JP2005514785A - ドーピング源でもあるエッチャントガスを用いてトレンチをエッチングすることで形成されるドープカラムを含む電圧維持領域を有する高電圧電力mosfet - Google Patents
ドーピング源でもあるエッチャントガスを用いてトレンチをエッチングすることで形成されるドープカラムを含む電圧維持領域を有する高電圧電力mosfet Download PDFInfo
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Abstract
【解決手段】電力半導体装置の製造方法は、第1の導電型の基板2を設け、基板上に電圧維持領域を形成することから始められる。電圧維持領域は、第1の導電型のエピタキシャル層1を基板上に堆積し、少なくとも1つのトレンチ520をエピタキシャル層に形成することで形成される。第2の導電型のドーパントを有する少なくとも1つのドープカラム512は、トレンチの側壁に隣接するエピタキシャル層に位置される。トレンチは、ドープカラムを形成するためのドーパント源としても機能するエッチャントガスを用いてエッチングされる。例えば、ホウ素のようなp型ドーパントが望まれる場合、エッチャントガスとしてBCl3が使用されてもよい。あるいは、リンのようなn型ドーパントが必要な場合、エッチャントガスとしてPH3が使用されてもよい。ガス中に存在するドーパントは、トレンチの表面を画定するシリコン中に組み込まれる。ドーパントは、その後拡散され、トレンチを囲うドープカラムが形成される。トレンチは、二酸化珪素、窒化珪素、ポリシリコン、または、これら材料の組み合わせのような絶縁材料で充填される。トレンチを充填する工程は、ドープカラムを形成するようドーパントが拡散される前または後に実施され得る。最後に、第2の導電型の少なくとも1つの領域が接合を間に画定するよう電圧維持領域上に形成される。
Description
本発明によれば、電力半導体装置を製造する方法が提供される。本方法は、第1の導電型の基板を設け、基板上に電圧維持領域を形成することから始められる。電圧維持領域は、第1の導電型のエピタキシャル層を基板上に堆積し、少なくとも1つのトレンチをエピタキシャル層に形成することで形成される。第2の導電型のドーパントを有する少なくとも1つのドープカラムは、トレンチの側壁に隣接するエピタキシャル層に位置される。トレンチは、ドープカラムを形成するためのドーパント源としても機能するエッチャントガスを用いてエッチングされる。例えば、ホウ素のようなp型ドーパントが望まれる場合、エッチャントガスとしてBCl3が使用されてもよい。あるいは、リンのようなn型ドーパントが必要な場合、エッチャントガスとしてPH3が使用されてもよい。ガス中に存在するドーパントは、トレンチの表面を画定するシリコン中に組み込まれる。ドーパントは、その後拡散され、トレンチを囲うドープカラムが形成される。トレンチは、二酸化珪素、窒化珪素、ポリシリコン、または、これら材料の組み合わせのような絶縁材料で充填される。トレンチを充填する工程は、ドープカラムを形成するようドーパントが拡散される前または後に実施され得る。最後に、第2の導電型の少なくとも1つの領域が接合を間に画成するよう電圧維持領域に亘って形成される。
Claims (32)
- 電力半導体装置を形成する方法であって、
A.第1又は第2の導電型の基板を用意する工程と;
B.
1.前記基板上に前記第1の導電型を有するエピタキシャル層を堆積し、
2.前記第2の導電型のドーパント種を有するエッチャントガスで前記エピタキシャル層中に少なくとも1つのトレンチをエッチングし、トレンチの壁を画定する前記エピタキシャル層の部分にドープ表面層を形成し、
3.前記ドープ表面層に位置する前記ドーパント種を前記エピタキシャル層中に更に拡散し、前記トレンチに隣接して前記エピタキシャル層にドープエピタキシャル領域を形成し、
4.前記トレンチに充填材料を堆積して前記トレンチを実質的に充填する、
工程によって前記基板上に電圧維持領域を形成する工程と;
C.接合を間に画成するように前記電圧維持領域上に前記第2の導電型の少なくとも1つの領域を形成する工程と;
を備える方法。 - 前記充填材料を堆積する工程は、前記ドーパント種を拡散する工程の前に行われる、請求項1記載の方法。
- 前記充填材料を堆積する工程は、前記ドーパント種を拡散する工程の後に行われる、請求項1記載の方法。
- 前記工程Cは、
ゲート誘電体領域の上にゲートコンダクタを形成する工程と、
ドリフト領域を間に画定するよう前記エピタキシャル層に第2の導電型を有する第1および第2のボディ領域を形成する工程と、
前記第1および前記第2のボディ領域それぞれに前記第1の導電型の第1および第2のソース領域を形成する工程を更に備える請求項1記載の方法。 - 前記トレンチを充填する材料はノンドープのポリシリコンである、請求項1記載の方法。
- 前記トレンチを充填する材料は誘電体材料である、請求項1記載の方法。
- 前記誘電体材料は二酸化珪素である、請求項6記載の方法。
- 前記誘電体材料は窒化珪素である、請求項6記載の方法。
- 前記ドーパント種はホウ素である、請求項1記載の方法。
- 前記エッチャントガスはBCl3である、請求項9記載の方法。
- 前記ドーパント種はリンである、請求項1記載の方法。
- 前記エッチャントガスはPH3である、請求項11記載の方法。
- 前記ボディ領域は深いボディ領域を含む、請求項4記載の方法。
- 前記トレンチは、少なくとも1つのトレンチを画定するマスキング層を設け、前記マスキング層によって画定される前記トレンチをエッチングすることで形成される、請求項1記載の方法。
- 前記エッチング工程は、反応性イオンエッチングによって行われる、請求項1記載の方法。
- 前記ボディ領域は前記基板にドーパントを注入し拡散することで形成される、請求項4記載の方法。
- 前記電力半導体装置は、縦型DMOS、V溝DMOSおよびトレンチDMOS MOSFET、IGBT、および、バイポーラトランジスタからなる群から選択される、請求項1記載の方法。
- 請求項1記載の方法により形成される電力半導体装置。
- 請求項4記載の方法により形成される電力半導体装置。
- 請求項17記載の方法により形成される電力半導体装置。
- 第1または第2の導電型の基板と;
前記基板上に位置する電圧維持領域とを備え、
前記電圧維持領域は、
第1の導電型を有するエピタキシャル層と;
前記エピタキシャル層に位置する少なくとも1つのトレンチと;
第2の導電型のドーパントを有し、前記カラムが前記トレンチを形成するために用いられたエッチャントガスによって前記トレンチの表面に導入されるドーパントから形成され、前記エピタキシャル層中に拡散される少なくとも1つのドープカラムと;
前記トレンチを実質的に充填する充填材料と;
接合を間に画定するよう前記電圧維持領域上に配置される前記第2の導電型の少なくとも1つの領域と;
を含む電力半導体装置。 - 前記少なくとも1つの領域は、更に、
ゲート誘電体および前記ゲート誘電体の上に配置されるゲートコンダクタと;
ドリフト領域を間に画定するよう前記エピタキシャル層に位置する第2の導電型の第1および第2のボディ領域と;
前記第1および第2のボディ領域にそれぞれ位置する前記第1の導電型の第1および第2のソース領域と;
を含む請求項21記載の装置。 - 前記トレンチを充填する前記材料は、ノンドープのポリシリコンである、請求項21記載の装置。
- 前記トレンチを充填する前記材料は誘電体材料である、請求項21記載の装置。
- 前記誘電体材料は二酸化珪素である、請求項24記載の装置。
- 前記誘電体材料は窒化珪素である、請求項24記載の装置。
- 前記ドーパントはホウ素である、請求項21記載の装置。
- 前記エッチャントガスはBCl3である、請求項27記載の装置。
- 前記ドーパントはリンである、請求項21記載の装置。
- 前記エッチャントガスはPH3である、請求項29記載の装置。
- 前記ボディ領域は深いボディ領域を含む、請求項22記載の装置。
- 前記電力半導体装置は、縦型DMOS、V溝DMOSおよびトレンチDMOS MOSFET、IGBT、および、バイポーラトランジスタからなる群から選択される、請求項21記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/039,284 US6750104B2 (en) | 2001-12-31 | 2001-12-31 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
PCT/US2002/041797 WO2003058682A2 (en) | 2001-12-31 | 2002-12-30 | A METHOD FOR FORMING A POWER SEMICONDUCTOR AS IN FIGURE 5 HAVING A SUBSTRATE (2), A VOLTAGE SUSTAINING EPITAXIAL LAYER (1) WITH AT LEAST A TRENCH (52), A DOPED REGION (5a) ADJACENT AND SURROUNDING THE TRENCH. |
Publications (1)
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JP2005514785A true JP2005514785A (ja) | 2005-05-19 |
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JP2003558901A Pending JP2005514785A (ja) | 2001-12-31 | 2002-12-30 | ドーピング源でもあるエッチャントガスを用いてトレンチをエッチングすることで形成されるドープカラムを含む電圧維持領域を有する高電圧電力mosfet |
Country Status (8)
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US (2) | US6750104B2 (ja) |
EP (1) | EP1468453A4 (ja) |
JP (1) | JP2005514785A (ja) |
KR (1) | KR20040066202A (ja) |
CN (1) | CN100409452C (ja) |
AU (1) | AU2002367408A1 (ja) |
TW (1) | TWI284925B (ja) |
WO (1) | WO2003058682A2 (ja) |
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US20030151092A1 (en) * | 2002-02-11 | 2003-08-14 | Feng-Tso Chien | Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manafacturing the same |
US6686244B2 (en) * | 2002-03-21 | 2004-02-03 | General Semiconductor, Inc. | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step |
US7087472B2 (en) * | 2003-07-18 | 2006-08-08 | Semiconductor Components Industries, L.L.C. | Method of making a vertical compound semiconductor field effect transistor device |
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US20060255401A1 (en) * | 2005-05-11 | 2006-11-16 | Yang Robert K | Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures |
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US20090166722A1 (en) * | 2007-12-28 | 2009-07-02 | Alpha & Omega Semiconductor, Ltd: | High voltage structures and methods for vertical power devices with improved manufacturability |
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US9112022B2 (en) | 2013-07-31 | 2015-08-18 | Infineon Technologies Austria Ag | Super junction structure having a thickness of first and second semiconductor regions which gradually changes from a transistor area into a termination area |
CN104716044B (zh) * | 2014-12-19 | 2018-09-18 | 成都士兰半导体制造有限公司 | 半导体器件及其形成方法 |
CN104779295B (zh) * | 2015-04-24 | 2018-11-06 | 无锡同方微电子有限公司 | 一种半超结mosfet结构及其制作方法 |
TWI632622B (zh) * | 2017-10-26 | 2018-08-11 | 立錡科技股份有限公司 | 高壓金屬氧化物半導體元件及其製造方法 |
US11569345B2 (en) * | 2020-11-23 | 2023-01-31 | Alpha And Omega Semiconductor (Cayman) Ltd. | Gas dopant doped deep trench super junction high voltage MOSFET |
CN113394298B (zh) * | 2021-06-23 | 2023-06-16 | 电子科技大学 | 一种超低比导通电阻的ldmos器件及其制造方法 |
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Publication number | Publication date |
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CN1610975A (zh) | 2005-04-27 |
AU2002367408A1 (en) | 2003-07-24 |
TW200304170A (en) | 2003-09-16 |
US6750104B2 (en) | 2004-06-15 |
US20040164348A1 (en) | 2004-08-26 |
CN100409452C (zh) | 2008-08-06 |
EP1468453A4 (en) | 2008-12-10 |
US20030122189A1 (en) | 2003-07-03 |
AU2002367408A8 (en) | 2003-07-24 |
US7019360B2 (en) | 2006-03-28 |
WO2003058682A3 (en) | 2003-12-18 |
KR20040066202A (ko) | 2004-07-23 |
TWI284925B (en) | 2007-08-01 |
EP1468453A2 (en) | 2004-10-20 |
WO2003058682A2 (en) | 2003-07-17 |
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