M406804 五、新型說明： 【新型所屬之技術領域】 本創作係關於一種蕭特基二極體之終止區溝槽結構，尤指一種於終止 區形成一個以上且相互呈函數曲線形狀排列之溝槽，而具低逆向漏電流與 高逆向偏壓值之蕭特基二極體。 【先前技術】 s知之蕭特基二極體為一種導通電壓降較低、允許高速切換的二極 Μ，疋利用蕭特基勢壘(Schottky Barrier)特性而產生的電子元件，蕭特基二 極體是利用金屬-半導體接面作為蕭特基勢壘，以產生整流的效果，蕭特基 勢壘的特性使得蕭特基二極體的導通電壓降較低，而且可以提高切換的速 度，並廣泛被使祕如交換式電賴麟、通減料需高速開_換的 場合中’但基二極體最大馳點是其反向偏雜低，像使时及金屬 為材料的蕭特基H其反向偏_定耐雜低，且反向漏電流不但較 大’而且會隨著溫度昇高而增加到提高，可能會造成溫昇失控的問題，致 使蕭特基二極體於實際使㈣的反向驗必紐紙其敏值小报多，而 讓蕭特基二極體的應用受到限制。 或有萌生改良者，在蕭特基二極體結構中加人溝槽結構，以期改盖上 ^反向偏壓值低、反向漏電流高之問題，諸如中國專利第江咖贿〇2 號^模溝槽肖特基整流陶製造方法細專利案，職示典型習知 產HI連結，使該半導體終止區的溝槽製程方面需多道光罩，致使讓生 產成本偏咼，而不符產業利用之經濟效益。 【新型内容】 上述習知蕭特基二極體之溝槽結構 由於半導體終止區之溝槽結構複 3 M406804 雜’需要諸如多道光罩之繁複製程，製造成本高，而不符產業利用之經濟 效益。 有鑑於此’極需要發展一種蕭特基二極體，在於終止區部份之溝槽形 成’除可具有逆向偏壓時之逆向漏電流降低與有較高之逆向偏壓電壓值之 特性外，並需簡化其製程，使其製造成本降低，以提昇產業之利用價值。 緣此，本創作之主要目的，係在提供一種蕭特基二極體之終止區溝槽 結構’包含-半導體基層、一遙晶層、複數絕緣層、多晶石夕層及一導體層， 其中’該半導體基層為陰極端，如層結合於半導體基層之上，該蟲晶層 上形成-晶胞區與-終止區，該晶胞區侧形成複數第一溝槽 ，該終止區 形成個以上之第一溝槽’各第二溝槽間呈函數曲線形狀排列組合關係， “、、邑緣層、’Ό σ於第—溝槽及第二溝槽内面’該多晶♦層結合於絕緣層内 面’該導體層結合於蠢晶層及第—溝槽及第二溝槽上端，以使該導體層形 成陽極端’以藉由各第二溝綱卿成之函數鱗雜湖組合結構，使 該蕭特基二極體之陽極端與陰極端間，可降低其逆向漏電流與具有較高之 本創作之蕭特基二極體之終止區溝槽結構之功效，係在於藉由該终止 =之第二溝制所形成之函數鱗形狀排顺合，使該終止區之第二溝槽 厭社， 體具有降低其遗向漏電流與具有較高之逆向偏 壓值之特性外，並可簡化光罩製， 製耘即可形第二溝槽結構，可大幅降低其 生產成本，並進而提昇其產業利用價值。 【實施方式】 請參閱第一圖所示，為本創作蕾 的第警⑽甘士 零之蕭特基二極體之終止區溝槽結構100 « “、. 土—極體之終止區溝槽結構100係包括一半 低濃度嫩編合於半㈣ 導體基層10，該半導體基層1〇為 土巧川馮N+基材’作為陰極 一 低濃度換雜N-磊異钴厶仇、上播μ ^ _ 日日s 20為 晶胞 4 M406804 區21與一終止區22，該晶胞區21蝕刻形成複數第一溝槽23，該終止區22 蝕刻形成一個以上之第二溝槽24,該第二溝槽24呈函數曲線形狀排列組合 關係’如在第一圖中，顯示一第二溝槽24呈如階梯狀的函數曲線形狀。 複數絕緣層30，係以氧化物構成，如二氧化矽，各絕緣層30分別結合 於該第一溝槽23及第二溝槽24内面。 複數多晶矽層40,分別結合於該結合於第一溝槽23之絕緣層30内面。 . 一導體層50,結合於磊晶層20及第一溝槽23及第二溝槽24上端，使 該導體層50分別與磊晶層20、第一溝槽23中之絕緣層30與多晶矽層40 頂端、第二溝槽24中之絕緣層30與多晶矽層40頂端連結，以使該導體層 • 5G碱陽極端。 請再配合第二圖所示’為本創作之蕭特基二極體之終止區溝槽結構1〇〇 的第二實施例，其中，顯示該終止區22上蝕刻形成複數第二溝槽24，該第 二溝槽24間相互排列形成函數曲線形狀排列組合結構，如在第二圖中則顯 示為各第二溝槽24間深度逐漸遞減的函數曲線形狀，但此第二溝槽24間 之排列組合形狀或結構，並非以該第二溝槽24間之深度或寬度變化為限。 凊再參閱第二圖、第四圖及第五圖所示，分別顯示習知蕭特基二極體、 本創作第-實献第二實_之舰基二極體之耻區賴結構的電 •場分佈實驗圖，其中，第三圖中所顯示之第一空乏區(Depletion region)A1 及第-空乏區邊界線A2，係表示習知之麟基二極體之終止區於逆向偏壓 .時之電場分佩態，顯示該第-妓區A1與第_空乏區邊界線A2形成較 為平坦之姐，而可看出其逆向漏電流錄高，且逆向偏壓值較低。 •相對地’如第四圖所示之第二空乏區A3及第二空乏區邊界線A4，以 及’第五圖所示之第三空乏區A5及第三空乏區邊界線A6，分別為第一圖 及第二圖所不本創作之蕭特基二極體之終止區溝槽結構的第—實施例 及第二實施例，於逆向偏壓時之電場分佈狀態，並分聰示出與第二溝槽 24本身的函數物轉或各第二溝槽24_成之咖_列组合形 5 M406804 狀相同，且該終止區22 t之第二空乏區A3、第三空乏區a 心 二空之區邊界線Μ與第三空乏區邊界線A6呈現較為 从’該第 逆向偏壓時較低的漏電流值及較高之逆向偏壓值特性。狀’而具有 請再配合第六圖、第七圖及第人圖所示，分纖 本創作第-實施及第二實施例之1㈣基一極體、 战驗— 耳糊之肅—極叙終止轉槽結構跡於逆 =辦之電子縣游離中心實驗圖，其中，_中所顯示之第 區=1示習知之蕭縣二鋪之終止祕逆向驗時之電子郷游離中 〜狀也’顯不該第-撞擊區塊B1形狀與該第三圖所示之第— Μ形狀相吻合，输平坦曲_塊，__向健= 逆向偏壓值較低。 且 相對地，如第七圖所示之第二撞擊區塊S2，以及，第八圖所示之第三 撞擊區塊S3，分稱第—圖及第二圖所示本創作之f特基二極體之終止區 溝槽結構100的第-實施例及第二實施例，於逆向偏壓時之電子撞擊游離 中心狀態，且分麵示出與第_所示之第二空乏區邊界線Μ，以及，第 五圖所不之第—二乏區邊界線A6形狀相吻合且皆呈現下端較為陡山肖之區 塊形狀，而具奴向偏壓雜低觸電紐及較高之逆向偏壓值特性。 請再參閱第九_示，為習知蕭特基二極體、本創作第—實施及第二 實知例之蕭特基—極n之終止區溝槽結構丨⑻的逆向漏電流及逆向偏壓值 實驗曲線圖’其中，第—曲線C1代表習知蕭特基二極體之終止區的逆向漏 電流及逆向偏壓值曲線；第二曲線ο代表第一圖所示本創作之蕭特基二極 體之終止區溝槽結構1〇〇第一實施例的逆向漏電流及逆向偏壓值曲線，以 及，第三曲線C3代表第二_林創狀驗基二鋪之終止區溝槽結構 100第-實Μ綱逆向漏電流及逆向偏壓值曲線，該橫向軸為·ν，縱向 轴為電流I’由該第-曲線α、第二曲線C2及第三曲線C3相較下，確可 進一步印證，本創作之蕭特基二極體之終止區溝槽結構1〇〇第一實施例及 第二實施例’確較f知蕭特基二極體之終止區，具有較低之逆向漏電值及 6 M406804 較高之逆向偏壓之耐高壓值特性，同時，本創作之簫特基二極體之終止區 溝槽結構100確可較如上述中國專利第ZL028105702號「雙掩模溝槽肖特 基整流器及其製造方法」發明專利前案之半導體終止區的溝槽形成製程簡 化，且元件製造成本也相對較低。 综上所述，本創作之蕭特基二極體之終止區溝槽結構100所列舉之各 圖式及說明，係為便於說明本創作之技術内容，所列舉之實施例之一隅， 並非用以限制本創作之範疇，舉凡是針對本創作之結構細部或元件的等效 變更與置換’當屬本創作之範傳，其範圍將由以下的申請專利範圍來界定 之。 【圖式簡單說明】 第一圖為本創作之蕭特基二極體之終止區溝槽結構之第一實施例圖； 第二圖為摘狀觸基二極體之耻區溝槽結構U施例圖； 第二圖為習知蕭特基二極體之終止區於逆向偏壓時之電場分佈實驗圖； 第四圖為本麟驗基二極體之終止區—結構第—實_，於逆向偏壓時 之電場分佈實驗圖； 第五圖為本鑛驗基二_之終止區賴結·三實細，於逆向偏壓時 之電場分佈實驗圖； 第六圖為習知蕭特基二極體之終止區於逆向偏壓時之電子撞擊游離中心 驗圖； 第七圖為本創作蕭特基一極體之終止區溝槽結構第一實施例，於逆向偏壓時 之電子撞擊游離中心實驗圖； 第八圖為本創作蕭特基二極體之終止區溝槽結構第二實施例，於逆向偏壓時 之電子撞擊游離中心實驗圖； 第九圖為本創作蕭特基二極體之終止區溝槽結構之逆向偏壓之漏電流與逆 向偏壓值實驗曲線圖。 7 M406804 【主要元件符號說明】 100蕭特基二極體之終止區溝槽結構 10 半導體基層 20 蟲晶層 21 晶胞區 22 終止區 23 第一溝槽 24 第二溝槽 30 絕緣層 40 多晶石夕層 50 導體層 A1 第一空乏區 A2 第一空乏區邊界線 A3 第二空乏區 A4 第二空乏區邊界線 A5 第三空乏區 A6 第三空乏區邊界線 B1 第一撞擊區塊 B2 第二撞擊區塊 B3 第三撞擊區塊 C1 第一曲線 C2 第二曲線 C3 第三曲線M406804 V. New Description: [New Technology Field] This paper is about a trench structure of the Schottky diode's termination region, especially a trench that is formed in the termination region and arranged in a function curve shape. , with a low reverse leakage current and a high reverse bias value of the Schottky diode. [Prior Art] It is known that the Schottky diode is a diode that has a low turn-on voltage drop and allows high-speed switching, and an electronic component that utilizes Schottky Barrier characteristics, Schottky II. The polar body uses a metal-semiconductor junction as a Schottky barrier to produce a rectifying effect. The characteristics of the Schottky barrier make the conduction voltage drop of the Schottky diode lower, and the switching speed can be improved. And it is widely used in the case of exchange-type electric Lai Lin, the reduction of material needs to be opened at high speed _ change in the case of 'the base diode's maximum point is its reverse partial low, like the time and metal as the material of the Schott The base H has a reverse bias, and the reverse leakage current is not only large but also increases with the increase of temperature, which may cause the temperature rise to be out of control, resulting in the Schottky diode. In fact, the reverse test of (4) has a small number of sensitive values, and the application of the Schottky diode is limited. Or there is a genetic improvement, adding a groove structure in the structure of the Schottky diode, in order to change the problem of low reverse bias value and high reverse leakage current, such as the Chinese patent Di Jiangcai bribe 2 No. die groove Schottky rectifier ceramic manufacturing method fine patent case, the job shows that the typical custom HI connection, so that the semiconductor termination zone groove process requires multiple masks, resulting in production costs are biased, not in line with the industry The economic benefits of utilization. [New content] The above-mentioned Schottky diode structure of the trench structure due to the trench structure of the semiconductor termination region 3 M406804 Miscellaneous 'requires a complicated reproduction process such as multi-pass mask, high manufacturing cost, and does not meet the economic benefits of industrial utilization . In view of the fact that it is extremely necessary to develop a Schottky diode, the trench formation in the termination region is characterized by a decrease in reverse leakage current and a higher reverse bias voltage value in addition to reverse bias. And it is necessary to simplify its manufacturing process and reduce its manufacturing costs to enhance the value of the industry. Accordingly, the main purpose of the present invention is to provide a trench structure of a Schottky diode, including a semiconductor substrate, a telecrystal layer, a plurality of insulating layers, a polycrystalline layer, and a conductor layer. Wherein the semiconductor substrate is a cathode end, such as a layer bonded to the semiconductor substrate, the crystal layer forming a - cell region and a termination region, the cell region side forming a plurality of first trenches, the termination region forming a The first trench of the first trenches has a function curve shape arrangement relationship between the second trenches, ",, the germanium edge layer, 'Ό σ in the first trench and the second trench inner surface'. In the inner surface of the insulating layer, the conductor layer is bonded to the stray layer and the upper end of the first trench and the second trench so that the conductor layer forms an anode end to form a scale lake combination by each second trench The structure is such that the reverse end leakage current between the anode end and the cathode end of the Schottky diode can reduce the effect of the trench structure of the termination region of the Schottky diode of the present invention. The scale of the function formed by the second groove of the termination = is aligned, The second trench of the termination region has the characteristics of reducing the leakage current and the high reverse bias value, and can simplify the reticle system, and the second trench structure can be formed. It can greatly reduce its production cost and further enhance its industrial utilization value. [Embodiment] Please refer to the first figure, which is the end zone trench of the Guardian (10) Ganshi Zero Schottky diode. Structure 100 « ",. Earth-polar body termination zone trench structure 100 series includes half of the low-concentration tenderly bonded to the semi-fourth (four) conductor base layer 10, the semiconductor base layer 1 is the Tuqiao Chuanfeng N+ substrate 'as a cathode Concentration-changing N-leis-cobalt enemies, on-demand μ ^ _ day s 20 is unit cell 4 M406804 region 21 and a termination region 22, the cell region 21 is etched to form a plurality of first trenches 23, the termination region 22 etching forms more than one second trench 24, and the second trench 24 is arranged in a function curve shape. As shown in the first figure, a second trench 24 is shown as a stepped function curve shape. The plurality of insulating layers 30 are made of an oxide such as cerium oxide, and the insulating layers 30 are bonded to the inner faces of the first trench 23 and the second trench 24, respectively. A plurality of polysilicon layers 40 are bonded to the inner faces of the insulating layer 30 bonded to the first trenches 23, respectively. A conductive layer 50 is bonded to the epitaxial layer 20 and the upper ends of the first trench 23 and the second trench 24 such that the conductor layer 50 and the epitaxial layer 20, the insulating layer 30 and the polysilicon in the first trench 23, respectively The top layer of the layer 40 and the insulating layer 30 in the second trench 24 are joined to the top end of the polysilicon layer 40 such that the conductor layer has a 5G base anode end. Please cooperate with the second embodiment of the termination region trench structure of the Schottky diode of the present invention shown in the second figure, wherein the termination region 22 is etched to form a plurality of second trenches 24 The second trenches 24 are arranged to form a function curve shape array combination structure, as shown in the second figure, the function curve shape gradually decreases in depth between the second trenches 24, but the second trenches 24 are The arrangement of the combined shapes or structures is not limited to the depth or width variation between the second grooves 24.凊Refer to the second, fourth and fifth figures, respectively, showing the shaky structure of the ship-based dipole of the traditional Schottky diode, the second creation of the creation. An electric field distribution experimental diagram, wherein the first depletion region A1 and the first-depletion region boundary line A2 shown in the third figure represent the reverse bias of the termination region of the conventional lining diode. The electric field of the time is divided into a state, which shows that the first 妓 zone A1 and the _ vacant zone boundary line A2 form a relatively flat sister, and it can be seen that the reverse leakage current is recorded high, and the reverse bias value is low. • Relatively 'the second vacant zone A3 and the second vacant zone boundary line A4 as shown in the fourth figure, and the third vacant zone A5 and the third vacant zone boundary line A6 shown in the fifth figure are respectively The first embodiment and the second embodiment of the trench structure of the termination region of the Schottky diode of the present invention, which are not illustrated in the first and second figures, are distributed in the reverse bias state, and are shown in the same manner. The function of the second groove 24 itself or the second groove 24_ is the same as the shape of the second row 24 M406804, and the second depletion zone A3 and the third depletion zone a of the termination zone 22 t The boundary line Μ of the empty region and the boundary line A6 of the third depletion region exhibit a lower leakage current value and a higher reverse bias value characteristic from the reverse bias. Shaped and please cooperate with the sixth figure, the seventh figure and the figure of the person, the first part of the creation of the split fiber and the first part of the second embodiment (the fourth), the first pole, the battle - the ear of the paste - the polar Ending the structure of the trough in the reverse = the electronic center of the county, the experimental map, in which the first area shown in _ = 1 shows the end of the Xiaoxian second shop, the end of the electronic 郷 free ~ ~ also ' It is obvious that the shape of the first-impact block B1 coincides with the shape of the first-shape shown in the third figure, and the flat-bend _ block, __xiangjian = the reverse bias value is low. And, in contrast, the second striking block S2 shown in FIG. 7 and the third striking block S3 shown in the eighth figure are respectively referred to as the first and second figures. In the first embodiment and the second embodiment of the termination region trench structure 100 of the diode, the electrons in the reverse bias state impinge on the free center state, and the facets show the boundary line with the second depletion region indicated by the first Μ, and, in the fifth figure, the shape of the boundary line A6 of the second-difference zone is consistent and both have the shape of the block at the lower end of the steep mountain, and the slave bias bias is low and the electric shock is relatively high. Pressure characteristics. Please refer to the ninth_representation, which is the reverse leakage current and reverse direction of the trench structure 丨(8) of the Schottky diode of the conventional Schottky diode, the first implementation of the present invention and the second practical example. The experimental value of the bias voltage value 'where the first curve C1 represents the reverse leakage current and the reverse bias value curve of the termination region of the conventional Schottky diode; the second curve ο represents the Xiao of the creation shown in the first figure The end region trench structure of the special base diode 1 逆 the reverse leakage current and the reverse bias value curve of the first embodiment, and the third curve C3 represents the termination groove of the second _ _ The groove structure 100 is a first-solid reverse leakage current and a reverse bias value curve, the transverse axis is ·ν, and the longitudinal axis is the current I' from the first curve α, the second curve C2 and the third curve C3. It is indeed further confirmed that the first embodiment and the second embodiment of the termination region of the Schottky diode of the present invention are indeed better than the termination region of the Schottky diode. The low reverse leakage value and the high voltage resistance of the reverse bias of 6 M406804, at the same time, the creation of this The trench structure 100 of the termination region of the diode can be simplified compared to the trench formation process of the semiconductor termination region of the invention of the "double mask trench Schottky rectifier and its manufacturing method" as described in the above-mentioned Chinese Patent No. ZL028105702. And component manufacturing costs are relatively low. In summary, the drawings and descriptions of the trench structure 100 of the termination region of the Schottky diode of the present invention are for ease of explanation of the technical content of the present creation, and one of the enumerated embodiments is not used. To limit the scope of this creation, the equivalent changes and replacements of the structural details or components of this creation are the scope of this creation, and the scope will be defined by the following patent application scope. [Simple diagram of the diagram] The first figure is the first embodiment of the trench structure of the termination region of the Schottky diode of the creation; the second diagram is the shabby trench structure U of the pick-up contact diode. The second figure is an experimental diagram of the electric field distribution of the termination region of the conventional Schottky diode in the reverse bias state; the fourth diagram is the termination region of the lining test diode - structure first - real_ The experimental diagram of the electric field distribution at the time of reverse bias; The fifth picture is the experimental diagram of the electric field distribution in the reverse zone when the termination zone of the mine is the second, and the sixth figure is the Xi Xiao. The termination region of the special base diode is in the reverse bias state of the electron impact free center map; the seventh figure is the first embodiment of the trench structure of the termination region of the Schottky diode, in the reverse bias state The electron impact free center experiment diagram; The eighth figure is the second embodiment of the trench structure of the termination region of the creation of the Schottky diode, the electron impact free center experimental diagram in the reverse bias; Experimental study on leakage current and reverse bias value of reverse bias of trench structure in termination region of special base diode line graph. 7 M406804 [Key element symbol description] 100 Schottky diode termination region trench structure 10 Semiconductor base layer 20 worm layer 21 Cell region 22 Termination region 23 First trench 24 Second trench 30 Insulation layer 40 Cryolite layer 50 Conductor layer A1 First empty area A2 First empty area boundary line A3 Second empty area A4 Second empty area boundary line A5 Third empty area A6 Third empty area boundary line B1 First impact block B2 Second impact block B3 third impact block C1 first curve C2 second curve C3 third curve