JP2005514659A5 - - Google Patents
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- Publication number
- JP2005514659A5 JP2005514659A5 JP2003558598A JP2003558598A JP2005514659A5 JP 2005514659 A5 JP2005514659 A5 JP 2005514659A5 JP 2003558598 A JP2003558598 A JP 2003558598A JP 2003558598 A JP2003558598 A JP 2003558598A JP 2005514659 A5 JP2005514659 A5 JP 2005514659A5
- Authority
- JP
- Japan
- Prior art keywords
- polymers
- photoresist
- photoresists
- polymer
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 229920000642 polymer Polymers 0.000 description 13
- 125000003118 aryl group Chemical group 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- -1 alicyclic hydrocarbons Chemical class 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 229920002313 fluoropolymer Polymers 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920006109 alicyclic polymer Polymers 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 239000005076 polymer ester Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/042,531 US6800416B2 (en) | 2002-01-09 | 2002-01-09 | Negative deep ultraviolet photoresist |
| PCT/EP2003/000021 WO2003058347A1 (en) | 2002-01-09 | 2003-01-03 | Negative deep ultraviolet photoresist |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005514659A JP2005514659A (ja) | 2005-05-19 |
| JP2005514659A5 true JP2005514659A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2006-01-19 |
| JP4299670B2 JP4299670B2 (ja) | 2009-07-22 |
Family
ID=21922426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003558598A Expired - Fee Related JP4299670B2 (ja) | 2002-01-09 | 2003-01-03 | ネガ型深紫外線フォトレジスト |
Country Status (8)
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003007080A1 (en) * | 2001-07-12 | 2003-01-23 | Semiconductor Leading Edge Technologies, Inc. | Method for forming fine pattern |
| JP4216494B2 (ja) * | 2001-09-21 | 2009-01-28 | 富士フイルム株式会社 | 平版印刷版原版 |
| KR100486245B1 (ko) * | 2001-12-19 | 2005-05-03 | 삼성전자주식회사 | 하이드레이트 구조를 가지는 플루오르 함유 감광성 폴리머및 이를 포함하는 레지스트 조성물 |
| CN1639640A (zh) * | 2002-03-01 | 2005-07-13 | E·I·内穆尔杜邦公司 | 用于显微平版印刷的氟化共聚物 |
| TWI314247B (en) * | 2002-03-04 | 2009-09-01 | Shipley Co Llc | Megative photordsists for short wavelength imaging |
| TW523807B (en) * | 2002-03-21 | 2003-03-11 | Nanya Technology Corp | Method for improving photolithography pattern profile |
| US20040134775A1 (en) * | 2002-07-24 | 2004-07-15 | Applied Materials, Inc. | Electrochemical processing cell |
| US6872504B2 (en) * | 2002-12-10 | 2005-03-29 | Massachusetts Institute Of Technology | High sensitivity X-ray photoresist |
| KR100561842B1 (ko) * | 2003-08-25 | 2006-03-16 | 삼성전자주식회사 | 단량체 광산발생제 조성물, 상기 조성물로 코팅된 기판,상기 단량체 광산발생제 조성물을 이용하여 기판상에서화합물을 합성하는 방법 및 상기 방법에 의하여 제조된마이크로어레이 |
| US20050079454A1 (en) * | 2003-10-14 | 2005-04-14 | Best Leroy E. | Contrast enhancement materials containing non-PFOS surfactants |
| JP4235810B2 (ja) * | 2003-10-23 | 2009-03-11 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| JP4448705B2 (ja) * | 2004-02-05 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| GB0420702D0 (en) * | 2004-09-17 | 2004-10-20 | Univ Birmingham | Use of methanofullerene derivatives as resist materials and method for forming a resist layer |
| JP4205061B2 (ja) * | 2005-01-12 | 2009-01-07 | 東京応化工業株式会社 | ネガ型レジスト組成物およびレジストパターン形成方法 |
| TWI347492B (en) * | 2005-10-03 | 2011-08-21 | Rohm & Haas Elect Mat | Compositions and processes for photolithography |
| US7727705B2 (en) * | 2007-02-23 | 2010-06-01 | Fujifilm Electronic Materials, U.S.A., Inc. | High etch resistant underlayer compositions for multilayer lithographic processes |
| JP5130019B2 (ja) * | 2007-10-30 | 2013-01-30 | 東京応化工業株式会社 | ネガ型レジスト組成物及びレジストパターン形成方法 |
| JP5691585B2 (ja) | 2010-02-16 | 2015-04-01 | 住友化学株式会社 | レジスト組成物 |
| KR101498664B1 (ko) | 2010-05-04 | 2015-03-05 | 주식회사 엘지화학 | 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법 |
| US9223214B2 (en) * | 2012-11-19 | 2015-12-29 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
| US8822130B2 (en) * | 2012-11-19 | 2014-09-02 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
| US10078261B2 (en) | 2013-09-06 | 2018-09-18 | Rohm And Haas Electronic Materials Llc | Self-assembled structures, method of manufacture thereof and articles comprising the same |
| CN106125510B (zh) * | 2016-08-30 | 2020-09-22 | Tcl科技集团股份有限公司 | 一种负性光阻薄膜及其制备方法与应用 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2913058C3 (de) | 1979-03-31 | 1981-10-15 | Ihle Ingenieurgesellschaft mbH, 4000 Düsseldorf | Vorrichtung zur Messung des Feststoffgehaltes einer Flüssigkeit |
| KR850001705B1 (ko) | 1981-06-10 | 1985-11-26 | 야마시다 도시히꼬 | 재봉틀 속도 설정장치 |
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Ｊｓｒ株式会社 | ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物 |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| KR100265597B1 (ko) | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
| DE19755131C2 (de) * | 1997-12-11 | 2002-10-31 | Infineon Technologies Ag | Lösung von Tetramethylammoniumhydroxid in Wasser und Verfahren zur Herstellung der Lösung |
| JP4327360B2 (ja) * | 1998-09-23 | 2009-09-09 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | ホトレジスト、ポリマーおよびマイクロリソグラフィの方法 |
| JP4402304B2 (ja) | 1999-05-04 | 2010-01-20 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | フッ素化ポリマー、フォトレジストおよびミクロリソグラフィーのための方法 |
| JP4790153B2 (ja) * | 2000-09-01 | 2011-10-12 | 富士通株式会社 | ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法 |
| US6548219B2 (en) * | 2001-01-26 | 2003-04-15 | International Business Machines Corporation | Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions |
| US6737215B2 (en) | 2001-05-11 | 2004-05-18 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep ultraviolet lithography |
-
2002
- 2002-01-09 US US10/042,531 patent/US6800416B2/en not_active Expired - Fee Related
- 2002-11-26 TW TW091134308A patent/TW200304582A/zh unknown
-
2003
- 2003-01-03 CN CNB038020661A patent/CN1325995C/zh not_active Expired - Fee Related
- 2003-01-03 EP EP03704351A patent/EP1466215A1/en not_active Withdrawn
- 2003-01-03 WO PCT/EP2003/000021 patent/WO2003058347A1/en active Application Filing
- 2003-01-03 JP JP2003558598A patent/JP4299670B2/ja not_active Expired - Fee Related
- 2003-01-03 KR KR10-2004-7010644A patent/KR20040081447A/ko not_active Ceased
- 2003-01-07 MY MYPI20030049A patent/MY140628A/en unknown
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