JP2005347773A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005347773A5 JP2005347773A5 JP2005227878A JP2005227878A JP2005347773A5 JP 2005347773 A5 JP2005347773 A5 JP 2005347773A5 JP 2005227878 A JP2005227878 A JP 2005227878A JP 2005227878 A JP2005227878 A JP 2005227878A JP 2005347773 A5 JP2005347773 A5 JP 2005347773A5
- Authority
- JP
- Japan
- Prior art keywords
- probe
- electron beam
- wiring
- current
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000523 sample Substances 0.000 claims description 137
- 238000010894 electron beam technology Methods 0.000 claims description 65
- 238000007689 inspection Methods 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 36
- 230000002950 deficient Effects 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 230000001678 irradiating Effects 0.000 claims description 14
- 238000003384 imaging method Methods 0.000 claims description 8
- 230000002159 abnormal effect Effects 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 35
- 239000010410 layer Substances 0.000 description 15
- 238000004458 analytical method Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 230000003287 optical Effects 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052904 quartz Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005227878A JP4901154B2 (ja) | 2005-08-05 | 2005-08-05 | 半導体装置の検査方法および検査装置ならびに半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005227878A JP4901154B2 (ja) | 2005-08-05 | 2005-08-05 | 半導体装置の検査方法および検査装置ならびに半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001174988A Division JP3955445B2 (ja) | 2001-06-11 | 2001-06-11 | 半導体装置の検査方法及び試料検査装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005347773A JP2005347773A (ja) | 2005-12-15 |
| JP2005347773A5 true JP2005347773A5 (fr) | 2008-07-24 |
| JP4901154B2 JP4901154B2 (ja) | 2012-03-21 |
Family
ID=35499799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005227878A Expired - Fee Related JP4901154B2 (ja) | 2005-08-05 | 2005-08-05 | 半導体装置の検査方法および検査装置ならびに半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4901154B2 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100741858B1 (ko) | 2006-05-18 | 2007-07-24 | 삼성전자주식회사 | 반도체 회로의 결함 검사용 모니터링 패턴 및 이를 이용한결함 검사 방법. |
| JP5276921B2 (ja) * | 2008-08-08 | 2013-08-28 | 株式会社日立ハイテクノロジーズ | 検査装置 |
| JP5908418B2 (ja) | 2013-01-31 | 2016-04-26 | 株式会社東芝 | 半導体装置の検査回路、検査方法及び検査装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01223709A (ja) * | 1988-03-02 | 1989-09-06 | Tdk Corp | コイル |
| JPH02195271A (ja) * | 1989-01-25 | 1990-08-01 | Hitachi Ltd | 電圧波形計測システム |
| JPH0567654A (ja) * | 1991-09-09 | 1993-03-19 | Fujitsu Ltd | 半導体試験装置及び半導体集積回路装置の試験方法 |
| JPH0572234A (ja) * | 1991-09-12 | 1993-03-23 | Mitsubishi Electric Corp | 半導体装置の配線評価方法 |
| US5404110A (en) * | 1993-03-25 | 1995-04-04 | International Business Machines Corporation | System using induced current for contactless testing of wiring networks |
| JP2861849B2 (ja) * | 1994-08-31 | 1999-02-24 | 日本電気株式会社 | 半導体集積回路チップ上の配線試験方法及びその装置 |
| JPH09223726A (ja) * | 1996-02-14 | 1997-08-26 | Hitachi Ltd | 荷電粒子ビームによる断面解析システムおよびその方法並びに荷電粒子ビーム処理装置 |
| JP3577839B2 (ja) * | 1996-06-04 | 2004-10-20 | 株式会社日立製作所 | 不良検査方法および装置 |
| JPH1187451A (ja) * | 1997-09-08 | 1999-03-30 | Mitsubishi Electric Corp | 半導体装置の検査方法および半導体装置検査器 |
| JP3652144B2 (ja) * | 1998-11-17 | 2005-05-25 | 株式会社日立製作所 | プローブ装置 |
| JP3708763B2 (ja) * | 1999-08-31 | 2005-10-19 | 株式会社東芝 | 欠陥検出方法 |
-
2005
- 2005-08-05 JP JP2005227878A patent/JP4901154B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4034500B2 (ja) | 半導体装置の検査方法及び検査装置、及びそれを用いた半導体装置の製造方法 | |
| JP3877952B2 (ja) | デバイス検査装置および検査方法 | |
| US6445199B1 (en) | Methods and apparatus for generating spatially resolved voltage contrast maps of semiconductor test structures | |
| US6576923B2 (en) | Inspectable buried test structures and methods for inspecting the same | |
| US6509197B1 (en) | Inspectable buried test structures and methods for inspecting the same | |
| JP3732738B2 (ja) | 半導体デバイス検査装置 | |
| US7733099B2 (en) | Monitoring pattern for detecting a defect in a semiconductor device and method for detecting a defect | |
| US6524873B1 (en) | Continuous movement scans of test structures on semiconductor integrated circuits | |
| US7394070B2 (en) | Method and apparatus for inspecting patterns | |
| JP3955445B2 (ja) | 半導体装置の検査方法及び試料検査装置 | |
| US20050176159A1 (en) | Method for inspecting a wafer and apparatus for inspecting a wafer | |
| JP5276921B2 (ja) | 検査装置 | |
| JP4606443B2 (ja) | 荷電粒子線を用いた回路パターン用基板検査方法および基板検査装置 | |
| KR20180036739A (ko) | 회로 검사 방법 및 시료 검사 장치 | |
| JP4629493B2 (ja) | 半導体装置の検査方法 | |
| JP4901154B2 (ja) | 半導体装置の検査方法および検査装置ならびに半導体装置の製造方法 | |
| JP2005347773A5 (fr) | ||
| JP2002228608A (ja) | 半導体素子の電気的欠陥検査装置、これを用いた半導体素子の電気的欠陥検査方法 | |
| JP4728207B2 (ja) | 検査装置 | |
| KR100683386B1 (ko) | 레이저 스캔을 이용한 반도체 소자 불량 검색 방법 및 장치 | |
| KR101682520B1 (ko) | 검사장치 및 피처리물 검사방법 | |
| US6914443B2 (en) | Apparatus and method for enhanced voltage contrast analysis | |
| CN114530179A (zh) | 三维存储器的确定失效沟道孔的方法及测试样品 | |
| JP4320308B2 (ja) | 欠陥検査方法 | |
| JP2008041757A (ja) | 半導体検査装置および半導体検査方法 |