JP2005524235A5 - - Google Patents

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Publication number
JP2005524235A5
JP2005524235A5 JP2004500540A JP2004500540A JP2005524235A5 JP 2005524235 A5 JP2005524235 A5 JP 2005524235A5 JP 2004500540 A JP2004500540 A JP 2004500540A JP 2004500540 A JP2004500540 A JP 2004500540A JP 2005524235 A5 JP2005524235 A5 JP 2005524235A5
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JP
Japan
Prior art keywords
wafer
housing
gas
edge
flow
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004500540A
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English (en)
Japanese (ja)
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JP2005524235A (ja
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Publication date
Priority claimed from US10/401,074 external-priority patent/US6936546B2/en
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Publication of JP2005524235A publication Critical patent/JP2005524235A/ja
Publication of JP2005524235A5 publication Critical patent/JP2005524235A5/ja
Pending legal-status Critical Current

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JP2004500540A 2002-04-26 2003-04-24 処理工程内で半導体基板の縁部近傍領域に薄膜を成形するための方法及び装置 Pending JP2005524235A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37615402P 2002-04-26 2002-04-26
US10/401,074 US6936546B2 (en) 2002-04-26 2003-03-27 Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates
PCT/US2003/012615 WO2003092337A2 (en) 2002-04-26 2003-04-24 Method and apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates

Publications (2)

Publication Number Publication Date
JP2005524235A JP2005524235A (ja) 2005-08-11
JP2005524235A5 true JP2005524235A5 (enExample) 2006-06-15

Family

ID=29254649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004500540A Pending JP2005524235A (ja) 2002-04-26 2003-04-24 処理工程内で半導体基板の縁部近傍領域に薄膜を成形するための方法及び装置

Country Status (6)

Country Link
US (2) US6936546B2 (enExample)
EP (1) EP1500129A4 (enExample)
JP (1) JP2005524235A (enExample)
KR (1) KR20050010770A (enExample)
AU (1) AU2003225127A1 (enExample)
WO (1) WO2003092337A2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070066076A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Substrate processing method and apparatus using a combustion flame
US20070062647A1 (en) * 2005-09-19 2007-03-22 Bailey Joel B Method and apparatus for isolative substrate edge area processing
US20060172526A1 (en) * 2003-10-16 2006-08-03 United Microelectronics Corp. Method for preventing edge peeling defect
KR100625309B1 (ko) * 2004-05-04 2006-09-20 세메스 주식회사 상압 플라즈마 발생기 및 이를 사용한 기판 가장자리 식각장치
US7090782B1 (en) * 2004-09-03 2006-08-15 Lam Research Corporation Etch with uniformity control
JP4815801B2 (ja) * 2004-12-28 2011-11-16 信越半導体株式会社 シリコンウエーハの研磨方法および製造方法および円板状ワークの研磨装置ならびにシリコンウエーハ
JP4594767B2 (ja) * 2005-03-09 2010-12-08 積水化学工業株式会社 基材外周処理装置
SG126885A1 (en) * 2005-04-27 2006-11-29 Disco Corp Semiconductor wafer and processing method for same
US7256148B2 (en) * 2005-05-12 2007-08-14 International Business Machines Corporation Method for treating a wafer edge
KR101218114B1 (ko) * 2005-08-04 2013-01-18 주성엔지니어링(주) 플라즈마 식각 장치
US7651585B2 (en) * 2005-09-26 2010-01-26 Lam Research Corporation Apparatus for the removal of an edge polymer from a substrate and methods therefor
US7691278B2 (en) * 2005-09-27 2010-04-06 Lam Research Corporation Apparatus for the removal of a fluorinated polymer from a substrate and methods therefor
US7662253B2 (en) * 2005-09-27 2010-02-16 Lam Research Corporation Apparatus for the removal of a metal oxide from a substrate and methods therefor
WO2007107176A1 (en) * 2006-03-17 2007-09-27 Freescale Semiconductor, Inc. Method of reducing risk of delamination of a layer of a semiconductor device
US20080178913A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Process for wafer backside polymer removal with a ring of plasma under the wafer
US7967996B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
US20080179288A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Process for wafer backside polymer removal and wafer front side scavenger plasma
US20080179287A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Process for wafer backside polymer removal with wafer front side gas purge
US20080289651A1 (en) * 2007-05-25 2008-11-27 International Business Machines Corporation Method and apparatus for wafer edge cleaning
US20090004865A1 (en) * 2007-06-29 2009-01-01 Kastenmeier Bernd E E Method for treating a wafer edge
FR2928641B1 (fr) * 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
US8986558B2 (en) * 2008-09-01 2015-03-24 Japan Science And Technology Agency Plasma etching method, plasma etching device, and method for producing photonic crystal
TWI407842B (zh) * 2008-12-31 2013-09-01 Ind Tech Res Inst 大氣電漿大幅寬處理裝置
US9111729B2 (en) * 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
WO2011139852A2 (en) 2010-04-29 2011-11-10 Skyline Solar, Inc. Thin film coating pinning arrangement
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US20120129318A1 (en) * 2010-11-24 2012-05-24 Semiconductor Energy Laboratory Co., Ltd. Atmospheric pressure plasma etching apparatus and method for manufacturing soi substrate
US20130098390A1 (en) * 2011-10-25 2013-04-25 Infineon Technologies Ag Device for processing a carrier and a method for processing a carrier
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
DE112014006368B4 (de) * 2014-02-13 2024-05-08 Mitsubishi Electric Corporation Halbleitervorrichtungsfertigungsverfahren
US9633862B2 (en) 2015-08-31 2017-04-25 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
TWI674475B (zh) * 2015-10-22 2019-10-11 特銓股份有限公司 微塵檢測機構
US12272545B2 (en) 2020-03-19 2025-04-08 International Business Machines Corporation Embedded metal contamination removal from BEOL wafers
CN114843173A (zh) * 2021-02-02 2022-08-02 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
JP2024172823A (ja) * 2023-06-01 2024-12-12 株式会社荏原製作所 基板のベベル部を含む外周部に保護膜を成膜する方法
JP2025028537A (ja) * 2023-08-18 2025-03-03 株式会社荏原製作所 基板のベベル部を含む外周部に保護膜を成膜する方法

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3762941A (en) 1971-05-12 1973-10-02 Celanese Corp Modification of carbon fiber surface characteristics
US4012307A (en) 1975-12-05 1977-03-15 General Dynamics Corporation Method for conditioning drilled holes in multilayer wiring boards
JPS5562734A (en) 1978-11-01 1980-05-12 Toshiba Corp Ion source and ion etching method
JPS6056431B2 (ja) 1980-10-09 1985-12-10 三菱電機株式会社 プラズマエツチング装置
US4510176A (en) 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
JPS60198822A (ja) 1984-03-23 1985-10-08 Anelva Corp ドライエツチング装置
US4555303A (en) 1984-10-02 1985-11-26 Motorola, Inc. Oxidation of material in high pressure oxygen plasma
GB8516984D0 (en) 1985-07-04 1985-08-07 British Telecomm Etching method
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4708766A (en) 1986-11-07 1987-11-24 Texas Instruments Incorporated Hydrogen iodide etch of tin oxide
GB8713986D0 (en) 1987-06-16 1987-07-22 Shell Int Research Apparatus for plasma surface treating
US4872938A (en) 1987-07-16 1989-10-10 Texas Instruments Incorporated Processing apparatus
US4857382A (en) 1988-04-26 1989-08-15 General Electric Company Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides
EP0346055B1 (en) 1988-06-06 1995-04-19 Research Development Corporation Of Japan Method for causing plasma reaction under atmospheric pressure
US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
GB8827933D0 (en) 1988-11-30 1989-01-05 Plessey Co Plc Improvements relating to soldering processes
US4875989A (en) 1988-12-05 1989-10-24 Texas Instruments Incorporated Wafer processing apparatus
US4921157A (en) 1989-03-15 1990-05-01 Microelectronics Center Of North Carolina Fluxless soldering process
JPH03257182A (ja) 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
JP2897055B2 (ja) 1990-03-14 1999-05-31 株式会社ブリヂストン ゴム系複合材料の製造方法
US5045166A (en) 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
US5147520A (en) 1991-02-15 1992-09-15 Mcnc Apparatus and method for controlling processing uniformity in a magnetron
JP3206095B2 (ja) 1991-04-12 2001-09-04 株式会社ブリヂストン 表面処理方法及びその装置
US5391885A (en) * 1991-04-26 1995-02-21 Sharp Kabushiki Kaisha Method of detecting and analyzing defective portion of semiconductor element and apparatus for detecting and analyzing the same
JPH04329640A (ja) 1991-05-01 1992-11-18 Mitsubishi Electric Corp 配線層のドライエッチング方法
RU2030811C1 (ru) 1991-05-24 1995-03-10 Инженерный центр "Плазмодинамика" Установка для плазменной обработки твердого тела
JP3283889B2 (ja) 1991-07-24 2002-05-20 株式会社きもと 防錆処理方法
US5391855A (en) 1991-08-01 1995-02-21 Komoto Tech, Inc. Apparatus for atmospheric plasma treatment of a sheet-like structure
US5316739A (en) 1991-08-20 1994-05-31 Bridgestone Corporation Method and apparatus for surface treatment
JP3024317B2 (ja) 1991-10-25 2000-03-21 日本電気株式会社 半導体装置の製造方法
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5201995A (en) 1992-03-16 1993-04-13 Mcnc Alternating cyclic pressure modulation process for selective area deposition
US5368685A (en) 1992-03-24 1994-11-29 Hitachi, Ltd. Dry etching apparatus and method
US5308447A (en) 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
JP2572924B2 (ja) 1992-09-04 1997-01-16 醇 西脇 大気圧プラズマによる金属の表面処理法
JPH06224154A (ja) 1993-01-25 1994-08-12 Mitsubishi Electric Corp プラズマ処理装置
US5372674A (en) 1993-05-14 1994-12-13 Hughes Aircraft Company Electrode for use in a plasma assisted chemical etching process
US5474640A (en) 1993-07-19 1995-12-12 Applied Materials, Inc. Apparatus for marking a substrate using ionized gas
US5608943A (en) * 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
US5449432A (en) 1993-10-25 1995-09-12 Applied Materials, Inc. Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
US5499754A (en) 1993-11-19 1996-03-19 Mcnc Fluxless soldering sample pretreating system
US5407121A (en) 1993-11-19 1995-04-18 Mcnc Fluxless soldering of copper
JP3521587B2 (ja) 1995-02-07 2004-04-19 セイコーエプソン株式会社 基板周縁の不要物除去方法及び装置並びにそれを用いた塗布方法
FR2735053B1 (fr) 1995-06-09 1997-07-25 Air Liquide Procede et dispositif de brasage a la vague integrant une operation de fluxage par voie seche
WO1997003456A1 (de) 1995-07-12 1997-01-30 Sez Semiconductor-Equipment Zubehör Für Die Halbleiterfertigung Gesellschaft Mbh Träger für scheibenförmige gegenstände, insbesondere siliziumscheiben
US5597438A (en) 1995-09-14 1997-01-28 Siemens Aktiengesellschaft Etch chamber having three independently controlled electrodes
DE19622015A1 (de) 1996-05-31 1997-12-04 Siemens Ag Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage
US5688555A (en) 1996-06-03 1997-11-18 Taiwan Semiconductor Manufacturing Company Ltd Gas barrier during edge rinse of SOG coating process to prevent SOG hump formation
US5693241A (en) 1996-06-18 1997-12-02 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Atmospheric pressure method and apparatus for removal of organic matter with atomic and ionic oxygen
US6413436B1 (en) * 1999-01-27 2002-07-02 Semitool, Inc. Selective treatment of the surface of a microelectronic workpiece
JP3629862B2 (ja) * 1996-12-24 2005-03-16 セイコーエプソン株式会社 基板周縁の不要物除去方法およびその装置
US5961772A (en) 1997-01-23 1999-10-05 The Regents Of The University Of California Atmospheric-pressure plasma jet
US5908566A (en) * 1997-09-17 1999-06-01 The United States Of America As Represented By The Secretary Of The Navy Modified plasma torch design for introducing sample air into inductively coupled plasma
US6027760A (en) * 1997-12-08 2000-02-22 Gurer; Emir Photoresist coating process control with solvent vapor sensor
US5897379A (en) 1997-12-19 1999-04-27 Sharp Microelectronics Technology, Inc. Low temperature system and method for CVD copper removal
US6265328B1 (en) * 1998-01-30 2001-07-24 Silicon Genesis Corporation Wafer edge engineering method and device
US6218640B1 (en) * 1999-07-19 2001-04-17 Timedomain Cvd, Inc. Atmospheric pressure inductive plasma apparatus
US6103099A (en) * 1998-09-04 2000-08-15 Exxon Research And Engineering Company Production of synthetic lubricant and lubricant base stock without dewaxing
JP2000186000A (ja) * 1998-12-22 2000-07-04 Speedfam-Ipec Co Ltd シリコンウェーハ加工方法およびその装置
DE59900743D1 (de) * 1999-04-28 2002-02-28 Sez Semiconduct Equip Zubehoer Vorrichtung und Verfahren zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
US6309981B1 (en) 1999-10-01 2001-10-30 Novellus Systems, Inc. Edge bevel removal of copper from silicon wafers
JP3405312B2 (ja) * 2000-02-25 2003-05-12 日本電気株式会社 塗布膜除去装置
US6531069B1 (en) * 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections

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