KR100915673B1 - 위상 ０ 및 위상 １８０ 영역 주변으로 경계 영역을 갖는클리어 필드 위상반전마스크 개선 방법 - Google Patents

위상 ０ 및 위상 １８０ 영역 주변으로 경계 영역을 갖는클리어 필드 위상반전마스크 개선 방법

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Publication number
KR100915673B1
KR100915673B1 KR1020047009145A KR20047009145A KR100915673B1 KR 100915673 B1 KR100915673 B1 KR 100915673B1 KR 1020047009145 A KR1020047009145 A KR 1020047009145A KR 20047009145 A KR20047009145 A KR 20047009145A KR 100915673 B1 KR100915673 B1 KR 100915673B1
Authority
KR
South Korea
Prior art keywords
phase
region
edge
boundary
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020047009145A
Other languages
English (en)
Korean (ko)
Other versions
KR20040074081A (ko
Inventor
루캉크토드피.
스펜스크리스토퍼에이.
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20040074081A publication Critical patent/KR20040074081A/ko
Application granted granted Critical
Publication of KR100915673B1 publication Critical patent/KR100915673B1/ko
Assigned to 글로벌파운드리즈 인크. reassignment 글로벌파운드리즈 인크. 권리의 전부이전등록 Assignors: 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020047009145A 2001-12-11 2002-12-09 위상 ０ 및 위상 １８０ 영역 주변으로 경계 영역을 갖는클리어 필드 위상반전마스크 개선 방법 Expired - Fee Related KR100915673B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/016,273 2001-12-11
US10/016,273 US6749970B2 (en) 2001-12-11 2001-12-11 Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions
PCT/US2002/041466 WO2003054626A1 (en) 2001-12-11 2002-12-09 Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions

Publications (2)

Publication Number Publication Date
KR20040074081A KR20040074081A (ko) 2004-08-21
KR100915673B1 true KR100915673B1 (ko) 2009-09-04

Family

ID=21776284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047009145A Expired - Fee Related KR100915673B1 (ko) 2001-12-11 2002-12-09 위상 ０ 및 위상 １８０ 영역 주변으로 경계 영역을 갖는클리어 필드 위상반전마스크 개선 방법

Country Status (9)

Country Link
US (1) US6749970B2 (https=)
EP (1) EP1454190B1 (https=)
JP (2) JP2005514641A (https=)
KR (1) KR100915673B1 (https=)
CN (1) CN1285009C (https=)
AU (1) AU2002359860A1 (https=)
DE (1) DE60226771D1 (https=)
TW (1) TWI281596B (https=)
WO (1) WO2003054626A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534224B2 (en) * 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same
US6749971B2 (en) * 2001-12-11 2004-06-15 Advanced Micro Devices, Inc. Method of enhancing clear field phase shift masks with chrome border around phase 180 regions
SG139530A1 (en) 2003-01-14 2008-02-29 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
US7247574B2 (en) 2003-01-14 2007-07-24 Asml Masktools B.V. Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
US7376930B2 (en) 2003-06-30 2008-05-20 Asml Masktools B.V. Method, program product and apparatus for generating assist features utilizing an image field map
SG109607A1 (en) 2003-09-05 2005-03-30 Asml Masktools Bv Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
JP5121117B2 (ja) 2003-10-31 2013-01-16 エーエスエムエル マスクツールズ ビー．ブイ． 強度プロフィールを最適化する方法及びプログラム
US7506299B2 (en) 2003-12-19 2009-03-17 Asml Holding N.V. Feature optimization using interference mapping lithography
KR100552266B1 (ko) 2003-12-31 2006-02-20 동부아남반도체 주식회사 포토 마스크
US7620930B2 (en) 2004-08-24 2009-11-17 Asml Masktools B.V. Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
US7615318B2 (en) * 2004-10-22 2009-11-10 Freescale Semiconductor Inc. Printing of design features using alternating PSM technology with double mask exposure strategy
KR100809331B1 (ko) * 2006-08-29 2008-03-05 삼성전자주식회사 마스크 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000057910A (ko) * 1999-02-05 2000-09-25 가네코 히사시 반도체 장치의 제조방법
JP2000349010A (ja) * 1999-06-04 2000-12-15 Canon Inc 露光方法、露光装置、およびデバイス製造方法
JP2001228599A (ja) * 2000-02-21 2001-08-24 Matsushita Electric Ind Co Ltd 補助パターン生成方法および半導体マスクレイアウトパターンの自動生成方法

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5619059A (en) 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5521031A (en) * 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5780187A (en) 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6335128B1 (en) 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
US6544694B2 (en) * 2000-03-03 2003-04-08 Koninklijke Philips Electronics N.V. Method of manufacturing a device by means of a mask phase-shifting mask for use in said method
US6534224B2 (en) 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000057910A (ko) * 1999-02-05 2000-09-25 가네코 히사시 반도체 장치의 제조방법
JP2000349010A (ja) * 1999-06-04 2000-12-15 Canon Inc 露光方法、露光装置、およびデバイス製造方法
JP2001228599A (ja) * 2000-02-21 2001-08-24 Matsushita Electric Ind Co Ltd 補助パターン生成方法および半導体マスクレイアウトパターンの自動生成方法

Also Published As

Publication number Publication date
EP1454190A1 (en) 2004-09-08
DE60226771D1 (de) 2008-07-03
CN1285009C (zh) 2006-11-15
AU2002359860A1 (en) 2003-07-09
JP2009288818A (ja) 2009-12-10
TWI281596B (en) 2007-05-21
TW200301399A (en) 2003-07-01
JP2005514641A (ja) 2005-05-19
CN1602448A (zh) 2005-03-30
US6749970B2 (en) 2004-06-15
KR20040074081A (ko) 2004-08-21
WO2003054626A1 (en) 2003-07-03
US20040009407A1 (en) 2004-01-15
EP1454190B1 (en) 2008-05-21

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