JP2005509282A5 - - Google Patents
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- Publication number
- JP2005509282A5 JP2005509282A5 JP2003543032A JP2003543032A JP2005509282A5 JP 2005509282 A5 JP2005509282 A5 JP 2005509282A5 JP 2003543032 A JP2003543032 A JP 2003543032A JP 2003543032 A JP2003543032 A JP 2003543032A JP 2005509282 A5 JP2005509282 A5 JP 2005509282A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrodes
- thin film
- layer
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000010409 thin film Substances 0.000 claims description 142
- 238000000034 method Methods 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 65
- 239000004020 conductor Substances 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 49
- 239000011159 matrix material Substances 0.000 claims description 42
- 230000015654 memory Effects 0.000 claims description 36
- 238000012545 processing Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 30
- 238000000059 patterning Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 238000013500 data storage Methods 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000014509 gene expression Effects 0.000 claims description 2
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 193
- 238000004519 manufacturing process Methods 0.000 description 26
- 238000003860 storage Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20015509A NO20015509D0 (no) | 2001-11-09 | 2001-11-09 | Elektrodeanordning, fremgangsmåte til dets fremstilling, apparat omfattende elektrodeanordningene, samt bruk av sistnevnte |
| PCT/NO2002/000414 WO2003041084A1 (en) | 2001-11-09 | 2002-11-08 | Electrodes, method and apparatus for memory structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005509282A JP2005509282A (ja) | 2005-04-07 |
| JP2005509282A5 true JP2005509282A5 (enExample) | 2006-01-05 |
Family
ID=19913010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003543032A Abandoned JP2005509282A (ja) | 2001-11-09 | 2002-11-08 | メモリ構造体用電極、方法および装置 |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP1446805B8 (enExample) |
| JP (1) | JP2005509282A (enExample) |
| KR (1) | KR100577544B1 (enExample) |
| CN (1) | CN1582481A (enExample) |
| AT (1) | ATE295990T1 (enExample) |
| AU (1) | AU2002339770B2 (enExample) |
| CA (1) | CA2466267C (enExample) |
| DE (1) | DE60204239T2 (enExample) |
| ES (1) | ES2242883T3 (enExample) |
| NO (1) | NO20015509D0 (enExample) |
| RU (1) | RU2275697C2 (enExample) |
| WO (1) | WO2003041084A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6833593B2 (en) | 2001-11-09 | 2004-12-21 | Thin Film Electronics Asa | Electrode means, a method for its manufacture, an apparatus comprising the electrode means as well as use of the latter |
| US6724028B2 (en) | 2001-12-10 | 2004-04-20 | Hans Gude Gudesen | Matrix-addressable array of integrated transistor/memory structures |
| US6649504B2 (en) | 2001-12-14 | 2003-11-18 | Thin Film Electronics Asa | Method for fabricating high aspect ratio electrodes |
| NO321280B1 (no) | 2004-07-22 | 2006-04-18 | Thin Film Electronics Asa | Organisk, elektronisk krets og fremgangsmate til dens fremstilling |
| US7808024B2 (en) * | 2004-09-27 | 2010-10-05 | Intel Corporation | Ferroelectric polymer memory module |
| WO2014158187A1 (en) * | 2013-03-29 | 2014-10-02 | Applied Materials, Inc. | Substrate imprinted with a pattern for forming isolated device regions |
| US10199386B2 (en) * | 2015-07-23 | 2019-02-05 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing same |
| KR102408494B1 (ko) * | 2019-08-13 | 2022-06-15 | 브이메모리 주식회사 | 전기장을 이용한 전류 경로 제어 방법 및 전자 소자 |
| CN114582632B (zh) * | 2022-01-11 | 2024-05-17 | 华东师范大学 | 一种应用于动态目标提取的铁电电容阵列及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4952031A (en) * | 1987-06-19 | 1990-08-28 | Victor Company Of Japan, Ltd. | Liquid crystal display device |
| US5017515A (en) * | 1989-10-02 | 1991-05-21 | Texas Instruments Incorporated | Process for minimizing lateral distance between elements in an integrated circuit by using sidewall spacers |
| JPH07106450A (ja) * | 1993-10-08 | 1995-04-21 | Olympus Optical Co Ltd | 強誘電体ゲートトランジスタメモリ |
| NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| DE69739045D1 (de) * | 1997-08-27 | 2008-11-27 | St Microelectronics Srl | Herstellungsverfahren für elektronische Speicherbauelemente mit virtueller Masse |
| US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
| US6473388B1 (en) * | 2000-08-31 | 2002-10-29 | Hewlett Packard Company | Ultra-high density information storage device based on modulated cathodoconductivity |
-
2001
- 2001-11-09 NO NO20015509A patent/NO20015509D0/no unknown
-
2002
- 2002-11-08 ES ES02778118T patent/ES2242883T3/es not_active Expired - Lifetime
- 2002-11-08 JP JP2003543032A patent/JP2005509282A/ja not_active Abandoned
- 2002-11-08 CN CNA028220994A patent/CN1582481A/zh active Pending
- 2002-11-08 DE DE60204239T patent/DE60204239T2/de not_active Expired - Fee Related
- 2002-11-08 KR KR1020047007005A patent/KR100577544B1/ko not_active Expired - Fee Related
- 2002-11-08 WO PCT/NO2002/000414 patent/WO2003041084A1/en not_active Ceased
- 2002-11-08 AU AU2002339770A patent/AU2002339770B2/en not_active Ceased
- 2002-11-08 AT AT02778118T patent/ATE295990T1/de not_active IP Right Cessation
- 2002-11-08 EP EP02778118A patent/EP1446805B8/en not_active Expired - Lifetime
- 2002-11-08 CA CA002466267A patent/CA2466267C/en not_active Expired - Fee Related
- 2002-11-08 RU RU2004116275/09A patent/RU2275697C2/ru not_active IP Right Cessation
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