CN1278181C - 增强相位移光罩的方法 - Google Patents

增强相位移光罩的方法 Download PDF

Info

Publication number
CN1278181C
CN1278181C CNB028247833A CN02824783A CN1278181C CN 1278181 C CN1278181 C CN 1278181C CN B028247833 A CNB028247833 A CN B028247833A CN 02824783 A CN02824783 A CN 02824783A CN 1278181 C CN1278181 C CN 1278181C
Authority
CN
China
Prior art keywords
phase
region
edge
chromium
boundary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB028247833A
Other languages
English (en)
Chinese (zh)
Other versions
CN1602449A (zh
Inventor
T·P·卢康科
C·A·斯彭斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of CN1602449A publication Critical patent/CN1602449A/zh
Application granted granted Critical
Publication of CN1278181C publication Critical patent/CN1278181C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB028247833A 2001-12-11 2002-12-09 增强相位移光罩的方法 Expired - Lifetime CN1278181C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/016,710 2001-12-11
US10/016,710 US6749971B2 (en) 2001-12-11 2001-12-11 Method of enhancing clear field phase shift masks with chrome border around phase 180 regions

Publications (2)

Publication Number Publication Date
CN1602449A CN1602449A (zh) 2005-03-30
CN1278181C true CN1278181C (zh) 2006-10-04

Family

ID=21778529

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028247833A Expired - Lifetime CN1278181C (zh) 2001-12-11 2002-12-09 增强相位移光罩的方法

Country Status (9)

Country Link
US (1) US6749971B2 (https=)
EP (1) EP1454191B1 (https=)
JP (1) JP5349729B2 (https=)
KR (1) KR100901011B1 (https=)
CN (1) CN1278181C (https=)
AU (1) AU2002360533A1 (https=)
DE (1) DE60226772D1 (https=)
TW (1) TWI265370B (https=)
WO (1) WO2003050616A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1975567A (zh) * 2002-04-23 2007-06-06 株式会社液晶先端技术开发中心 移相掩模
KR100462887B1 (ko) * 2002-10-22 2004-12-17 삼성전자주식회사 필드 게이트 이미지의 폭을 보강하는 위상 에지 위상 변이마스크 및 제조방법
US7448012B1 (en) 2004-04-21 2008-11-04 Qi-De Qian Methods and system for improving integrated circuit layout
US7608503B2 (en) * 2004-11-22 2009-10-27 Macronix International Co., Ltd. Side wall active pin memory and manufacturing method
US8024889B2 (en) * 2008-06-25 2011-09-27 Brett Bunker Pest control method and apparatus

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3153230B2 (ja) 1990-09-10 2001-04-03 株式会社日立製作所 パタン形成方法
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5573890A (en) 1994-07-18 1996-11-12 Advanced Micro Devices, Inc. Method of optical lithography using phase shift masking
US5619059A (en) 1994-09-28 1997-04-08 National Research Council Of Canada Color deformable mirror device having optical thin film interference color coatings
US5521031A (en) 1994-10-20 1996-05-28 At&T Corp. Pattern delineating apparatus for use in the EUV spectrum
US6228539B1 (en) 1996-09-18 2001-05-08 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5858580A (en) 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US5807649A (en) 1996-10-31 1998-09-15 International Business Machines Corporation Lithographic patterning method and mask set therefor with light field trim mask
US5780187A (en) 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US6057063A (en) * 1997-04-14 2000-05-02 International Business Machines Corporation Phase shifted mask design system, phase shifted mask and VLSI circuit devices manufactured therewith
US5783337A (en) * 1997-05-15 1998-07-21 Taiwan Semiconductor Manufacturing Company, Ltd. Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
US6077633A (en) * 1998-12-14 2000-06-20 Taiwan Semiconductor Manufacturing Company Mask and method of forming a mask for avoiding side lobe problems in forming contact holes
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
US6534224B2 (en) 2001-01-30 2003-03-18 Advanced Micro Devices, Inc. Phase shift mask and system and method for making the same
US6749970B2 (en) * 2001-12-11 2004-06-15 Advanced Micro Devices, Inc. Method of enhancing clear field phase shift masks with border regions around phase 0 and phase 180 regions

Also Published As

Publication number Publication date
EP1454191B1 (en) 2008-05-21
JP2005513518A (ja) 2005-05-12
EP1454191A1 (en) 2004-09-08
WO2003050616A1 (en) 2003-06-19
KR100901011B1 (ko) 2009-06-04
US20040023123A1 (en) 2004-02-05
CN1602449A (zh) 2005-03-30
DE60226772D1 (de) 2008-07-03
KR20040065266A (ko) 2004-07-21
TWI265370B (en) 2006-11-01
TW200300862A (en) 2003-06-16
AU2002360533A1 (en) 2003-06-23
US6749971B2 (en) 2004-06-15
JP5349729B2 (ja) 2013-11-20

Similar Documents

Publication Publication Date Title
GB2302415A (en) Photomask
US7807343B2 (en) EDA methodology for extending ghost feature beyond notched active to improve adjacent gate CD control using a two-print-two-etch approach
US7811720B2 (en) Utilizing compensation features in photolithography for semiconductor device fabrication
CN1285009C (zh) 在0相与180相区域周围形成边界区域以增强透明电场相移位光罩的方法
US6818358B1 (en) Method of extending the areas of clear field phase shift generation
CN1278181C (zh) 增强相位移光罩的方法
US6787272B2 (en) Assist feature for random, isolated, semi-dense, and other non-dense contacts
US7354682B1 (en) Chromeless mask for contact holes
US20090202925A1 (en) Photomask defect correction method, photomask manufacturing method, phase shift mask manufacturing method, photomask, phase shift mask, photomask set, and pattern transfer method
US7033947B2 (en) Dual trench alternating phase shift mask fabrication
US6675369B1 (en) Method of enhancing clear field phase shift masks by adding parallel line to phase 0 region
US7455938B2 (en) Methods of forming patterns in substrates
US6797438B1 (en) Method and enhancing clear field phase shift masks with border around edges of phase regions
US8092958B2 (en) Mask and method for patterning a semiconductor wafer
JP2005513518A5 (https=)
US7445159B2 (en) Dual trench alternating phase shift mask fabrication
KR20060125928A (ko) 리세스 게이트 마스크 패턴 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee
C49 Reinstatement of patent right or utility model
RR01 Reinstatement of patent right
CX01 Expiry of patent term

Granted publication date: 20061004

CX01 Expiry of patent term