JP2005502202A - 電子デバイスおよび製造方法 - Google Patents

電子デバイスおよび製造方法 Download PDF

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Publication number
JP2005502202A
JP2005502202A JP2003525884A JP2003525884A JP2005502202A JP 2005502202 A JP2005502202 A JP 2005502202A JP 2003525884 A JP2003525884 A JP 2003525884A JP 2003525884 A JP2003525884 A JP 2003525884A JP 2005502202 A JP2005502202 A JP 2005502202A
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JP
Japan
Prior art keywords
compound
spin
groove
substrate
solvent
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Withdrawn
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JP2003525884A
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English (en)
Japanese (ja)
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JP2005502202A5 (https=
Inventor
エンディシュ，デニス
レヴァート，ジョセフ
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Honeywell International Inc
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Honeywell International Inc
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Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2005502202A publication Critical patent/JP2005502202A/ja
Publication of JP2005502202A5 publication Critical patent/JP2005502202A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6925—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ

Landscapes

  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2003525884A 2001-08-29 2002-08-23 電子デバイスおよび製造方法 Withdrawn JP2005502202A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/943,237 US20030054616A1 (en) 2001-08-29 2001-08-29 Electronic devices and methods of manufacture
PCT/US2002/026780 WO2003021636A2 (en) 2001-08-29 2002-08-23 Electronic devices and methods of manufacture

Publications (2)

Publication Number Publication Date
JP2005502202A true JP2005502202A (ja) 2005-01-20
JP2005502202A5 JP2005502202A5 (https=) 2005-12-22

Family

ID=25479290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003525884A Withdrawn JP2005502202A (ja) 2001-08-29 2002-08-23 電子デバイスおよび製造方法

Country Status (8)

Country Link
US (1) US20030054616A1 (https=)
EP (1) EP1421615A2 (https=)
JP (1) JP2005502202A (https=)
KR (1) KR20040033000A (https=)
CN (1) CN1579016A (https=)
AU (1) AU2002326737A1 (https=)
TW (1) TW569340B (https=)
WO (1) WO2003021636A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017092457A (ja) * 2015-10-23 2017-05-25 三星エスディアイ株式会社Samsung SDI Co., Ltd. 膜構造物の製造方法およびパターン形成方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI320214B (en) * 2002-08-22 2010-02-01 Method of forming a trench isolation structure
US7348281B2 (en) 2003-09-19 2008-03-25 Brewer Science Inc. Method of filling structures for forming via-first dual damascene interconnects
JP2005150500A (ja) * 2003-11-18 2005-06-09 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2005166700A (ja) 2003-11-28 2005-06-23 Toshiba Corp 半導体装置及びその製造方法
KR100562302B1 (ko) * 2003-12-27 2006-03-22 동부아남반도체 주식회사 멀티 화학액 처리 단계를 이용한 랜덤 폴리머 제거 방법
US7924778B2 (en) * 2005-08-12 2011-04-12 Nextel Communications Inc. System and method of increasing the data throughput of the PDCH channel in a wireless communication system
US20140021462A1 (en) * 2011-04-06 2014-01-23 Konica Minolta, Inc. Method for manufacturing organic electroluminescent element, and organic electroluminescent element
KR102021484B1 (ko) * 2014-10-31 2019-09-16 삼성에스디아이 주식회사 막 구조물 제조 방법, 막 구조물, 및 패턴형성방법
KR101907499B1 (ko) * 2015-11-20 2018-10-12 삼성에스디아이 주식회사 막 구조물 제조 방법 및 패턴형성방법
KR102015406B1 (ko) * 2016-01-25 2019-08-28 삼성에스디아이 주식회사 막 구조물 제조 방법 및 패턴형성방법
TWI713679B (zh) * 2017-01-23 2020-12-21 聯華電子股份有限公司 互補式金氧半導體元件及其製作方法
KR102112737B1 (ko) * 2017-04-28 2020-05-19 삼성에스디아이 주식회사 막 구조물 제조 방법 및 패턴형성방법

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US4510176A (en) * 1983-09-26 1985-04-09 At&T Bell Laboratories Removal of coating from periphery of a semiconductor wafer
US4732785A (en) * 1986-09-26 1988-03-22 Motorola, Inc. Edge bead removal process for spin on films
US5296330A (en) * 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
JP2951504B2 (ja) * 1992-06-05 1999-09-20 シャープ株式会社 シリル化平坦化レジスト及び平坦化方法並びに集積回路デバイスの製造方法
JP3740207B2 (ja) * 1996-02-13 2006-02-01 大日本スクリーン製造株式会社 基板表面に形成されたシリカ系被膜の膜溶解方法
US5866481A (en) * 1996-06-07 1999-02-02 Taiwan Semiconductor Manufacturing Company Ltd. Selective partial curing of spin-on-glass by ultraviolet radiation to protect integrated circuit dice near the wafer edge
EP0844283B1 (en) * 1996-11-20 2002-10-09 JSR Corporation Curable resin composition and cured products
US6485576B1 (en) * 1996-11-22 2002-11-26 Taiwan Semiconductor Manufacturing Co., Ltd. Method for removing coating bead at wafer flat edge
US5913979A (en) * 1997-01-08 1999-06-22 Taiwan Semiconductor Manufacturing Co., Ltd Method for removing spin-on-glass at wafer edge
US6194283B1 (en) * 1997-10-29 2001-02-27 Advanced Micro Devices, Inc. High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers
US6008109A (en) * 1997-12-19 1999-12-28 Advanced Micro Devices, Inc. Trench isolation structure having a low K dielectric encapsulated by oxide
US6140254A (en) * 1998-09-18 2000-10-31 Alliedsignal Inc. Edge bead removal for nanoporous dielectric silica coatings
JP2001181577A (ja) * 1999-12-27 2001-07-03 Sumitomo Chem Co Ltd 多孔質有機膜形成用塗布液および多孔質有機膜の形成方法
US6565920B1 (en) * 2000-06-08 2003-05-20 Honeywell International Inc. Edge bead removal for spin-on materials containing low volatility solvents fusing carbon dioxide cleaning
US6444495B1 (en) * 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017092457A (ja) * 2015-10-23 2017-05-25 三星エスディアイ株式会社Samsung SDI Co., Ltd. 膜構造物の製造方法およびパターン形成方法

Also Published As

Publication number Publication date
US20030054616A1 (en) 2003-03-20
WO2003021636A3 (en) 2003-11-06
WO2003021636A2 (en) 2003-03-13
WO2003021636B1 (en) 2003-12-04
EP1421615A2 (en) 2004-05-26
AU2002326737A1 (en) 2003-03-18
CN1579016A (zh) 2005-02-09
KR20040033000A (ko) 2004-04-17
TW569340B (en) 2004-01-01

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