CN104241285B - 一种肖特基势垒二极管芯片生产工艺 - Google Patents
一种肖特基势垒二极管芯片生产工艺 Download PDFInfo
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- CN104241285B CN104241285B CN201410522228.7A CN201410522228A CN104241285B CN 104241285 B CN104241285 B CN 104241285B CN 201410522228 A CN201410522228 A CN 201410522228A CN 104241285 B CN104241285 B CN 104241285B
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- chip
- silicon
- silicon chip
- schottky
- metal
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000010410 layer Substances 0.000 claims abstract description 120
- 229910052751 metal Inorganic materials 0.000 claims abstract description 92
- 239000002184 metal Substances 0.000 claims abstract description 92
- 230000003647 oxidation Effects 0.000 claims abstract description 44
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 claims abstract description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 239000011241 protective layer Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 14
- 238000010301 surface-oxidation reaction Methods 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 230
- 229910052710 silicon Inorganic materials 0.000 claims description 226
- 239000010703 silicon Substances 0.000 claims description 226
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 48
- 238000001312 dry etching Methods 0.000 claims description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 28
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 28
- 238000001039 wet etching Methods 0.000 claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 25
- 239000000956 alloy Substances 0.000 claims description 25
- 238000001259 photo etching Methods 0.000 claims description 25
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 24
- 239000008367 deionised water Substances 0.000 claims description 24
- 229910021641 deionized water Inorganic materials 0.000 claims description 24
- 230000007797 corrosion Effects 0.000 claims description 18
- 238000005260 corrosion Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 229960002163 hydrogen peroxide Drugs 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000007654 immersion Methods 0.000 claims description 11
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000001947 vapour-phase growth Methods 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000005036 potential barrier Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 4
- 238000002294 plasma sputter deposition Methods 0.000 claims description 4
- 238000002791 soaking Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 2
- 239000010953 base metal Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000002585 base Substances 0.000 claims 1
- 238000005660 chlorination reaction Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000007792 gaseous phase Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000013049 sediment Substances 0.000 description 6
- 239000012071 phase Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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CN201410522228.7A CN104241285B (zh) | 2014-09-30 | 2014-09-30 | 一种肖特基势垒二极管芯片生产工艺 |
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CN113299767B (zh) * | 2021-05-21 | 2022-04-08 | 江苏东海半导体股份有限公司 | 一种沟槽型肖特基器件及其制造方法 |
CN115472497A (zh) * | 2022-07-28 | 2022-12-13 | 桑德斯微电子器件(南京)有限公司 | 一种改善沟槽型mos肖特基高温反偏老化性能的方法及器件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1620715A (zh) * | 2001-05-22 | 2005-05-25 | 通用半导体公司 | 双掩模沟槽肖特基二极管 |
CN102738246A (zh) * | 2011-04-08 | 2012-10-17 | 英飞凌科技股份有限公司 | 具有金属栅电极的肖特基二极管及其形成方法 |
CN102884631A (zh) * | 2010-03-16 | 2013-01-16 | 威世通用半导体公司 | 用于高电压应用的具有改良的终端结构的沟槽dmos器件 |
CN204067359U (zh) * | 2014-09-30 | 2014-12-31 | 桑德斯微电子器件(南京)有限公司 | 一种肖特基势垒二极管芯片 |
Family Cites Families (1)
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JP2014053392A (ja) * | 2012-09-06 | 2014-03-20 | Sumitomo Electric Ind Ltd | ワイドギャップ半導体装置およびその製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1620715A (zh) * | 2001-05-22 | 2005-05-25 | 通用半导体公司 | 双掩模沟槽肖特基二极管 |
CN102884631A (zh) * | 2010-03-16 | 2013-01-16 | 威世通用半导体公司 | 用于高电压应用的具有改良的终端结构的沟槽dmos器件 |
CN102738246A (zh) * | 2011-04-08 | 2012-10-17 | 英飞凌科技股份有限公司 | 具有金属栅电极的肖特基二极管及其形成方法 |
CN204067359U (zh) * | 2014-09-30 | 2014-12-31 | 桑德斯微电子器件(南京)有限公司 | 一种肖特基势垒二极管芯片 |
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Denomination of invention: Schottky barrier diode chip production technology Effective date of registration: 20200306 Granted publication date: 20170728 Pledgee: Bank of China Limited Nanjing City Branch Pledgor: SANGDEST MICROELECTRONICS (NANJING) CO.,LTD. Registration number: Y2020980000476 |
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Denomination of invention: A production process of Schottky barrier diode chip Effective date of registration: 20200927 Granted publication date: 20170728 Pledgee: Bank of China Limited Nanjing City Branch Pledgor: SANGDEST MICROELECTRONICS (NANJING) Co.,Ltd. Registration number: Y2020980006501 |
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Denomination of invention: A production process of Schottky barrier diode chip Effective date of registration: 20210926 Granted publication date: 20170728 Pledgee: Bank of China Limited by Share Ltd. Nanjing Xuanwu sub branch Pledgor: SANGDEST MICROELECTRONICS (NANJING) Co.,Ltd. Registration number: Y2021980009866 |
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