JP2005303191A5 - - Google Patents
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- Publication number
- JP2005303191A5 JP2005303191A5 JP2004120319A JP2004120319A JP2005303191A5 JP 2005303191 A5 JP2005303191 A5 JP 2005303191A5 JP 2004120319 A JP2004120319 A JP 2004120319A JP 2004120319 A JP2004120319 A JP 2004120319A JP 2005303191 A5 JP2005303191 A5 JP 2005303191A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- hole
- semiconductor device
- manufacturing
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000009792 diffusion process Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004120319A JP2005303191A (ja) | 2004-04-15 | 2004-04-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004120319A JP2005303191A (ja) | 2004-04-15 | 2004-04-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005303191A JP2005303191A (ja) | 2005-10-27 |
| JP2005303191A5 true JP2005303191A5 (enrdf_load_stackoverflow) | 2007-05-31 |
Family
ID=35334300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004120319A Pending JP2005303191A (ja) | 2004-04-15 | 2004-04-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005303191A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4675258B2 (ja) * | 2006-02-22 | 2011-04-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法および半導体装置 |
| JP5405012B2 (ja) | 2007-11-19 | 2014-02-05 | 東京エレクトロン株式会社 | プラズマエッチング方法及び記憶媒体 |
| JP2010177262A (ja) * | 2009-01-27 | 2010-08-12 | Panasonic Corp | 半導体装置の製造方法 |
| JP5408116B2 (ja) * | 2010-12-17 | 2014-02-05 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US8703581B2 (en) * | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
-
2004
- 2004-04-15 JP JP2004120319A patent/JP2005303191A/ja active Pending
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