JP2005527003A5 - - Google Patents
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- Publication number
- JP2005527003A5 JP2005527003A5 JP2004515696A JP2004515696A JP2005527003A5 JP 2005527003 A5 JP2005527003 A5 JP 2005527003A5 JP 2004515696 A JP2004515696 A JP 2004515696A JP 2004515696 A JP2004515696 A JP 2004515696A JP 2005527003 A5 JP2005527003 A5 JP 2005527003A5
- Authority
- JP
- Japan
- Prior art keywords
- anthracene
- sensitizer
- duv photoresist
- derivatives
- chromophore
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 12
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims 8
- 229920002120 photoresistant polymer Polymers 0.000 claims 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims 6
- 230000003321 amplification Effects 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 229910001507 metal halide Inorganic materials 0.000 claims 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims 3
- -1 salt metal halide Chemical class 0.000 claims 3
- 230000000694 effects Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- YCTBFSAWJWMRGO-UHFFFAOYSA-N 1,4-dimethoxyanthracene Chemical compound C1=CC=C2C=C3C(OC)=CC=C(OC)C3=CC2=C1 YCTBFSAWJWMRGO-UHFFFAOYSA-N 0.000 claims 1
- JTGMTYWYUZDRBK-UHFFFAOYSA-N 9,10-dimethylanthracene Chemical compound C1=CC=C2C(C)=C(C=CC=C3)C3=C(C)C2=C1 JTGMTYWYUZDRBK-UHFFFAOYSA-N 0.000 claims 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims 1
- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 claims 1
- 125000005410 aryl sulfonium group Chemical group 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/155,523 US7067227B2 (en) | 2002-05-23 | 2002-05-23 | Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing |
| PCT/US2003/016058 WO2004001797A2 (en) | 2002-05-23 | 2003-05-23 | Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009249149A Division JP4996667B2 (ja) | 2002-05-23 | 2009-10-29 | フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005527003A JP2005527003A (ja) | 2005-09-08 |
| JP2005527003A5 true JP2005527003A5 (https=) | 2009-07-23 |
| JP4427447B2 JP4427447B2 (ja) | 2010-03-10 |
Family
ID=29549089
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004515696A Expired - Fee Related JP4427447B2 (ja) | 2002-05-23 | 2003-05-23 | フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト |
| JP2009249149A Expired - Fee Related JP4996667B2 (ja) | 2002-05-23 | 2009-10-29 | フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009249149A Expired - Fee Related JP4996667B2 (ja) | 2002-05-23 | 2009-10-29 | フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7067227B2 (https=) |
| EP (1) | EP1506454A2 (https=) |
| JP (2) | JP4427447B2 (https=) |
| KR (1) | KR20050010821A (https=) |
| WO (1) | WO2004001797A2 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050229145A1 (en) * | 2004-03-29 | 2005-10-13 | Irby John H Iv | Method and system for chrome cut-out regions on a reticle |
| US20050271711A1 (en) | 2004-04-26 | 2005-12-08 | The Procter & Gamble Company | Therapeutic antimicrobial compositions and methods |
| JP2006145853A (ja) * | 2004-11-19 | 2006-06-08 | Jsr Corp | 感放射線性樹脂組成物およびメッキ造形物の製造方法 |
| JP4828201B2 (ja) * | 2005-10-19 | 2011-11-30 | 東京応化工業株式会社 | 化学増幅型ホトレジスト組成物、レジスト層積層体およびレジストパタ−ン形成方法 |
| US7754394B2 (en) * | 2006-11-14 | 2010-07-13 | International Business Machines Corporation | Method to etch chrome for photomask fabrication |
| WO2008070188A1 (en) * | 2006-12-08 | 2008-06-12 | Applied Materials, Inc. | Methods and apparatus for multi-exposure patterning |
| US20080192253A1 (en) * | 2007-02-08 | 2008-08-14 | Susie Xiuru Yang | Method and test-structure for determining an offset between lithographic masks |
| US8292402B2 (en) * | 2008-02-13 | 2012-10-23 | Lexmark International, Inc. | Photoimageable dry film formulation |
| US20140356789A1 (en) * | 2013-05-31 | 2014-12-04 | Orthogonal, Inc. | Fluorinated photopolymer with integrated anthracene sensitizer |
| US9500948B2 (en) * | 2013-05-31 | 2016-11-22 | Orthogonal, Inc. | Fluorinated photoresist with integrated sensitizer |
| CN106103585B (zh) | 2013-11-13 | 2018-09-21 | 正交公司 | 支化的氟化光聚合物 |
| JP6344640B2 (ja) * | 2013-11-27 | 2018-06-20 | 川崎化成工業株式会社 | ラジカル重合増感剤 |
| US9958778B2 (en) | 2014-02-07 | 2018-05-01 | Orthogonal, Inc. | Cross-linkable fluorinated photopolymer |
| JP6537261B2 (ja) * | 2014-12-09 | 2019-07-03 | 旭有機材株式会社 | 樹脂原料、フェノール樹脂及びアントラセン誘導体の製造方法 |
| CN107251190B (zh) | 2014-12-24 | 2020-11-10 | 正交公司 | 电子装置的光刻图案化 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278010A (en) | 1989-03-03 | 1994-01-11 | International Business Machines Corporation | Composition for photo imaging |
| US5023164A (en) | 1989-10-23 | 1991-06-11 | International Business Machines Corporation | Highly sensitive dry developable deep UV photoresist |
| US5055439A (en) | 1989-12-27 | 1991-10-08 | International Business Machines Corporation | Photoacid generating composition and sensitizer therefor |
| KR930008139B1 (en) * | 1990-08-30 | 1993-08-26 | Samsung Electronics Co Ltd | Method for preparation of pattern |
| US5322765A (en) | 1991-11-22 | 1994-06-21 | International Business Machines Corporation | Dry developable photoresist compositions and method for use thereof |
| WO1994024610A1 (en) * | 1993-04-13 | 1994-10-27 | Astarix, Inc. | High resolution mask programmable via selected by low resolution photomasking |
| JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
| KR960015081A (ko) * | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
| JP3203995B2 (ja) * | 1993-12-24 | 2001-09-04 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| DE69511141T2 (de) | 1994-03-28 | 2000-04-20 | Matsushita Electric Industrial Co., Ltd. | Resistzusammensetzung für tiefe Ultraviolettbelichtung |
| JP3317576B2 (ja) * | 1994-05-12 | 2002-08-26 | 富士写真フイルム株式会社 | ポジ型感光性樹脂組成物 |
| JP3579946B2 (ja) | 1995-02-13 | 2004-10-20 | Ｊｓｒ株式会社 | 化学増幅型感放射線性樹脂組成物 |
| US5609989A (en) * | 1995-06-06 | 1997-03-11 | International Business Machines, Corporation | Acid scavengers for use in chemically amplified photoresists |
| JP3433017B2 (ja) * | 1995-08-31 | 2003-08-04 | 株式会社東芝 | 感光性組成物 |
| DE69628996T2 (de) | 1995-12-21 | 2004-04-22 | Wako Pure Chemical Industries, Ltd. | Polymerzusammensetzung und Rezistmaterial |
| JP3589365B2 (ja) * | 1996-02-02 | 2004-11-17 | 富士写真フイルム株式会社 | ポジ画像形成組成物 |
| JP3605939B2 (ja) * | 1996-05-13 | 2004-12-22 | 東洋インキ製造株式会社 | 感エネルギー線ポジ型感応性組成物 |
| JP3693199B2 (ja) * | 1996-07-10 | 2005-09-07 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| JP3808140B2 (ja) * | 1996-09-10 | 2006-08-09 | Ａｚエレクトロニックマテリアルズ株式会社 | 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料 |
| US5955222A (en) * | 1996-12-03 | 1999-09-21 | International Business Machines Corporation | Method of making a rim-type phase-shift mask and mask manufactured thereby |
| US5976770A (en) | 1998-01-15 | 1999-11-02 | Shipley Company, L.L.C. | Dyed photoresists and methods and articles of manufacture comprising same |
| US6103447A (en) * | 1998-02-25 | 2000-08-15 | International Business Machines Corp. | Approach to formulating irradiation sensitive positive resists |
| US6303263B1 (en) * | 1998-02-25 | 2001-10-16 | International Business Machines Machines | Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups |
| JP2000035665A (ja) * | 1998-05-11 | 2000-02-02 | Kunihiro Ichimura | 酸増殖剤及び感光性組成物 |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| US6210856B1 (en) * | 1999-01-27 | 2001-04-03 | International Business Machines Corporation | Resist composition and process of forming a patterned resist layer on a substrate |
| US6251564B1 (en) * | 1999-05-17 | 2001-06-26 | United Microelectronics Corp. | Method for forming a pattern with both logic-type and memory-type circuit |
-
2002
- 2002-05-23 US US10/155,523 patent/US7067227B2/en not_active Expired - Fee Related
-
2003
- 2003-05-23 KR KR10-2004-7018660A patent/KR20050010821A/ko not_active Ceased
- 2003-05-23 EP EP03748908A patent/EP1506454A2/en not_active Withdrawn
- 2003-05-23 WO PCT/US2003/016058 patent/WO2004001797A2/en not_active Ceased
- 2003-05-23 JP JP2004515696A patent/JP4427447B2/ja not_active Expired - Fee Related
-
2009
- 2009-10-29 JP JP2009249149A patent/JP4996667B2/ja not_active Expired - Fee Related
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