KR20050010821A - 포토 마스크 제조 및 반도체 공정에서 사용하기 위한감광성의 화학적 증폭형 포토레지스트 - Google Patents
포토 마스크 제조 및 반도체 공정에서 사용하기 위한감광성의 화학적 증폭형 포토레지스트 Download PDFInfo
- Publication number
- KR20050010821A KR20050010821A KR10-2004-7018660A KR20047018660A KR20050010821A KR 20050010821 A KR20050010821 A KR 20050010821A KR 20047018660 A KR20047018660 A KR 20047018660A KR 20050010821 A KR20050010821 A KR 20050010821A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- anthracene
- photosensitizer
- line
- naphthalene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 142
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000012545 processing Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000003504 photosensitizing agent Substances 0.000 claims abstract description 29
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 33
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 32
- 238000003384 imaging method Methods 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- 230000005855 radiation Effects 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 12
- 229920003986 novolac Polymers 0.000 claims description 11
- -1 salt metal halide Chemical class 0.000 claims description 11
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 9
- 229910001507 metal halide Inorganic materials 0.000 claims description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 238000005266 casting Methods 0.000 claims description 6
- YCTBFSAWJWMRGO-UHFFFAOYSA-N 1,4-dimethoxyanthracene Chemical compound C1=CC=C2C=C3C(OC)=CC=C(OC)C3=CC2=C1 YCTBFSAWJWMRGO-UHFFFAOYSA-N 0.000 claims description 5
- JTGMTYWYUZDRBK-UHFFFAOYSA-N 9,10-dimethylanthracene Chemical compound C1=CC=C2C(C)=C(C=CC=C3)C3=C(C)C2=C1 JTGMTYWYUZDRBK-UHFFFAOYSA-N 0.000 claims description 5
- VBLOXCRHIQRJKK-UHFFFAOYSA-N 9-(phenoxymethyl)anthracene Chemical compound C=12C=CC=CC2=CC2=CC=CC=C2C=1COC1=CC=CC=C1 VBLOXCRHIQRJKK-UHFFFAOYSA-N 0.000 claims description 5
- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 claims description 5
- 125000005577 anthracene group Chemical group 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims 1
- DALYXJVFSIYXMA-UHFFFAOYSA-N hydrogen sulfide dimer Chemical compound S.S DALYXJVFSIYXMA-UHFFFAOYSA-N 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 9
- 238000011068 loading method Methods 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 35
- 229910052804 chromium Inorganic materials 0.000 description 30
- 239000011651 chromium Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 23
- 239000006117 anti-reflective coating Substances 0.000 description 13
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000007943 implant Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical class [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229920005601 base polymer Polymers 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- WVWBIKZXCXPPIR-UHFFFAOYSA-M N.[O-2].[OH-].O.[Cr+3] Chemical compound N.[O-2].[OH-].O.[Cr+3] WVWBIKZXCXPPIR-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- JXLSUAKVROGMLJ-UHFFFAOYSA-N [He].[O].[Cl] Chemical compound [He].[O].[Cl] JXLSUAKVROGMLJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- XCCCHWWMLSAIOH-UHFFFAOYSA-N anthracen-1-ylmethanol Chemical compound C1=CC=C2C=C3C(CO)=CC=CC3=CC2=C1 XCCCHWWMLSAIOH-UHFFFAOYSA-N 0.000 description 1
- 125000005410 aryl sulfonium group Chemical group 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000813 microbial effect Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- PHEDXBVPIONUQT-RGYGYFBISA-N phorbol 13-acetate 12-myristate Chemical compound C([C@]1(O)C(=O)C(C)=C[C@H]1[C@@]1(O)[C@H](C)[C@H]2OC(=O)CCCCCCCCCCCCC)C(CO)=C[C@H]1[C@H]1[C@]2(OC(C)=O)C1(C)C PHEDXBVPIONUQT-RGYGYFBISA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/155,523 | 2002-05-23 | ||
| US10/155,523 US7067227B2 (en) | 2002-05-23 | 2002-05-23 | Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing |
| PCT/US2003/016058 WO2004001797A2 (en) | 2002-05-23 | 2003-05-23 | Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050010821A true KR20050010821A (ko) | 2005-01-28 |
Family
ID=29549089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7018660A Ceased KR20050010821A (ko) | 2002-05-23 | 2003-05-23 | 포토 마스크 제조 및 반도체 공정에서 사용하기 위한감광성의 화학적 증폭형 포토레지스트 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7067227B2 (https=) |
| EP (1) | EP1506454A2 (https=) |
| JP (2) | JP4427447B2 (https=) |
| KR (1) | KR20050010821A (https=) |
| WO (1) | WO2004001797A2 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050229145A1 (en) * | 2004-03-29 | 2005-10-13 | Irby John H Iv | Method and system for chrome cut-out regions on a reticle |
| US20050271711A1 (en) | 2004-04-26 | 2005-12-08 | The Procter & Gamble Company | Therapeutic antimicrobial compositions and methods |
| JP2006145853A (ja) * | 2004-11-19 | 2006-06-08 | Jsr Corp | 感放射線性樹脂組成物およびメッキ造形物の製造方法 |
| JP4828201B2 (ja) * | 2005-10-19 | 2011-11-30 | 東京応化工業株式会社 | 化学増幅型ホトレジスト組成物、レジスト層積層体およびレジストパタ−ン形成方法 |
| US7754394B2 (en) * | 2006-11-14 | 2010-07-13 | International Business Machines Corporation | Method to etch chrome for photomask fabrication |
| WO2008070188A1 (en) * | 2006-12-08 | 2008-06-12 | Applied Materials, Inc. | Methods and apparatus for multi-exposure patterning |
| US20080192253A1 (en) * | 2007-02-08 | 2008-08-14 | Susie Xiuru Yang | Method and test-structure for determining an offset between lithographic masks |
| US8292402B2 (en) * | 2008-02-13 | 2012-10-23 | Lexmark International, Inc. | Photoimageable dry film formulation |
| US20140356789A1 (en) * | 2013-05-31 | 2014-12-04 | Orthogonal, Inc. | Fluorinated photopolymer with integrated anthracene sensitizer |
| US9500948B2 (en) * | 2013-05-31 | 2016-11-22 | Orthogonal, Inc. | Fluorinated photoresist with integrated sensitizer |
| WO2015073534A1 (en) | 2013-11-13 | 2015-05-21 | Orthogonal, Inc. | Branched fluorinated photopolymers |
| JP6344640B2 (ja) * | 2013-11-27 | 2018-06-20 | 川崎化成工業株式会社 | ラジカル重合増感剤 |
| WO2015120025A1 (en) | 2014-02-07 | 2015-08-13 | Orthogonal, Inc. | Cross-linkable fluorinated photopolymer |
| JP6537261B2 (ja) * | 2014-12-09 | 2019-07-03 | 旭有機材株式会社 | 樹脂原料、フェノール樹脂及びアントラセン誘導体の製造方法 |
| CN107251190B (zh) | 2014-12-24 | 2020-11-10 | 正交公司 | 电子装置的光刻图案化 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278010A (en) | 1989-03-03 | 1994-01-11 | International Business Machines Corporation | Composition for photo imaging |
| US5023164A (en) | 1989-10-23 | 1991-06-11 | International Business Machines Corporation | Highly sensitive dry developable deep UV photoresist |
| US5055439A (en) | 1989-12-27 | 1991-10-08 | International Business Machines Corporation | Photoacid generating composition and sensitizer therefor |
| KR930008139B1 (en) * | 1990-08-30 | 1993-08-26 | Samsung Electronics Co Ltd | Method for preparation of pattern |
| US5322765A (en) | 1991-11-22 | 1994-06-21 | International Business Machines Corporation | Dry developable photoresist compositions and method for use thereof |
| WO1994024610A1 (en) * | 1993-04-13 | 1994-10-27 | Astarix, Inc. | High resolution mask programmable via selected by low resolution photomasking |
| JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
| KR960015081A (ko) * | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
| JP3203995B2 (ja) * | 1993-12-24 | 2001-09-04 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
| DE69511141T2 (de) * | 1994-03-28 | 2000-04-20 | Matsushita Electric Industrial Co., Ltd. | Resistzusammensetzung für tiefe Ultraviolettbelichtung |
| JP3317576B2 (ja) * | 1994-05-12 | 2002-08-26 | 富士写真フイルム株式会社 | ポジ型感光性樹脂組成物 |
| JP3579946B2 (ja) | 1995-02-13 | 2004-10-20 | Ｊｓｒ株式会社 | 化学増幅型感放射線性樹脂組成物 |
| US5609989A (en) * | 1995-06-06 | 1997-03-11 | International Business Machines, Corporation | Acid scavengers for use in chemically amplified photoresists |
| JP3433017B2 (ja) * | 1995-08-31 | 2003-08-04 | 株式会社東芝 | 感光性組成物 |
| ATE244904T1 (de) | 1995-12-21 | 2003-07-15 | Wako Pure Chem Ind Ltd | Polymerzusammensetzung und rezistmaterial |
| JP3589365B2 (ja) * | 1996-02-02 | 2004-11-17 | 富士写真フイルム株式会社 | ポジ画像形成組成物 |
| JP3605939B2 (ja) * | 1996-05-13 | 2004-12-22 | 東洋インキ製造株式会社 | 感エネルギー線ポジ型感応性組成物 |
| JP3693199B2 (ja) * | 1996-07-10 | 2005-09-07 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| JP3808140B2 (ja) * | 1996-09-10 | 2006-08-09 | Ａｚエレクトロニックマテリアルズ株式会社 | 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料 |
| US5955222A (en) * | 1996-12-03 | 1999-09-21 | International Business Machines Corporation | Method of making a rim-type phase-shift mask and mask manufactured thereby |
| US5976770A (en) * | 1998-01-15 | 1999-11-02 | Shipley Company, L.L.C. | Dyed photoresists and methods and articles of manufacture comprising same |
| US6303263B1 (en) * | 1998-02-25 | 2001-10-16 | International Business Machines Machines | Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups |
| US6103447A (en) * | 1998-02-25 | 2000-08-15 | International Business Machines Corp. | Approach to formulating irradiation sensitive positive resists |
| JP2000035665A (ja) * | 1998-05-11 | 2000-02-02 | Kunihiro Ichimura | 酸増殖剤及び感光性組成物 |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| US6210856B1 (en) * | 1999-01-27 | 2001-04-03 | International Business Machines Corporation | Resist composition and process of forming a patterned resist layer on a substrate |
| US6251564B1 (en) * | 1999-05-17 | 2001-06-26 | United Microelectronics Corp. | Method for forming a pattern with both logic-type and memory-type circuit |
-
2002
- 2002-05-23 US US10/155,523 patent/US7067227B2/en not_active Expired - Fee Related
-
2003
- 2003-05-23 JP JP2004515696A patent/JP4427447B2/ja not_active Expired - Fee Related
- 2003-05-23 EP EP03748908A patent/EP1506454A2/en not_active Withdrawn
- 2003-05-23 KR KR10-2004-7018660A patent/KR20050010821A/ko not_active Ceased
- 2003-05-23 WO PCT/US2003/016058 patent/WO2004001797A2/en not_active Ceased
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2009
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2005527003A (ja) | 2005-09-08 |
| JP4996667B2 (ja) | 2012-08-08 |
| WO2004001797A2 (en) | 2003-12-31 |
| WO2004001797A9 (en) | 2004-02-12 |
| WO2004001797A3 (en) | 2004-07-01 |
| EP1506454A2 (en) | 2005-02-16 |
| JP4427447B2 (ja) | 2010-03-10 |
| JP2010092058A (ja) | 2010-04-22 |
| US20030219675A1 (en) | 2003-11-27 |
| US7067227B2 (en) | 2006-06-27 |
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