JP2005515614A5 - - Google Patents

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Publication number
JP2005515614A5
JP2005515614A5 JP2002592178A JP2002592178A JP2005515614A5 JP 2005515614 A5 JP2005515614 A5 JP 2005515614A5 JP 2002592178 A JP2002592178 A JP 2002592178A JP 2002592178 A JP2002592178 A JP 2002592178A JP 2005515614 A5 JP2005515614 A5 JP 2005515614A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2002592178A
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JP4382360B2 (ja
JP2005515614A (ja
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Priority claimed from US09/862,532 external-priority patent/US6740951B2/en
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Publication of JP2005515614A publication Critical patent/JP2005515614A/ja
Publication of JP2005515614A5 publication Critical patent/JP2005515614A5/ja
Application granted granted Critical
Publication of JP4382360B2 publication Critical patent/JP4382360B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002592178A 2001-05-22 2002-05-22 ショットキー整流素子及びその製造方法 Expired - Lifetime JP4382360B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/862,532 US6740951B2 (en) 2001-05-22 2001-05-22 Two-mask trench schottky diode
PCT/US2002/016096 WO2002095812A1 (en) 2001-05-22 2002-05-22 Two-mask trench schottky diode

Publications (3)

Publication Number Publication Date
JP2005515614A JP2005515614A (ja) 2005-05-26
JP2005515614A5 true JP2005515614A5 (ja) 2006-01-05
JP4382360B2 JP4382360B2 (ja) 2009-12-09

Family

ID=25338698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002592178A Expired - Lifetime JP4382360B2 (ja) 2001-05-22 2002-05-22 ショットキー整流素子及びその製造方法

Country Status (7)

Country Link
US (1) US6740951B2 (ja)
EP (1) EP1396015A4 (ja)
JP (1) JP4382360B2 (ja)
KR (1) KR100884078B1 (ja)
CN (1) CN1314082C (ja)
TW (1) TW571445B (ja)
WO (1) WO2002095812A1 (ja)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6998694B2 (en) * 2003-08-05 2006-02-14 Shye-Lin Wu High switching speed two mask Schottky diode with high field breakdown
US7973381B2 (en) * 2003-09-08 2011-07-05 International Rectifier Corporation Thick field oxide termination for trench schottky device
US7064408B2 (en) * 2003-12-10 2006-06-20 Shye-Lin Wu Schottky barrier diode and method of making the same
FR2864345B1 (fr) * 2003-12-18 2006-03-31 St Microelectronics Sa Realisation de la peripherie d'une diode schottky a tranchees mos
US7560787B2 (en) * 2005-12-22 2009-07-14 Fairchild Semiconductor Corporation Trench field plate termination for power devices
US8384181B2 (en) * 2007-02-09 2013-02-26 Cree, Inc. Schottky diode structure with silicon mesa and junction barrier Schottky wells
JP2008226906A (ja) * 2007-03-08 2008-09-25 Sharp Corp 窒化物半導体発光素子
JP5531620B2 (ja) * 2010-01-05 2014-06-25 富士電機株式会社 半導体装置
CN101800252B (zh) * 2010-03-04 2012-05-30 无锡新洁能功率半导体有限公司 沟槽型肖特基势垒整流器及其制造方法
CN102446980A (zh) * 2010-09-30 2012-05-09 比亚迪股份有限公司 一种低正向压降肖特基二极管及其制造方法
TWM406804U (en) * 2011-01-31 2011-07-01 Taiwan Semiconductor Co Ltd Structure of termination trench region for Schottky diode
JP2013030618A (ja) 2011-07-28 2013-02-07 Rohm Co Ltd 半導体装置
TWI451498B (zh) * 2011-12-28 2014-09-01 Pfc Device Corp 具快速反應速度的金氧半ｐ－ｎ接面二極體及其製作方法
CN103187271A (zh) * 2011-12-30 2013-07-03 敦南科技股份有限公司 二极管结构及其制造方法
CN103426910B (zh) 2012-05-24 2016-01-20 杰力科技股份有限公司 功率半导体元件及其边缘终端结构
KR101463078B1 (ko) * 2013-11-08 2014-12-04 주식회사 케이이씨 쇼트키 배리어 다이오드 및 그의 제조 방법
US9178015B2 (en) * 2014-01-10 2015-11-03 Vishay General Semiconductor Llc Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applications
EP2945192A1 (en) * 2014-05-14 2015-11-18 Nxp B.V. Semiconductive device and associated method of manufacture
CN104241285B (zh) * 2014-09-30 2017-07-28 桑德斯微电子器件（南京）有限公司 一种肖特基势垒二极管芯片生产工艺
CN107293530B (zh) * 2015-01-19 2020-03-24 苏州固锝电子股份有限公司 高精度高良率整流器件
CN104900719A (zh) * 2015-05-12 2015-09-09 上海格瑞宝电子有限公司 一种沟槽肖特基二极管终端结构及其制备方法
TWI576920B (zh) * 2015-11-20 2017-04-01 敦南科技股份有限公司 二極體元件及其製造方法
CN110313071B (zh) * 2017-02-10 2022-03-01 三菱电机株式会社 半导体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2151844A (en) * 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
GB2176339A (en) * 1985-06-10 1986-12-17 Philips Electronic Associated Semiconductor device with schottky junctions
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US6078090A (en) 1997-04-02 2000-06-20 Siliconix Incorporated Trench-gated Schottky diode with integral clamping diode
US5612567A (en) 1996-05-13 1997-03-18 North Carolina State University Schottky barrier rectifiers and methods of forming same
GB0002235D0 (en) * 2000-02-02 2000-03-22 Koninkl Philips Electronics Nv Trenched schottky rectifiers
JP3691736B2 (ja) * 2000-07-31 2005-09-07 新電元工業株式会社 半導体装置
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure

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