JP2005513518A5 - - Google Patents
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- JP2005513518A5 JP2005513518A5 JP2003551611A JP2003551611A JP2005513518A5 JP 2005513518 A5 JP2005513518 A5 JP 2005513518A5 JP 2003551611 A JP2003551611 A JP 2003551611A JP 2003551611 A JP2003551611 A JP 2003551611A JP 2005513518 A5 JP2005513518 A5 JP 2005513518A5
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- JP
- Japan
- Prior art keywords
- region
- phase
- boundary
- edge
- phase region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 claims description 29
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 23
- 230000007704 transition Effects 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 230000010363 phase shift Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 238000012937 correction Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 238000005530 etching Methods 0.000 description 6
- 238000007689 inspection Methods 0.000 description 3
- 208000032750 Device leakage Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/016,710 | 2001-12-11 | ||
| US10/016,710 US6749971B2 (en) | 2001-12-11 | 2001-12-11 | Method of enhancing clear field phase shift masks with chrome border around phase 180 regions |
| PCT/US2002/039372 WO2003050616A1 (en) | 2001-12-11 | 2002-12-09 | Method of enhancing phase shift masks |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005513518A JP2005513518A (ja) | 2005-05-12 |
| JP2005513518A5 true JP2005513518A5 (https=) | 2013-01-17 |
| JP5349729B2 JP5349729B2 (ja) | 2013-11-20 |
Family
ID=21778529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003551611A Expired - Lifetime JP5349729B2 (ja) | 2001-12-11 | 2002-12-09 | 位相が１８０°の領域の周りにクロム境界を設けることにより位相シフト・マスクを改善する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6749971B2 (https=) |
| EP (1) | EP1454191B1 (https=) |
| JP (1) | JP5349729B2 (https=) |
| KR (1) | KR100901011B1 (https=) |
| CN (1) | CN1278181C (https=) |
| AU (1) | AU2002360533A1 (https=) |
| DE (1) | DE60226772D1 (https=) |
| TW (1) | TWI265370B (https=) |
| WO (1) | WO2003050616A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1975567A (zh) * | 2002-04-23 | 2007-06-06 | 株式会社液晶先端技术开发中心 | 移相掩模 |
| KR100462887B1 (ko) * | 2002-10-22 | 2004-12-17 | 삼성전자주식회사 | 필드 게이트 이미지의 폭을 보강하는 위상 에지 위상 변이마스크 및 제조방법 |
| US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
| US7608503B2 (en) * | 2004-11-22 | 2009-10-27 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
| US8024889B2 (en) * | 2008-06-25 | 2011-09-27 | Brett Bunker | Pest control method and apparatus |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3153230B2 (ja) | 1990-09-10 | 2001-04-03 | 株式会社日立製作所 | パタン形成方法 |
| JP3334911B2 (ja) | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
| JP3078163B2 (ja) | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
| US5573890A (en) | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
| US5619059A (en) | 1994-09-28 | 1997-04-08 | National Research Council Of Canada | Color deformable mirror device having optical thin film interference color coatings |
| US5521031A (en) | 1994-10-20 | 1996-05-28 | At&T Corp. | Pattern delineating apparatus for use in the EUV spectrum |
| US6228539B1 (en) | 1996-09-18 | 2001-05-08 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
| US5807649A (en) | 1996-10-31 | 1998-09-15 | International Business Machines Corporation | Lithographic patterning method and mask set therefor with light field trim mask |
| US5780187A (en) | 1997-02-26 | 1998-07-14 | Micron Technology, Inc. | Repair of reflective photomask used in semiconductor process |
| US6057063A (en) * | 1997-04-14 | 2000-05-02 | International Business Machines Corporation | Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith |
| US5783337A (en) * | 1997-05-15 | 1998-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border |
| US6013399A (en) | 1998-12-04 | 2000-01-11 | Advanced Micro Devices, Inc. | Reworkable EUV mask materials |
| US6077633A (en) * | 1998-12-14 | 2000-06-20 | Taiwan Semiconductor Manufacturing Company | Mask and method of forming a mask for avoiding side lobe problems in forming contact holes |
| US6410193B1 (en) | 1999-12-30 | 2002-06-25 | Intel Corporation | Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength |
| US6534224B2 (en) | 2001-01-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Phase shift mask and system and method for making the same |
| US6749970B2 (en) * | 2001-12-11 | 2004-06-15 | Advanced Micro Devices, Inc. | Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions |
-
2001
- 2001-12-11 US US10/016,710 patent/US6749971B2/en not_active Expired - Lifetime
-
2002
- 2002-12-09 EP EP02795795A patent/EP1454191B1/en not_active Expired - Lifetime
- 2002-12-09 CN CNB028247833A patent/CN1278181C/zh not_active Expired - Lifetime
- 2002-12-09 KR KR1020047009144A patent/KR100901011B1/ko not_active Expired - Lifetime
- 2002-12-09 AU AU2002360533A patent/AU2002360533A1/en not_active Abandoned
- 2002-12-09 DE DE60226772T patent/DE60226772D1/de not_active Expired - Lifetime
- 2002-12-09 JP JP2003551611A patent/JP5349729B2/ja not_active Expired - Lifetime
- 2002-12-09 WO PCT/US2002/039372 patent/WO2003050616A1/en not_active Ceased
- 2002-12-11 TW TW091135779A patent/TWI265370B/zh not_active IP Right Cessation
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