JP2005340572A - 光電変換膜積層型固体撮像装置 - Google Patents
光電変換膜積層型固体撮像装置 Download PDFInfo
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- JP2005340572A JP2005340572A JP2004158843A JP2004158843A JP2005340572A JP 2005340572 A JP2005340572 A JP 2005340572A JP 2004158843 A JP2004158843 A JP 2004158843A JP 2004158843 A JP2004158843 A JP 2004158843A JP 2005340572 A JP2005340572 A JP 2005340572A
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/17—Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N2209/00—Details of colour television systems
- H04N2209/04—Picture signal generators
- H04N2209/041—Picture signal generators using solid-state devices
- H04N2209/042—Picture signal generators using solid-state devices having a single pick-up sensor
- H04N2209/047—Picture signal generators using solid-state devices having a single pick-up sensor using multispectral pick-up elements
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Abstract
【解決手段】 半導体基板と、該半導体基板上に積層され入射光量に応じた信号電荷を発生する光電変換膜と、該光電変換膜に被着され行方向及び列方向に配列された複数の画素電極膜と、前記半導体基板表面部に形成された複数列の垂直転送路102r,102g,102bと、前記半導体基板表面部に形成され前記各画素電極膜から得られる前記信号電荷を蓄積すると共に蓄積された前記信号電荷を対応の前記垂直転送路に読み出す複数の電荷蓄積部138r,138g,138bとを備える光電変換膜積層型固体撮像装置において、隣接する垂直転送路の各列に設ける電荷蓄積部138r,138g,138bを各列毎に垂直転送路に沿う方向にずらして設ける。
【選択図】 図2
Description
図1は、本発明の第1の実施形態に係る光電変換膜積層型固体撮像装置の表面模式図である。光電変換膜積層型固体撮像装置100には、多数の受光部(画素)101が、この例では格子状に配列されている。各受光部101は、画素ピッチPxで水平方向(行方向)に配列され、画素ピッチPyで垂直方向(列方向)に配列される。
図4は、本発明の第2の実施形態に係る光電変換膜積層型固体撮像装置の6画素分の表面模式図である。
図5は、本発明の第3の実施形態に係る光電変換膜積層型固体撮像装置の要部表面模式図である。
102r,102g,102b 垂直転送路
103 水平転送路
115 チャネルストップ(P+)
120r,120g,120b 透明の画素電極膜
121r,121g,121b 光電変換膜
122r,122g,122b 透明の共通電極膜
123r,123g,123b 第2縦配線
124r,124g,124b 横配線
125 絶縁膜
126r,126g,126b 第1縦配線
127,128 透明絶縁膜
129 透明保護膜
130 n型半導体基板
131 Pウェル層
132 転送電極
133 光遮蔽膜
137,137r,137g,137b 縦配線接続部(n+)
138r,138g,138b 電荷蓄積部
140r,140g,140b 信号読出部
Claims (6)
- 半導体基板と、該半導体基板上に積層され入射光量に応じた信号電荷を発生する光電変換膜と、該光電変換膜に被着され行方向及び列方向に配列された複数の画素電極膜と、前記半導体基板表面部に形成された複数列の垂直転送路と、前記半導体基板表面部に形成され前記各画素電極膜から得られる前記信号電荷を蓄積すると共に蓄積された前記信号電荷を対応の前記垂直転送路に読み出す複数の電荷蓄積部とを備える光電変換膜積層型固体撮像装置において、隣接する前記垂直転送路の各列に設ける前記電荷蓄積部を、各列毎に、前記垂直転送路に沿う方向にずらして設けたことを特徴とする光電変換膜積層型固体撮像装置。
- 前記画素電極膜の前記行方向の配列ピッチと前記列方向の配列ピッチとを等しくしたことを特徴とする請求項1に記載の光電変換膜積層型固体撮像装置。
- 前記電荷蓄積部の前記半導体基板表面部における配列が最密となるように前記画素電極膜の前記行方向の配列ピッチと前記列方向の配列ピッチを決めることを特徴とする請求項1に記載の光電変換膜積層型固体撮像装置。
- 前記光電変換膜として、赤色検出用光電変換膜と緑色検出用光電変換膜と青色検出用光電変換膜とが設けられることを特徴とする請求項1乃至請求項3のいずれかに記載の光電変換膜積層型固体撮像装置。
- 前記赤色検出用光電変換膜に被着される赤色用の前記画素電極膜と、前記緑色検出用光電変換膜に被着される緑色用の前記画素電極膜と、前記青色検出用光電変換膜に被着される青色用の前記画素電極膜とが、入射光方向に整列して設けられることを特徴とする請求項4に記載の光電変換膜積層型固体撮像装置。
- 前記赤色検出用光電変換膜に被着される赤色用の前記画素電極膜と、前記緑色検出用光電変換膜に被着される緑色用の前記画素電極膜と、前記青色検出用光電変換膜に被着される青色用の前記画素電極膜とが、該画素電極膜の配列ピッチの1/3ピッチづつ前記行方向にずらして設けられることを特徴とする請求項4に記載の光電変換膜積層型固体撮像装置。
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JP2004158843A JP4533667B2 (ja) | 2004-05-28 | 2004-05-28 | 光電変換膜積層型固体撮像装置 |
US11/137,403 US7733398B2 (en) | 2004-05-28 | 2005-05-26 | Photoelectric converting film stack type solid-state image pickup device |
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JP2004158843A JP4533667B2 (ja) | 2004-05-28 | 2004-05-28 | 光電変換膜積層型固体撮像装置 |
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JP2005340572A true JP2005340572A (ja) | 2005-12-08 |
JP4533667B2 JP4533667B2 (ja) | 2010-09-01 |
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JP2004158843A Expired - Fee Related JP4533667B2 (ja) | 2004-05-28 | 2004-05-28 | 光電変換膜積層型固体撮像装置 |
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JP (1) | JP4533667B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288404A (ja) * | 2007-05-18 | 2008-11-27 | Olympus Corp | 光電変換膜積層型固体撮像素子 |
JP2009054806A (ja) * | 2007-08-27 | 2009-03-12 | Canon Inc | 撮像素子及び撮像装置 |
WO2020218046A1 (ja) * | 2019-04-26 | 2020-10-29 | パナソニックIpマネジメント株式会社 | 撮像素子 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8054355B2 (en) * | 2008-10-16 | 2011-11-08 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
JP5470928B2 (ja) | 2009-03-11 | 2014-04-16 | ソニー株式会社 | 固体撮像装置の製造方法 |
FR2947952B1 (fr) * | 2009-07-07 | 2011-11-25 | Commissariat Energie Atomique | Dispositif photo-detecteur et procede de realisation de dispositif photo-detecteur |
US20110156197A1 (en) * | 2009-12-31 | 2011-06-30 | Tivarus Cristian A | Interwafer interconnects for stacked CMOS image sensors |
US20110156195A1 (en) * | 2009-12-31 | 2011-06-30 | Tivarus Cristian A | Interwafer interconnects for stacked CMOS image sensors |
JP2011258666A (ja) * | 2010-06-07 | 2011-12-22 | Toshiba Corp | 固体撮像装置 |
WO2014002415A1 (ja) * | 2012-06-28 | 2014-01-03 | パナソニック株式会社 | 撮像装置 |
KR102355558B1 (ko) * | 2014-07-31 | 2022-01-27 | 삼성전자주식회사 | 이미지 센서 |
CN109300923B (zh) * | 2017-07-25 | 2023-11-17 | 松下知识产权经营株式会社 | 摄像装置 |
CN113474893A (zh) * | 2019-04-26 | 2021-10-01 | 松下知识产权经营株式会社 | 摄像元件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6489363A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Solid state image sensing device |
JP2002083946A (ja) * | 2000-09-07 | 2002-03-22 | Nippon Hoso Kyokai <Nhk> | イメージセンサ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS58103165A (ja) | 1981-12-15 | 1983-06-20 | Fuji Photo Film Co Ltd | 3層4階構造の固体カラ−撮像デバイス |
JP3405099B2 (ja) | 1996-11-27 | 2003-05-12 | 松下電器産業株式会社 | カラーセンサ |
JP3830590B2 (ja) * | 1996-10-30 | 2006-10-04 | 株式会社東芝 | 固体撮像装置 |
EP1051752A2 (en) | 1998-02-02 | 2000-11-15 | Uniax Corporation | Image sensors made from organic semiconductors |
WO2000077861A1 (en) | 1999-06-14 | 2000-12-21 | Augusto Carlos J R P | Stacked wavelength-selective opto-electronic device |
US7154549B2 (en) * | 2000-12-18 | 2006-12-26 | Fuji Photo Film Co., Ltd. | Solid state image sensor having a single-layered electrode structure |
US20040233308A1 (en) * | 2003-05-20 | 2004-11-25 | Elliott Candice Hellen Brown | Image capture device and camera |
-
2004
- 2004-05-28 JP JP2004158843A patent/JP4533667B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-26 US US11/137,403 patent/US7733398B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6489363A (en) * | 1987-09-29 | 1989-04-03 | Toshiba Corp | Solid state image sensing device |
JP2002083946A (ja) * | 2000-09-07 | 2002-03-22 | Nippon Hoso Kyokai <Nhk> | イメージセンサ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288404A (ja) * | 2007-05-18 | 2008-11-27 | Olympus Corp | 光電変換膜積層型固体撮像素子 |
JP2009054806A (ja) * | 2007-08-27 | 2009-03-12 | Canon Inc | 撮像素子及び撮像装置 |
WO2020218046A1 (ja) * | 2019-04-26 | 2020-10-29 | パナソニックIpマネジメント株式会社 | 撮像素子 |
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US7733398B2 (en) | 2010-06-08 |
US20050264662A1 (en) | 2005-12-01 |
JP4533667B2 (ja) | 2010-09-01 |
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