JP2005303191A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005303191A JP2005303191A JP2004120319A JP2004120319A JP2005303191A JP 2005303191 A JP2005303191 A JP 2005303191A JP 2004120319 A JP2004120319 A JP 2004120319A JP 2004120319 A JP2004120319 A JP 2004120319A JP 2005303191 A JP2005303191 A JP 2005303191A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- film
- forming
- manufacturing
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000009792 diffusion process Methods 0.000 claims abstract description 38
- 239000007789 gas Substances 0.000 claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052786 argon Inorganic materials 0.000 claims abstract description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 238000009832 plasma treatment Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 21
- 239000011737 fluorine Substances 0.000 description 21
- 229910052731 fluorine Inorganic materials 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 21
- 230000002265 prevention Effects 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 14
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910016509 CuF 2 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004120319A JP2005303191A (ja) | 2004-04-15 | 2004-04-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004120319A JP2005303191A (ja) | 2004-04-15 | 2004-04-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005303191A true JP2005303191A (ja) | 2005-10-27 |
| JP2005303191A5 JP2005303191A5 (enrdf_load_stackoverflow) | 2007-05-31 |
Family
ID=35334300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004120319A Pending JP2005303191A (ja) | 2004-04-15 | 2004-04-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005303191A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227507A (ja) * | 2006-02-22 | 2007-09-06 | Fujitsu Ltd | 半導体装置の製造方法および半導体装置 |
| WO2010086930A1 (ja) * | 2009-01-27 | 2010-08-05 | パナソニック株式会社 | 半導体装置の製造方法 |
| JP2011101028A (ja) * | 2010-12-17 | 2011-05-19 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| US8252694B2 (en) | 2007-11-19 | 2012-08-28 | Tokyo Electron Limited | Plasma etching method and storage medium |
| JP2014523112A (ja) * | 2011-06-15 | 2014-09-08 | アプライド マテリアルズ インコーポレイテッド | レーザ・プラズマエッチングによる基板のダイシング用水溶性マスク |
-
2004
- 2004-04-15 JP JP2004120319A patent/JP2005303191A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227507A (ja) * | 2006-02-22 | 2007-09-06 | Fujitsu Ltd | 半導体装置の製造方法および半導体装置 |
| US8252694B2 (en) | 2007-11-19 | 2012-08-28 | Tokyo Electron Limited | Plasma etching method and storage medium |
| US9130018B2 (en) | 2007-11-19 | 2015-09-08 | Tokyo Electron Limited | Plasma etching method and storage medium |
| WO2010086930A1 (ja) * | 2009-01-27 | 2010-08-05 | パナソニック株式会社 | 半導体装置の製造方法 |
| JP2011101028A (ja) * | 2010-12-17 | 2011-05-19 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
| JP2014523112A (ja) * | 2011-06-15 | 2014-09-08 | アプライド マテリアルズ インコーポレイテッド | レーザ・プラズマエッチングによる基板のダイシング用水溶性マスク |
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Legal Events
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Effective date: 20070406 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070406 |
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| A977 | Report on retrieval |
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Effective date: 20080805 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
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