DE60226772D1 - Verfahren zur verbesserung von phasenverschiebungsmasken - Google Patents

Verfahren zur verbesserung von phasenverschiebungsmasken

Info

Publication number
DE60226772D1
DE60226772D1 DE60226772T DE60226772T DE60226772D1 DE 60226772 D1 DE60226772 D1 DE 60226772D1 DE 60226772 T DE60226772 T DE 60226772T DE 60226772 T DE60226772 T DE 60226772T DE 60226772 D1 DE60226772 D1 DE 60226772D1
Authority
DE
Germany
Prior art keywords
phase shifting
shifting masks
improving phase
improving
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60226772T
Other languages
German (de)
English (en)
Inventor
Todd P Lukanc
Christopher A Spence
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60226772D1 publication Critical patent/DE60226772D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE60226772T 2001-12-11 2002-12-09 Verfahren zur verbesserung von phasenverschiebungsmasken Expired - Lifetime DE60226772D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/016,710 US6749971B2 (en) 2001-12-11 2001-12-11 Method of enhancing clear field phase shift masks with chrome border around phase 180 regions
PCT/US2002/039372 WO2003050616A1 (en) 2001-12-11 2002-12-09 Method of enhancing phase shift masks

Publications (1)

Publication Number Publication Date
DE60226772D1 true DE60226772D1 (de) 2008-07-03

Family

ID=21778529

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60226772T Expired - Lifetime DE60226772D1 (de) 2001-12-11 2002-12-09 Verfahren zur verbesserung von phasenverschiebungsmasken

Country Status (9)

Country Link
US (1) US6749971B2 (https=)
EP (1) EP1454191B1 (https=)
JP (1) JP5349729B2 (https=)
KR (1) KR100901011B1 (https=)
CN (1) CN1278181C (https=)
AU (1) AU2002360533A1 (https=)
DE (1) DE60226772D1 (https=)
TW (1) TWI265370B (https=)
WO (1) WO2003050616A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1975567A (zh) * 2002-04-23 2007-06-06 株式会社液晶先端技术开发中心 移相掩模
KR100462887B1 (ko) * 2002-10-22 2004-12-17 삼성전자주식회사 필드 게이트 이미지의 폭을 보강하는 위상 에지 위상 변이마스크 및 제조방법
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US7608503B2 (en) * 2004-11-22 2009-10-27 Macronix International Co., Ltd. Side wall active pin memory and manufacturing method
US8024889B2 (en) * 2008-06-25 2011-09-27 Brett Bunker Pest control method and apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5619059A (en) 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5521031A (en) 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5780187A (en) 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
US5783337A (en) * 1997-05-15 1998-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6077633A (en) * 1998-12-14 2000-06-20 Taiwan Semiconductor Manufacturing Company Mask and method of forming a mask for avoiding side lobe problems in forming contact holes
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
US6534224B2 (en) 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same
US6749970B2 (en) * 2001-12-11 2004-06-15 Advanced Micro Devices, Inc. Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions

Also Published As

Publication number Publication date
EP1454191B1 (en) 2008-05-21
JP2005513518A (ja) 2005-05-12
EP1454191A1 (en) 2004-09-08
WO2003050616A1 (en) 2003-06-19
KR100901011B1 (ko) 2009-06-04
US20040023123A1 (en) 2004-02-05
CN1602449A (zh) 2005-03-30
CN1278181C (zh) 2006-10-04
KR20040065266A (ko) 2004-07-21
TWI265370B (en) 2006-11-01
TW200300862A (en) 2003-06-16
AU2002360533A1 (en) 2003-06-23
US6749971B2 (en) 2004-06-15
JP5349729B2 (ja) 2013-11-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition