CN104576325A - 一种制作碳化硅sbd器件的方法及其正面保护方法 - Google Patents
一种制作碳化硅sbd器件的方法及其正面保护方法 Download PDFInfo
- Publication number
- CN104576325A CN104576325A CN201510041144.6A CN201510041144A CN104576325A CN 104576325 A CN104576325 A CN 104576325A CN 201510041144 A CN201510041144 A CN 201510041144A CN 104576325 A CN104576325 A CN 104576325A
- Authority
- CN
- China
- Prior art keywords
- sic wafer
- oxide layer
- silicon carbide
- film
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 73
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 239000007792 gaseous phase Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510041144.6A CN104576325B (zh) | 2015-01-27 | 2015-01-27 | 一种制作碳化硅sbd器件的方法及其正面保护方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510041144.6A CN104576325B (zh) | 2015-01-27 | 2015-01-27 | 一种制作碳化硅sbd器件的方法及其正面保护方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104576325A true CN104576325A (zh) | 2015-04-29 |
CN104576325B CN104576325B (zh) | 2017-07-21 |
Family
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Family Applications (1)
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CN201510041144.6A Active CN104576325B (zh) | 2015-01-27 | 2015-01-27 | 一种制作碳化硅sbd器件的方法及其正面保护方法 |
Country Status (1)
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CN (1) | CN104576325B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946215A (zh) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | 晶圆翘曲状态调整方法 |
CN109830456A (zh) * | 2018-12-25 | 2019-05-31 | 厦门市三安集成电路有限公司 | 功率器件的背面金属加厚的方法和功率器件的制备方法 |
WO2023000472A1 (zh) * | 2021-07-22 | 2023-01-26 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1938857A (zh) * | 2004-03-26 | 2007-03-28 | 财团法人电力中央研究所 | 肖特基结合型半导体装置的制造方法 |
CN101000936A (zh) * | 2006-12-23 | 2007-07-18 | 厦门大学 | δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法 |
US20070222023A1 (en) * | 2006-03-14 | 2007-09-27 | Infineon Technologies Austria Ag | Integrated circuit having a semiconductor arrangement and method for producing it |
-
2015
- 2015-01-27 CN CN201510041144.6A patent/CN104576325B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1938857A (zh) * | 2004-03-26 | 2007-03-28 | 财团法人电力中央研究所 | 肖特基结合型半导体装置的制造方法 |
US20070222023A1 (en) * | 2006-03-14 | 2007-09-27 | Infineon Technologies Austria Ag | Integrated circuit having a semiconductor arrangement and method for producing it |
CN101000936A (zh) * | 2006-12-23 | 2007-07-18 | 厦门大学 | δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107946215A (zh) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | 晶圆翘曲状态调整方法 |
CN109830456A (zh) * | 2018-12-25 | 2019-05-31 | 厦门市三安集成电路有限公司 | 功率器件的背面金属加厚的方法和功率器件的制备方法 |
WO2023000472A1 (zh) * | 2021-07-22 | 2023-01-26 | 长鑫存储技术有限公司 | 半导体结构及半导体结构的制造方法 |
Also Published As
Publication number | Publication date |
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CN104576325B (zh) | 2017-07-21 |
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Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20201012 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |