JP2005514641A5 - - Google Patents
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- JP2005514641A5 JP2005514641A5 JP2003555276A JP2003555276A JP2005514641A5 JP 2005514641 A5 JP2005514641 A5 JP 2005514641A5 JP 2003555276 A JP2003555276 A JP 2003555276A JP 2003555276 A JP2003555276 A JP 2003555276A JP 2005514641 A5 JP2005514641 A5 JP 2005514641A5
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- Prior art keywords
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- forming
- Prior art date
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/016,273 US6749970B2 (en) | 2001-12-11 | 2001-12-11 | Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions |
| PCT/US2002/041466 WO2003054626A1 (en) | 2001-12-11 | 2002-12-09 | Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009211488A Division JP2009288818A (ja) | 2001-12-11 | 2009-09-14 | 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005514641A JP2005514641A (ja) | 2005-05-19 |
| JP2005514641A5 true JP2005514641A5 (https=) | 2006-08-10 |
Family
ID=21776284
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003555276A Pending JP2005514641A (ja) | 2001-12-11 | 2002-12-09 | 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法 |
| JP2009211488A Pending JP2009288818A (ja) | 2001-12-11 | 2009-09-14 | 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009211488A Pending JP2009288818A (ja) | 2001-12-11 | 2009-09-14 | 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6749970B2 (https=) |
| EP (1) | EP1454190B1 (https=) |
| JP (2) | JP2005514641A (https=) |
| KR (1) | KR100915673B1 (https=) |
| CN (1) | CN1285009C (https=) |
| AU (1) | AU2002359860A1 (https=) |
| DE (1) | DE60226771D1 (https=) |
| TW (1) | TWI281596B (https=) |
| WO (1) | WO2003054626A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6534224B2 (en) * | 2001-01-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Phase shift mask and system and method for making the same |
| US6749971B2 (en) * | 2001-12-11 | 2004-06-15 | Advanced Micro Devices, Inc. | Method of enhancing clear field phase shift masks with chrome border around phase 180 regions |
| SG139530A1 (en) | 2003-01-14 | 2008-02-29 | Asml Masktools Bv | Method of optical proximity correction design for contact hole mask |
| US7247574B2 (en) | 2003-01-14 | 2007-07-24 | Asml Masktools B.V. | Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography |
| US7376930B2 (en) | 2003-06-30 | 2008-05-20 | Asml Masktools B.V. | Method, program product and apparatus for generating assist features utilizing an image field map |
| SG109607A1 (en) | 2003-09-05 | 2005-03-30 | Asml Masktools Bv | Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography |
| JP5121117B2 (ja) | 2003-10-31 | 2013-01-16 | エーエスエムエル マスクツールズ ビー．ブイ． | 強度プロフィールを最適化する方法及びプログラム |
| US7506299B2 (en) | 2003-12-19 | 2009-03-17 | Asml Holding N.V. | Feature optimization using interference mapping lithography |
| KR100552266B1 (ko) | 2003-12-31 | 2006-02-20 | 동부아남반도체 주식회사 | 포토 마스크 |
| US7620930B2 (en) | 2004-08-24 | 2009-11-17 | Asml Masktools B.V. | Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography |
| US7615318B2 (en) * | 2004-10-22 | 2009-11-10 | Freescale Semiconductor Inc. | Printing of design features using alternating PSM technology with double mask exposure strategy |
| KR100809331B1 (ko) * | 2006-08-29 | 2008-03-05 | 삼성전자주식회사 | 마스크 및 그 제조 방법 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3153230B2 (ja) | 1990-09-10 | 2001-04-03 | 株式会社日立製作所 | パタン形成方法 |
| JP3334911B2 (ja) | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
| JP3078163B2 (ja) | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
| US5573890A (en) | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
| US5619059A (en) | 1994-09-28 | 1997-04-08 | National Research Council Of Canada | Color deformable mirror device having optical thin film interference color coatings |
| US5521031A (en) * | 1994-10-20 | 1996-05-28 | At&T Corp. | Pattern delineating apparatus for use in the EUV spectrum |
| US6228539B1 (en) | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5807649A (en) | 1996-10-31 | 1998-09-15 | International Business Machines Corporation | Lithographic patterning method and mask set therefor with light field trim mask |
| US5780187A (en) | 1997-02-26 | 1998-07-14 | Micron Technology, Inc. | Repair of reflective photomask used in semiconductor process |
| US6057063A (en) * | 1997-04-14 | 2000-05-02 | International Business Machines Corporation | Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith |
| US6013399A (en) | 1998-12-04 | 2000-01-11 | Advanced Micro Devices, Inc. | Reworkable EUV mask materials |
| JP3257593B2 (ja) * | 1999-02-05 | 2002-02-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3335138B2 (ja) * | 1999-06-04 | 2002-10-15 | キヤノン株式会社 | 露光方法、露光装置、およびデバイス製造方法 |
| US6335128B1 (en) | 1999-09-28 | 2002-01-01 | Nicolas Bailey Cobb | Method and apparatus for determining phase shifts and trim masks for an integrated circuit |
| US6410193B1 (en) | 1999-12-30 | 2002-06-25 | Intel Corporation | Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength |
| JP2001228599A (ja) * | 2000-02-21 | 2001-08-24 | Matsushita Electric Ind Co Ltd | 補助パターン生成方法および半導体マスクレイアウトパターンの自動生成方法 |
| US6544694B2 (en) * | 2000-03-03 | 2003-04-08 | Koninklijke Philips Electronics N.V. | Method of manufacturing a device by means of a mask phase-shifting mask for use in said method |
| US6534224B2 (en) | 2001-01-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Phase shift mask and system and method for making the same |
-
2001
- 2001-12-11 US US10/016,273 patent/US6749970B2/en not_active Expired - Fee Related
-
2002
- 2002-12-09 CN CNB028247736A patent/CN1285009C/zh not_active Expired - Fee Related
- 2002-12-09 EP EP02794426A patent/EP1454190B1/en not_active Expired - Lifetime
- 2002-12-09 WO PCT/US2002/041466 patent/WO2003054626A1/en not_active Ceased
- 2002-12-09 KR KR1020047009145A patent/KR100915673B1/ko not_active Expired - Fee Related
- 2002-12-09 JP JP2003555276A patent/JP2005514641A/ja active Pending
- 2002-12-09 AU AU2002359860A patent/AU2002359860A1/en not_active Abandoned
- 2002-12-09 DE DE60226771T patent/DE60226771D1/de not_active Expired - Lifetime
- 2002-12-11 TW TW091135778A patent/TWI281596B/zh not_active IP Right Cessation
-
2009
- 2009-09-14 JP JP2009211488A patent/JP2009288818A/ja active Pending
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