JP5349729B2 - 位相が１８０°の領域の周りにクロム境界を設けることにより位相シフト・マスクを改善する方法 - Google Patents

位相が１８０°の領域の周りにクロム境界を設けることにより位相シフト・マスクを改善する方法 Download PDF

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JP5349729B2
JP5349729B2 JP2003551611A JP2003551611A JP5349729B2 JP 5349729 B2 JP5349729 B2 JP 5349729B2 JP 2003551611 A JP2003551611 A JP 2003551611A JP 2003551611 A JP2003551611 A JP 2003551611A JP 5349729 B2 JP5349729 B2 JP 5349729B2
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Japan
Prior art keywords
phase
region
edge portion
mask
phase shift
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Expired - Lifetime
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JP2003551611A
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Japanese (ja)
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JP2005513518A (ja
JP2005513518A5 (https=
Inventor
ピー． ルーカンク トッド
エイ． スペンス クリストファー
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2003551611A 2001-12-11 2002-12-09 位相が１８０°の領域の周りにクロム境界を設けることにより位相シフト・マスクを改善する方法 Expired - Lifetime JP5349729B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/016,710 2001-12-11
US10/016,710 US6749971B2 (en) 2001-12-11 2001-12-11 Method of enhancing clear field phase shift masks with chrome border around phase 180 regions
PCT/US2002/039372 WO2003050616A1 (en) 2001-12-11 2002-12-09 Method of enhancing phase shift masks

Publications (3)

Publication Number Publication Date
JP2005513518A JP2005513518A (ja) 2005-05-12
JP2005513518A5 JP2005513518A5 (https=) 2013-01-17
JP5349729B2 true JP5349729B2 (ja) 2013-11-20

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ID=21778529

Family Applications (1)

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JP2003551611A Expired - Lifetime JP5349729B2 (ja) 2001-12-11 2002-12-09 位相が１８０°の領域の周りにクロム境界を設けることにより位相シフト・マスクを改善する方法

Country Status (9)

Country Link
US (1) US6749971B2 (https=)
EP (1) EP1454191B1 (https=)
JP (1) JP5349729B2 (https=)
KR (1) KR100901011B1 (https=)
CN (1) CN1278181C (https=)
AU (1) AU2002360533A1 (https=)
DE (1) DE60226772D1 (https=)
TW (1) TWI265370B (https=)
WO (1) WO2003050616A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1975567A (zh) * 2002-04-23 2007-06-06 株式会社液晶先端技术开发中心 移相掩模
KR100462887B1 (ko) * 2002-10-22 2004-12-17 삼성전자주식회사 필드 게이트 이미지의 폭을 보강하는 위상 에지 위상 변이마스크 및 제조방법
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US7608503B2 (en) * 2004-11-22 2009-10-27 Macronix International Co., Ltd. Side wall active pin memory and manufacturing method
US8024889B2 (en) * 2008-06-25 2011-09-27 Brett Bunker Pest control method and apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5619059A (en) 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5521031A (en) 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5780187A (en) 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
US5783337A (en) * 1997-05-15 1998-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6077633A (en) * 1998-12-14 2000-06-20 Taiwan Semiconductor Manufacturing Company Mask and method of forming a mask for avoiding side lobe problems in forming contact holes
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
US6534224B2 (en) 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same
US6749970B2 (en) * 2001-12-11 2004-06-15 Advanced Micro Devices, Inc. Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions

Also Published As

Publication number Publication date
EP1454191B1 (en) 2008-05-21
JP2005513518A (ja) 2005-05-12
EP1454191A1 (en) 2004-09-08
WO2003050616A1 (en) 2003-06-19
KR100901011B1 (ko) 2009-06-04
US20040023123A1 (en) 2004-02-05
CN1602449A (zh) 2005-03-30
DE60226772D1 (de) 2008-07-03
CN1278181C (zh) 2006-10-04
KR20040065266A (ko) 2004-07-21
TWI265370B (en) 2006-11-01
TW200300862A (en) 2003-06-16
AU2002360533A1 (en) 2003-06-23
US6749971B2 (en) 2004-06-15

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