JP2005507180A5 - - Google Patents
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- JP2005507180A5 JP2005507180A5 JP2003541075A JP2003541075A JP2005507180A5 JP 2005507180 A5 JP2005507180 A5 JP 2005507180A5 JP 2003541075 A JP2003541075 A JP 2003541075A JP 2003541075 A JP2003541075 A JP 2003541075A JP 2005507180 A5 JP2005507180 A5 JP 2005507180A5
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- JP
- Japan
- Prior art keywords
- insulator
- poly
- styrene
- organic
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000012212 insulator Substances 0.000 claims description 14
- PPBRXRYQALVLMV-UHFFFAOYSA-N styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims 6
- 239000003990 capacitor Substances 0.000 claims 3
- 230000005669 field effect Effects 0.000 claims 3
- 229920000642 polymer Polymers 0.000 claims 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims 1
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 claims 1
- 125000006414 CCl Chemical group ClC* 0.000 claims 1
- 239000004971 Cross linker Substances 0.000 claims 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N Melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims 1
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 239000004926 polymethyl methacrylate Substances 0.000 claims 1
- 229920002451 polyvinyl alcohol Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229920005601 base polymer Polymers 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002102 polyvinyl toluene Polymers 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N α-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
Description
他の実施態様によると、この絶縁体材料は一般式
(−CH2 CCl2−)x−(−CH2CH(CN)−)y−(CH2C(CH3)(CO2CH3)−)z
[式中、x、y及びzはそれぞれ相互に無関係で、0〜1の値を表し、有利に実施例中に記載された値を表すことができる]で示される市販のPVDC−PAN−PMMA−コポリマーを有する。
(−CH2 CCl2−)x−(−CH2CH(CN)−)y−(CH2C(CH3)(CO2CH3)−)z
[式中、x、y及びzはそれぞれ相互に無関係で、0〜1の値を表し、有利に実施例中に記載された値を表すことができる]で示される市販のPVDC−PAN−PMMA−コポリマーを有する。
実施態様によると、絶縁体混合物は一般式
[Ax/B1-x]
のベースポリマーを有し、その際に、Aは例えばポリヒドロキシスチレンであり、Bはポリ(スチレン−コ−アリルアルコール)、例えばポリビニルトルエン、ポリ−アルファ−メチルスチレンであり、xは0.5〜1の値を表すことができる。
[Ax/B1-x]
のベースポリマーを有し、その際に、Aは例えばポリヒドロキシスチレンであり、Bはポリ(スチレン−コ−アリルアルコール)、例えばポリビニルトルエン、ポリ−アルファ−メチルスチレンであり、xは0.5〜1の値を表すことができる。
b) 電気的要求:
− 絶縁体層の比誘電率は、1Hz〜100kHzの周波数領域においてほぼ一定である。「ほぼ一定」とは、この場合に比誘電率の変動が50%以下の場合の比誘電率を表す。
− 絶縁体層の比誘電率は、1Hz〜100kHzの周波数領域においてほぼ一定である。「ほぼ一定」とは、この場合に比誘電率の変動が50%以下の場合の比誘電率を表す。
Claims (7)
- 絶縁体層の誘電率の変動は1Hz〜100kHzの周波数領域において≦50%である、有機電界効果型トランジスタ及び/又は少なくとも部分的に有機材料をベースとするキャパシタ用の絶縁体において、前記絶縁体は主として有機材料からなり、かつ一般式
(−CH 2 CCl 2 −) x −(−CH 2 CH(CN)−) y −(CH 2 C(CH 3 )(CO 2 CH 3 )−) z
[式中、x、y及びzはそれぞれ相互に無関係で、0〜1の値を表すことができる]のPVDC−PAN−PMMA−コポリマーを有する、絶縁体。 - さらに架橋剤成分のHMMMを有する、請求項1記載の絶縁体。
- さらにCymelを有する、請求項1又は2記載の絶縁体。
- 絶縁体層の誘電率の変動は1Hz〜100kHzの周波数領域において≦50%である、有機電界効果型トランジスタ及び/又は少なくとも部分的に有機材料をベースとするキャパシタ用の絶縁体において、前記絶縁体は主として有機材料からなり、かつ一般式
[Ax/B1-x]
[式中、Aはポリヒドロキシスチレンであり、Bはポリ(スチレン−コ−アリルアルコール)、ポリビニルアルコール、及び/又はポリ−α−メチルスチレンであり、xは0.5〜1の値を表すことができる]のポリマーを有する、絶縁体。 - ポリヒドロキシスチレン50%/ポリ(スチレン−コ−アリルアルコール)50%からなる混合物を有する、請求項4記載の絶縁体。
- 絶縁体層の誘電率の変動は1Hz〜100kHzの周波数領域において≦50%である、有機電界効果型トランジスタ及び/又は少なくとも部分的に有機材料をベースとするキャパシタ用の絶縁体において、前記絶縁体は主として有機材料からなり、かつ一般式
[Ax/By]
[式中、Aはポリ(ビニルトルエン−コ−アルファメチルスチレン)であり、Bはポリ(スチレン−コ−アリルアルコール)であり、その際、x及びyの値は同じ又は異なり、0.5〜1の値を有する]の2種のポリマーの混合物を有する、絶縁体。 - 前記ポリマーをジオキサン中に溶かし、前記溶液を基材に塗布しかつ乾燥させることにより製造された、請求項1から6までのいずれか1項記載の絶縁体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10151036A DE10151036A1 (de) | 2001-10-16 | 2001-10-16 | Isolator für ein organisches Elektronikbauteil |
PCT/DE2002/003292 WO2003038921A1 (de) | 2001-10-16 | 2002-09-05 | Isolator für ein organisches elektronikbauteil |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005507180A JP2005507180A (ja) | 2005-03-10 |
JP2005507180A5 true JP2005507180A5 (ja) | 2009-03-19 |
JP4360911B2 JP4360911B2 (ja) | 2009-11-11 |
Family
ID=7702674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003541075A Expired - Fee Related JP4360911B2 (ja) | 2001-10-16 | 2002-09-05 | 有機電子デバイス用の絶縁体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7298023B2 (ja) |
EP (1) | EP1436850A1 (ja) |
JP (1) | JP4360911B2 (ja) |
DE (1) | DE10151036A1 (ja) |
WO (1) | WO2003038921A1 (ja) |
Families Citing this family (12)
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DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005044306A1 (de) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
CH705051B1 (fr) * | 2007-12-21 | 2012-12-14 | Swatch Group Res & Dev Ltd | Dispositif d'affichage à matrice active. |
US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
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CN106688050B (zh) | 2014-06-11 | 2018-09-18 | 伊斯曼柯达公司 | 具有带含硫代硫酸盐聚合物的电介质层的器件 |
DE102016115742B4 (de) | 2015-12-08 | 2022-11-24 | Shanghai Tianma Micro-electronics Co., Ltd. | Verbundsubstrat, flexible Anzeigevorrichtung und Verfahren zu deren Herstellung |
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DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
DE10047171A1 (de) | 2000-09-22 | 2002-04-18 | Siemens Ag | Elektrode und/oder Leiterbahn für organische Bauelemente und Herstellungverfahren dazu |
KR20020036916A (ko) | 2000-11-11 | 2002-05-17 | 주승기 | 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자 |
GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
KR100390522B1 (ko) | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
US20020170897A1 (en) | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
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JP3865601B2 (ja) * | 2001-06-12 | 2007-01-10 | 日東電工株式会社 | 電磁波抑制体シート |
JP2003089259A (ja) | 2001-09-18 | 2003-03-25 | Hitachi Ltd | パターン形成方法およびパターン形成装置 |
US7351660B2 (en) | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6946332B2 (en) | 2002-03-15 | 2005-09-20 | Lucent Technologies Inc. | Forming nanoscale patterned thin film metal layers |
US6812509B2 (en) | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
US6870183B2 (en) | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
-
2001
- 2001-10-16 DE DE10151036A patent/DE10151036A1/de not_active Withdrawn
-
2002
- 2002-09-05 WO PCT/DE2002/003292 patent/WO2003038921A1/de active Application Filing
- 2002-09-05 US US10/492,922 patent/US7298023B2/en not_active Expired - Fee Related
- 2002-09-05 EP EP02769910A patent/EP1436850A1/de not_active Withdrawn
- 2002-09-05 JP JP2003541075A patent/JP4360911B2/ja not_active Expired - Fee Related
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