JP4427447B2 - フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト - Google Patents

フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト Download PDF

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Publication number
JP4427447B2
JP4427447B2 JP2004515696A JP2004515696A JP4427447B2 JP 4427447 B2 JP4427447 B2 JP 4427447B2 JP 2004515696 A JP2004515696 A JP 2004515696A JP 2004515696 A JP2004515696 A JP 2004515696A JP 4427447 B2 JP4427447 B2 JP 4427447B2
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Japan
Prior art keywords
photoresist
pattern
reticle
processing
layer
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Expired - Fee Related
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JP2004515696A
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Japanese (ja)
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JP2005527003A (ja
JP2005527003A5 (https=
Inventor
メルヴィン， ダブリュー． モントゴメリー，
クリストファー ハマカー，
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Applied Materials Inc
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Applied Materials Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2004515696A 2002-05-23 2003-05-23 フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト Expired - Fee Related JP4427447B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/155,523 US7067227B2 (en) 2002-05-23 2002-05-23 Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing
PCT/US2003/016058 WO2004001797A2 (en) 2002-05-23 2003-05-23 Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009249149A Division JP4996667B2 (ja) 2002-05-23 2009-10-29 フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト

Publications (3)

Publication Number Publication Date
JP2005527003A JP2005527003A (ja) 2005-09-08
JP2005527003A5 JP2005527003A5 (https=) 2009-07-23
JP4427447B2 true JP4427447B2 (ja) 2010-03-10

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Family Applications (2)

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JP2004515696A Expired - Fee Related JP4427447B2 (ja) 2002-05-23 2003-05-23 フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト
JP2009249149A Expired - Fee Related JP4996667B2 (ja) 2002-05-23 2009-10-29 フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト

Family Applications After (1)

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JP2009249149A Expired - Fee Related JP4996667B2 (ja) 2002-05-23 2009-10-29 フォトマスク加工及び半導体処理において使用する増感され化学的に増幅されたフォトレジスト

Country Status (5)

Country Link
US (1) US7067227B2 (https=)
EP (1) EP1506454A2 (https=)
JP (2) JP4427447B2 (https=)
KR (1) KR20050010821A (https=)
WO (1) WO2004001797A2 (https=)

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US20050229145A1 (en) * 2004-03-29 2005-10-13 Irby John H Iv Method and system for chrome cut-out regions on a reticle
US20050271711A1 (en) 2004-04-26 2005-12-08 The Procter & Gamble Company Therapeutic antimicrobial compositions and methods
JP2006145853A (ja) * 2004-11-19 2006-06-08 Jsr Corp 感放射線性樹脂組成物およびメッキ造形物の製造方法
JP4828201B2 (ja) * 2005-10-19 2011-11-30 東京応化工業株式会社 化学増幅型ホトレジスト組成物、レジスト層積層体およびレジストパタ−ン形成方法
US7754394B2 (en) * 2006-11-14 2010-07-13 International Business Machines Corporation Method to etch chrome for photomask fabrication
WO2008070188A1 (en) * 2006-12-08 2008-06-12 Applied Materials, Inc. Methods and apparatus for multi-exposure patterning
US20080192253A1 (en) * 2007-02-08 2008-08-14 Susie Xiuru Yang Method and test-structure for determining an offset between lithographic masks
US8292402B2 (en) * 2008-02-13 2012-10-23 Lexmark International, Inc. Photoimageable dry film formulation
US20140356789A1 (en) * 2013-05-31 2014-12-04 Orthogonal, Inc. Fluorinated photopolymer with integrated anthracene sensitizer
US9500948B2 (en) * 2013-05-31 2016-11-22 Orthogonal, Inc. Fluorinated photoresist with integrated sensitizer
WO2015073534A1 (en) 2013-11-13 2015-05-21 Orthogonal, Inc. Branched fluorinated photopolymers
JP6344640B2 (ja) * 2013-11-27 2018-06-20 川崎化成工業株式会社 ラジカル重合増感剤
WO2015120025A1 (en) 2014-02-07 2015-08-13 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
JP6537261B2 (ja) * 2014-12-09 2019-07-03 旭有機材株式会社 樹脂原料、フェノール樹脂及びアントラセン誘導体の製造方法
CN107251190B (zh) 2014-12-24 2020-11-10 正交公司 电子装置的光刻图案化

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KR930008139B1 (en) * 1990-08-30 1993-08-26 Samsung Electronics Co Ltd Method for preparation of pattern
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WO1994024610A1 (en) * 1993-04-13 1994-10-27 Astarix, Inc. High resolution mask programmable via selected by low resolution photomasking
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JP3579946B2 (ja) 1995-02-13 2004-10-20 Ｊｓｒ株式会社 化学増幅型感放射線性樹脂組成物
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Also Published As

Publication number Publication date
JP2005527003A (ja) 2005-09-08
JP4996667B2 (ja) 2012-08-08
KR20050010821A (ko) 2005-01-28
WO2004001797A2 (en) 2003-12-31
WO2004001797A9 (en) 2004-02-12
WO2004001797A3 (en) 2004-07-01
EP1506454A2 (en) 2005-02-16
JP2010092058A (ja) 2010-04-22
US20030219675A1 (en) 2003-11-27
US7067227B2 (en) 2006-06-27

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