo
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- JP2005528235A JP2005528235A JP2004510031A JP2004510031A JP2005528235A JP 2005528235 A JP2005528235 A JP 2005528235A JP 2004510031 A JP2004510031 A JP 2004510031A JP 2004510031 A JP2004510031 A JP 2004510031A JP 2005528235 A JP2005528235 A JP 2005528235A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0054—Packages or encapsulation for reducing stress inside of the package structure between other parts not provided for in B81B7/0048 - B81B7/0051
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
- B81C2203/0792—Forming interconnections between the electronic processing unit and the micromechanical structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1433—Application-specific integrated circuit [ASIC]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Wire Bonding (AREA)
Abstract
Description
他の例において、演算電子回路がダイと組み合わせて使用される。演算電子回路とダイの双方とも、基板や回路板などへの電気的接続をもたらさなければならない。2つの独立する接続空間は基板上や回路板上などで使用されなければならない。
他の例において、演算電子回路およびダイは一緒に試験を受けなければならない。演算電子回路およびダイを一緒に試験するために、それらは基板や回路板などに搭載されなければならない。
本発明の例示的実施の特徴は、説明、特許請求の範囲、および、添付の図面から明らかになる。
図6(図1の断面6−6)を参照すると、1つの例において、応従性構成部分116は、ダイ102のカバー160上のエッチングされた井戸610に位置する。井戸610は応従性構成部分116の屈曲を可能にするために十分大きなサイズおよび形状である。他の例において、応従性構成部分116はダイ102のカバー160の表面180上にある。
電気構成部分1220をダイ102内に集積させることは、独立層310に完全に搭載せずに、電気構成部分1220およびダイ102を一緒に試験することを考慮する。
Claims (2)
- 少なくとも第1および第2の部分を備えるダイであって、前記ダイの前記第1の部分は機械的かつ電気的に回路板に接続可能であるダイ、および
前記ダイの前記第2の部分に機械的かつ電気的に接続される集積回路構成部分を含み、
前記ダイは、動作の際、前記集積回路構成部分に通過される1つまたは複数の電気信号を発生させるために機能する装置。 - 前記1つまたは複数の電気信号は1つまたは複数の第1の電気信号を含み、
動作の際、前記集積回路構成部分は、前記回路板への出力のために前記ダイに通過される前記1つまたは複数の第1の電気信号に基づき、1つまたは複数の第2の電気信号を発生するために機能する請求項1に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/159,777 US6992399B2 (en) | 2002-05-24 | 2002-05-31 | Die connected with integrated circuit component for electrical signal passing therebetween |
PCT/US2003/016136 WO2003103048A1 (en) | 2002-05-31 | 2003-05-21 | Die connected with integrated circuit component |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005528235A true JP2005528235A (ja) | 2005-09-22 |
JP4634141B2 JP4634141B2 (ja) | 2011-02-16 |
Family
ID=29583019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004510031A Expired - Fee Related JP4634141B2 (ja) | 2002-05-31 | 2003-05-21 | 集積回路構成部分に接続されるダイ |
Country Status (8)
Country | Link |
---|---|
US (1) | US6992399B2 (ja) |
EP (1) | EP1512176B1 (ja) |
JP (1) | JP4634141B2 (ja) |
KR (1) | KR100913275B1 (ja) |
AU (1) | AU2003243292A1 (ja) |
CA (1) | CA2483272A1 (ja) |
DE (1) | DE60333289D1 (ja) |
WO (1) | WO2003103048A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009516598A (ja) * | 2005-11-23 | 2009-04-23 | ヴィーテイアイ テクノロジーズ オーワイ | 微小電気機械部品を作製する方法および微小電気機械部品 |
JP2012169461A (ja) * | 2011-02-15 | 2012-09-06 | Toyota Motor Corp | 半導体装置 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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US7812703B2 (en) * | 2006-03-23 | 2010-10-12 | Innovative Micro Technology | MEMS device using NiMn alloy and method of manufacture |
US7687304B2 (en) * | 2006-11-29 | 2010-03-30 | Innovative Micro Technology | Current-driven device using NiMn alloy and method of manufacture |
US7605477B2 (en) * | 2007-01-25 | 2009-10-20 | Raytheon Company | Stacked integrated circuit assembly |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
DE112011103124T5 (de) | 2010-09-18 | 2013-12-19 | Fairchild Semiconductor Corporation | Biegelager zum Verringern von Quadratur für mitschwingende mikromechanische Vorrichtungen |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
EP2616772B1 (en) | 2010-09-18 | 2016-06-22 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
US9856132B2 (en) | 2010-09-18 | 2018-01-02 | Fairchild Semiconductor Corporation | Sealed packaging for microelectromechanical systems |
KR101332701B1 (ko) | 2010-09-20 | 2013-11-25 | 페어차일드 세미컨덕터 코포레이션 | 기준 커패시터를 포함하는 미소 전자기계 압력 센서 |
KR101311966B1 (ko) | 2010-09-20 | 2013-10-14 | 페어차일드 세미컨덕터 코포레이션 | 감소된 션트 커패시턴스를 갖는 관통 실리콘 비아 |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
KR102058489B1 (ko) | 2012-04-05 | 2019-12-23 | 페어차일드 세미컨덕터 코포레이션 | 멤스 장치 프론트 엔드 전하 증폭기 |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
KR101999745B1 (ko) | 2012-04-12 | 2019-10-01 | 페어차일드 세미컨덕터 코포레이션 | 미세 전자 기계 시스템 구동기 |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
DE102014210006A1 (de) * | 2014-02-18 | 2015-08-20 | Robert Bosch Gmbh | Sensoreinheit und Verfahren zur Herstellung einer Sensoreinheit |
US9899236B2 (en) | 2014-12-24 | 2018-02-20 | Stmicroelectronics, Inc. | Semiconductor package with cantilever pads |
US9768126B2 (en) * | 2014-12-24 | 2017-09-19 | Stmicroelectronics, Inc. | Stacked semiconductor packages with cantilever pads |
CN106206516B (zh) * | 2015-05-26 | 2019-08-06 | 意法半导体公司 | 带有悬臂式焊盘的叠层半导体封装体 |
IT201600121003A1 (it) * | 2016-11-29 | 2018-05-29 | St Microelectronics Srl | Dispositivo integrato a semiconduttore con contatti elettrici tra piastrine impilate e relativo procedimento di realizzazione |
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JPH01155633A (ja) * | 1987-12-14 | 1989-06-19 | Hitachi Ltd | 半導体装置 |
JPH0613426A (ja) * | 1990-06-25 | 1994-01-21 | Motorola Inc | センサ部を有するハイブリッド半導体装置の組立体 |
JPH06504408A (ja) * | 1990-09-24 | 1994-05-19 | テッセラ・インコーポレーテッド | 半導体チップアセンブリ、半導体チップアセンブリの製造方法及び半導体チップアセンブリの部品 |
JPH0927521A (ja) * | 1995-07-07 | 1997-01-28 | Hewlett Packard Co <Hp> | 回路部材の電気接続構造 |
JPH10229147A (ja) * | 1997-01-02 | 1998-08-25 | Texas Instr Inc <Ti> | 集積回路チップ・パッケージ用カンチレバー・ボール接続 |
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JP2002076269A (ja) * | 2000-04-28 | 2002-03-15 | Stmicroelectronics Srl | 半導体材料の第2の本体が重ねて置かれた半導体材料の第1の本体を電気的に接続するための構造、電気的接続構造を使用する複合構造、および、それらの製造方法 |
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2002
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-
2003
- 2003-05-21 WO PCT/US2003/016136 patent/WO2003103048A1/en not_active Application Discontinuation
- 2003-05-21 JP JP2004510031A patent/JP4634141B2/ja not_active Expired - Fee Related
- 2003-05-21 DE DE60333289T patent/DE60333289D1/de not_active Expired - Lifetime
- 2003-05-21 EP EP03756194A patent/EP1512176B1/en not_active Expired - Lifetime
- 2003-05-21 KR KR20047017492A patent/KR100913275B1/ko not_active IP Right Cessation
- 2003-05-21 AU AU2003243292A patent/AU2003243292A1/en not_active Abandoned
- 2003-05-21 CA CA 2483272 patent/CA2483272A1/en not_active Abandoned
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JPH01155633A (ja) * | 1987-12-14 | 1989-06-19 | Hitachi Ltd | 半導体装置 |
JPH0613426A (ja) * | 1990-06-25 | 1994-01-21 | Motorola Inc | センサ部を有するハイブリッド半導体装置の組立体 |
JPH06504408A (ja) * | 1990-09-24 | 1994-05-19 | テッセラ・インコーポレーテッド | 半導体チップアセンブリ、半導体チップアセンブリの製造方法及び半導体チップアセンブリの部品 |
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JPH10229147A (ja) * | 1997-01-02 | 1998-08-25 | Texas Instr Inc <Ti> | 集積回路チップ・パッケージ用カンチレバー・ボール接続 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009516598A (ja) * | 2005-11-23 | 2009-04-23 | ヴィーテイアイ テクノロジーズ オーワイ | 微小電気機械部品を作製する方法および微小電気機械部品 |
US8124435B2 (en) | 2005-11-23 | 2012-02-28 | Vti Technologies Oy | Method for manufacturing a microelectromechanical component, and a microelectromechanical component |
US8450816B2 (en) | 2005-11-23 | 2013-05-28 | Murata Electronics Oy | Method for manufacturing a microelectromechanical component; and a microelectromechanical component |
JP2012169461A (ja) * | 2011-02-15 | 2012-09-06 | Toyota Motor Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1512176A1 (en) | 2005-03-09 |
KR20050009701A (ko) | 2005-01-25 |
AU2003243292A1 (en) | 2003-12-19 |
JP4634141B2 (ja) | 2011-02-16 |
DE60333289D1 (de) | 2010-08-19 |
US6992399B2 (en) | 2006-01-31 |
WO2003103048A1 (en) | 2003-12-11 |
KR100913275B1 (ko) | 2009-08-21 |
CA2483272A1 (en) | 2003-12-11 |
EP1512176B1 (en) | 2010-07-07 |
US20030222337A1 (en) | 2003-12-04 |
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