JP2005518569A - 全位相マスクおよびトリムマスクを用いた微小寸法制御 - Google Patents
全位相マスクおよびトリムマスクを用いた微小寸法制御 Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Bidet-Like Cleaning Device And Other Flush Toilet Accessories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Soundproofing, Sound Blocking, And Sound Damping (AREA)
- Control Of High-Frequency Heating Circuits (AREA)
Abstract
【解決手段】使用輻射線波長以下の微小寸法の特徴形状をウェーハ上に結像するために全位相位相シフトマスク(FPSM)およびそれと対応のトリムマスクを含むマスクセットを用いる。FPSMへの位相割当てにより、とくに非微小寸法領域で特徴形状の一部をトリムマスクで画定できる。しかし、この特徴形状の部分画定は、非微小寸法領域で微小寸法(CD)の大幅な変動を生ずる原因になり得る。このような望ましくない微小寸法(CD)の変動は、マスク目合せずれが大きい場合でも、T字交叉部や腕状部や、それ以外の交叉ライン部などの非微小寸法領域でトリムマスクによる特徴形状複数端部の画定を行うことにより、よりよく抑制することができる。
Description
101,104 0度位相シフタ
102,103 180度位相シフタ
110 トリムマスクレイアウト
111 切欠部
120 レイアウト画像(シミュレーションによる)
203 ポリシリコンライン
300,600,620 全位相位相シフトマスク(FPSM)レイアウト
301−303,306 切欠部
307−310,603−606,623−626 位相シフタ
320,610,630,350 トリムマスクレイアウト
321−323,611−612,631−632,351−352 切欠部
330,501−504 レイアウト画像(シミュレーションによる)
800,810 微小寸法(CD)制御改良プロセス
801 位相シフト前のレイアウトを受け取る
802 微小寸法端部を画定するFPSMレイアウトを生ずる
803 非微小寸法端部を画定するトリムマスクレイアウトを生ずる
804 マスクセットを作成する
805 FPSMおよびトリムマスクを用いて集積回路層を作成する
811 位相シフト後のレイアウトを受け取る
812 微小寸法端部を画定するようにFPSMレイアウトを変形する
813 非微小寸法端部を画定するようにFPSMレイアウトを変形する
814 マスクセットを作成する
815 FPSMおよびトリムマスクを用いて集積回路層を作成する
Claims (17)
- ウェーハの表面上の材料の層の特徴形状の微小寸法(CD)制御を改良する方法であって、
前記特徴形状の微小寸法端部を、全位相位相シフトマスク(FPSM)、すなわち位相衝突を解消するように互いに隣接する位相シフタの間に設けられ前記FPSMの利用により前記特徴形状を画定する第1の切欠部のセットと、前記第1の切欠部のセットに隣接して設けられトリムマスクの利用により前記第1の切欠部のセットに隣接する端部の画定を可能にする第2の切欠部のセットとを含むFPSMで画定する過程と、
前記第2の切欠部のセットに対応する非微小寸法端部を前記トリムマスクで画定する過程と
を含む方法。 - 前記特徴形状の非微小寸法端部を画定する過程が、前記トリムマスクに第1の切欠部、すなわち少なくとも二つの互いに交叉するラインの第1の角を画定する第1の切欠部を設ける過程を含む請求項1記載の方法。
- 前記特徴形状の非微小寸法端部を画定する過程が、前記トリムマスクに第2の切欠部、すなわち前記互いに交叉するラインの第2の角または前記第1および第2の角の反対側のラインの端の一部を画定する第2の切欠部を設ける過程を含む請求項2記載の方法。
- 前記第1および第2の切欠部を、前記FPSMの前記第1の切欠部および前記第2の切欠部に対応する領域で位相衝突が生ずる場合だけ設ける請求項3記載の方法。
- 全位相位相シフトフォトマスク(FPSM)およびトリムマスク、すなわちFPSMレイアウトを用いて形成したFPSMおよびトリムマスクレイアウトを用いて形成したトリムマスクを露光することにより形成したウェーハの表面上の互いに交叉したラインの微小寸法(CD)制御を改良する方法であって、
前記互いに交叉するラインの第1の角を画定する第1の切欠部を前記トリムマスクレイアウトに設ける過程と、
前記互いに交叉するラインの第2の角を画定する第2の切欠部を前記トリムマスクレイアウトに設ける過程と、
前記第1の切欠部および前記第2の切欠部に対応するシフタ切欠部を前記FPSMレイアウトに設ける過程と
を含む方法。 - 前記互いに交叉するラインがT字交叉部を形成する請求項5記載の方法。
- 前記第1の角および前記第2の角の反対側の端を画定する第3の切欠部を前記トリムマスクレイアウトに設ける過程をさらに含む請求項6記載の方法。
- 前記互いに交叉するラインが腕状部を形成する請求項5記載の方法。
- 前記腕状部の外側の角に対応する前記シフタ切欠部と、前記腕状部の内側の角に対応する前記シフタ切欠部とが互いに目合わせした端部を有する請求項8記載の方法。
- ウェーハの表面上の材料の層のレイアウトのライン相互間の交叉部が目合せずれによる悪影響を受けにくくする方法であって、
前記レイアウトの微小寸法端部を、全位相位相シフトマスク(FPSM)、すなわちこのFPSMを利用した前記レイアウトの画定の際の位相衝突を解消するように互いに隣接する位相シフタの間に設けられた第1の切欠部のセットと、前記第1の切欠部のセットに隣接して設けられトリムマスクの利用により前記第1の切欠部のセットに隣接する端部の画定を可能にする第2の切欠部のセットとを含むFPSMで画定する過程と、
前記第2の切欠部のセットに対応する非微小寸法端部を前記トリムマスクで画定する過程と
を含む方法。 - 非微小寸法端部が、T字交叉部および腕状部の少なくとも一方を含む請求項10記載の方法。
- 前記トリムマスクがダークフィールドトリムマスクである請求項11記載の方法。
- 前記FPSMがFPSMレイアウトを用いて作成したものであり、前記トリムマスクがトリムマスクレイアウトを用いて作成したものであり、前記非微小寸法端部を画定する過程が、
少なくとも二つの互いに交叉するラインの第1の角を画定する第1の切欠部を前記トリムマスクレイアウトに設ける過程と、
前記少なくとも二つの互いに交叉するラインの第2の角、および前記少なくとも二つの互いに交叉するラインの端部であって前記第1の角および第2の角の反対側の端部の一方を画定する第2の切欠部を前記トリムマスクレイアウトに設ける過程と
を含む請求項11記載の方法。 - 前記第1の切欠部および第2の切欠部を設ける過程を、前記FPSMの前記第1の切欠部および第2の切欠部に対応する領域で位相衝突が生じる時だけ行う請求項13記載の方法。
- 微小寸法特徴形状および非微小寸法特徴形状を含むパターンをウェーハに転写するために用いるリソグラフィ用マスクセットであって、
全位相位相シフトマスク(FPSM)の利用によりレイアウトを画定する際の位相衝突を解消するように互いに隣接する位相シフタの間に設けた第1の切欠部のセットと、前記第1の切欠部のセットに隣接して設けた第2の切欠部のセットとを含み、前記パターンの前記微小寸法特徴形状の大部分を画定するFPSMと、
前記第2の切欠部のセットに対応する非微小寸法端部を含む前記パターンの非微小寸法特徴形状の大部分を画定するトリムマスクと
を含むリソグラフィ用マスクセット。 - 前記非微小寸法特徴形状が少なくともT字交叉部および腕状部の一方を含む請求項15記載のリソグラフィ用マスクセット。
- 複数の特徴形状を含む集積回路(IC)レイアウトの少なくとも一部につきコンピュータシステムを用いて前記ICレイアウトのプロセシングを行うコンピュータソフトウェアであって、
前記特徴形状の微小寸法端部を、前記位相シフトマスク(FPSM)、すなわち位相衝突を解消するように互いに隣接する位相シフタの間に設けられ前記FPSMの利用により前記特徴形状を画定する第1の切欠部のセットと、前記第1の切欠部のセットに隣接して設けられトリムマスクの利用により前記第1の切欠部のセットに隣接する端部の画定を可能にする第2の切欠部のセットとを含むFPSMで画定するコードと、
前記第2の切欠部のセットに対応する非微小寸法端部を前記トリムマスクで画定するコードと
を含むコンピュータソフトウェア。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35990902P | 2002-02-26 | 2002-02-26 | |
US10/295,160 US7122281B2 (en) | 2002-02-26 | 2002-11-14 | Critical dimension control using full phase and trim masks |
PCT/US2003/005486 WO2003073166A1 (en) | 2002-02-26 | 2003-02-25 | Critical dimension control using full phase and trim masks |
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JP2005518569A true JP2005518569A (ja) | 2005-06-23 |
JP4494796B2 JP4494796B2 (ja) | 2010-06-30 |
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JP2003571796A Expired - Lifetime JP4494796B2 (ja) | 2002-02-26 | 2003-02-25 | 全位相マスクおよびトリムマスクを用いた微小寸法制御 |
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Country | Link |
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US (1) | US7122281B2 (ja) |
EP (1) | EP1478976B1 (ja) |
JP (1) | JP4494796B2 (ja) |
KR (1) | KR100969430B1 (ja) |
CN (1) | CN100474108C (ja) |
AT (1) | ATE433578T1 (ja) |
AU (1) | AU2003223189A1 (ja) |
DE (1) | DE60327924D1 (ja) |
WO (1) | WO2003073166A1 (ja) |
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EP1478976A1 (en) | 2004-11-24 |
EP1478976B1 (en) | 2009-06-10 |
AU2003223189A1 (en) | 2003-09-09 |
US20030162102A1 (en) | 2003-08-28 |
JP4494796B2 (ja) | 2010-06-30 |
DE60327924D1 (de) | 2009-07-23 |
WO2003073166A1 (en) | 2003-09-04 |
ATE433578T1 (de) | 2009-06-15 |
CN100474108C (zh) | 2009-04-01 |
EP1478976A4 (en) | 2007-06-06 |
CN1653389A (zh) | 2005-08-10 |
KR100969430B1 (ko) | 2010-07-14 |
US7122281B2 (en) | 2006-10-17 |
KR20040089671A (ko) | 2004-10-21 |
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