JP2005514641A - 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法 - Google Patents

位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法 Download PDF

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Publication number
JP2005514641A
JP2005514641A JP2003555276A JP2003555276A JP2005514641A JP 2005514641 A JP2005514641 A JP 2005514641A JP 2003555276 A JP2003555276 A JP 2003555276A JP 2003555276 A JP2003555276 A JP 2003555276A JP 2005514641 A JP2005514641 A JP 2005514641A
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region
phase
edge
mask
boundary
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JP2003555276A
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Japanese (ja)
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JP2005514641A5 (https=
Inventor
ピー． ルーカンク トッド
エイ． スペンス クリストファー
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of JP2005514641A publication Critical patent/JP2005514641A/ja
Publication of JP2005514641A5 publication Critical patent/JP2005514641A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2003555276A 2001-12-11 2002-12-09 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法 Pending JP2005514641A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/016,273 US6749970B2 (en) 2001-12-11 2001-12-11 Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions
PCT/US2002/041466 WO2003054626A1 (en) 2001-12-11 2002-12-09 Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009211488A Division JP2009288818A (ja) 2001-12-11 2009-09-14 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法

Publications (2)

Publication Number Publication Date
JP2005514641A true JP2005514641A (ja) 2005-05-19
JP2005514641A5 JP2005514641A5 (https=) 2006-08-10

Family

ID=21776284

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2003555276A Pending JP2005514641A (ja) 2001-12-11 2002-12-09 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法
JP2009211488A Pending JP2009288818A (ja) 2001-12-11 2009-09-14 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009211488A Pending JP2009288818A (ja) 2001-12-11 2009-09-14 位相０領域及び位相１８０領域の周辺の境界領域を用いてポジ型（ＣＦ：ｃｌｅａｒｆｉｅｌｄ）位相シフトマスク（不透明な開口を有する透明な位相シフトマスク）の向上を図る方法

Country Status (9)

Country Link
US (1) US6749970B2 (https=)
EP (1) EP1454190B1 (https=)
JP (2) JP2005514641A (https=)
KR (1) KR100915673B1 (https=)
CN (1) CN1285009C (https=)
AU (1) AU2002359860A1 (https=)
DE (1) DE60226771D1 (https=)
TW (1) TWI281596B (https=)
WO (1) WO2003054626A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534224B2 (en) * 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same
US6749971B2 (en) * 2001-12-11 2004-06-15 Advanced Micro Devices, Inc. Method of enhancing clear field phase shift masks with chrome border around phase 180 regions
SG139530A1 (en) 2003-01-14 2008-02-29 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
US7247574B2 (en) 2003-01-14 2007-07-24 Asml Masktools B.V. Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
US7376930B2 (en) 2003-06-30 2008-05-20 Asml Masktools B.V. Method, program product and apparatus for generating assist features utilizing an image field map
SG109607A1 (en) 2003-09-05 2005-03-30 Asml Masktools Bv Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
JP5121117B2 (ja) 2003-10-31 2013-01-16 エーエスエムエル マスクツールズ ビー．ブイ． 強度プロフィールを最適化する方法及びプログラム
US7506299B2 (en) 2003-12-19 2009-03-17 Asml Holding N.V. Feature optimization using interference mapping lithography
KR100552266B1 (ko) 2003-12-31 2006-02-20 동부아남반도체 주식회사 포토 마스크
US7620930B2 (en) 2004-08-24 2009-11-17 Asml Masktools B.V. Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
US7615318B2 (en) * 2004-10-22 2009-11-10 Freescale Semiconductor Inc. Printing of design features using alternating PSM technology with double mask exposure strategy
KR100809331B1 (ko) * 2006-08-29 2008-03-05 삼성전자주식회사 마스크 및 그 제조 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5619059A (en) 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5780187A (en) 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
JP3257593B2 (ja) * 1999-02-05 2002-02-18 日本電気株式会社 半導体装置の製造方法
JP3335138B2 (ja) * 1999-06-04 2002-10-15 キヤノン株式会社 露光方法、露光装置、およびデバイス製造方法
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
JP2001228599A (ja) * 2000-02-21 2001-08-24 Matsushita Electric Ind Co Ltd 補助パターン生成方法および半導体マスクレイアウトパターンの自動生成方法
US6544694B2 (en) * 2000-03-03 2003-04-08 Koninklijke Philips Electronics N.V. Method of manufacturing a device by means of a mask phase-shifting mask for use in said method
US6534224B2 (en) 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same

Also Published As

Publication number Publication date
EP1454190A1 (en) 2004-09-08
DE60226771D1 (de) 2008-07-03
CN1285009C (zh) 2006-11-15
AU2002359860A1 (en) 2003-07-09
JP2009288818A (ja) 2009-12-10
TWI281596B (en) 2007-05-21
TW200301399A (en) 2003-07-01
CN1602448A (zh) 2005-03-30
US6749970B2 (en) 2004-06-15
KR100915673B1 (ko) 2009-09-04
KR20040074081A (ko) 2004-08-21
WO2003054626A1 (en) 2003-07-03
US20040009407A1 (en) 2004-01-15
EP1454190B1 (en) 2008-05-21

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