JP2005286320A5 - - Google Patents
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- Publication number
- JP2005286320A5 JP2005286320A5 JP2005057482A JP2005057482A JP2005286320A5 JP 2005286320 A5 JP2005286320 A5 JP 2005286320A5 JP 2005057482 A JP2005057482 A JP 2005057482A JP 2005057482 A JP2005057482 A JP 2005057482A JP 2005286320 A5 JP2005286320 A5 JP 2005286320A5
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- layer
- forming
- thin film
- film transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 claims 22
- 239000006096 absorbing agent Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000004020 conductor Substances 0.000 claims 5
- 239000000126 substance Substances 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- IICCLYANAQEHCI-UHFFFAOYSA-N 4,5,6,7-tetrachloro-3',6'-dihydroxy-2',4',5',7'-tetraiodospiro[2-benzofuran-3,9'-xanthene]-1-one Chemical compound O1C(=O)C(C(=C(Cl)C(Cl)=C2Cl)Cl)=C2C21C1=CC(I)=C(O)C(I)=C1OC1=C(I)C(O)=C(I)C=C21 IICCLYANAQEHCI-UHFFFAOYSA-N 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- SEACYXSIPDVVMV-UHFFFAOYSA-L eosin Y Chemical compound [Na+].[Na+].[O-]C(=O)C1=CC=CC=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C([O-])=C(Br)C=C21 SEACYXSIPDVVMV-UHFFFAOYSA-L 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- STZCRXQWRGQSJD-GEEYTBSJSA-M methyl orange Chemical compound [Na+].C1=CC(N(C)C)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 STZCRXQWRGQSJD-GEEYTBSJSA-M 0.000 claims 1
- 229940012189 methyl orange Drugs 0.000 claims 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 claims 1
- 229940043267 rhodamine b Drugs 0.000 claims 1
- 229940081623 rose bengal Drugs 0.000 claims 1
- 229930187593 rose bengal Natural products 0.000 claims 1
- STRXNPAVPKGJQR-UHFFFAOYSA-N rose bengal A Natural products O1C(=O)C(C(=CC=C2Cl)Cl)=C2C21C1=CC(I)=C(O)C(I)=C1OC1=C(I)C(O)=C(I)C=C21 STRXNPAVPKGJQR-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005057482A JP2005286320A (ja) | 2004-03-04 | 2005-03-02 | パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004061102 | 2004-03-04 | ||
| JP2005057482A JP2005286320A (ja) | 2004-03-04 | 2005-03-02 | パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005286320A JP2005286320A (ja) | 2005-10-13 |
| JP2005286320A5 true JP2005286320A5 (enExample) | 2008-03-27 |
Family
ID=35184304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005057482A Withdrawn JP2005286320A (ja) | 2004-03-04 | 2005-03-02 | パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005286320A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4670596B2 (ja) * | 2005-11-04 | 2011-04-13 | セイコーエプソン株式会社 | 膜パターン形成方法、デバイス、電気光学装置、及び電子機器 |
| JP2008052268A (ja) * | 2006-07-28 | 2008-03-06 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| TWI427702B (zh) * | 2006-07-28 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
| JP2008085315A (ja) * | 2006-08-31 | 2008-04-10 | Toppan Printing Co Ltd | 薄膜トランジスタおよびその製造方法 |
| GB2448174B (en) * | 2007-04-04 | 2009-12-09 | Cambridge Display Tech Ltd | Organic thin film transistors |
| TWI456663B (zh) * | 2007-07-20 | 2014-10-11 | Semiconductor Energy Lab | 顯示裝置之製造方法 |
| US8330887B2 (en) * | 2007-07-27 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| US8786793B2 (en) * | 2007-07-27 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2011077500A (ja) * | 2009-09-04 | 2011-04-14 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3403935B2 (ja) * | 1997-03-14 | 2003-05-06 | 株式会社東芝 | 画像形成装置、画像形成方法、およびパターン形成方法、ならびにそれらに用いる感光体 |
| US6791144B1 (en) * | 2000-06-27 | 2004-09-14 | International Business Machines Corporation | Thin film transistor and multilayer film structure and manufacturing method of same |
| JP3516441B2 (ja) * | 2000-07-10 | 2004-04-05 | インターナショナル・ビジネス・マシーンズ・コーポレーション | アクティブマトリックス基板、表示装置、およびアクティブマトリックス基板の製造方法 |
| CN1292496C (zh) * | 2001-05-23 | 2006-12-27 | 造型逻辑有限公司 | 器件的图案形成 |
| JP2002353167A (ja) * | 2001-05-29 | 2002-12-06 | Sharp Corp | 金属配線基板及び金属配線基板の製造方法並びに反射型液晶表示装置用金属配線基板 |
| JP2003059940A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| JP2003251953A (ja) * | 2002-03-06 | 2003-09-09 | Fuji Photo Film Co Ltd | 平版印刷版の処理方法 |
| JP2004006700A (ja) * | 2002-03-27 | 2004-01-08 | Seiko Epson Corp | 表面処理方法、表面処理基板、膜パターンの形成方法、電気光学装置の製造方法、電気光学装置、及び電子機器 |
| JP2003297445A (ja) * | 2002-03-29 | 2003-10-17 | Asahi Kasei Corp | 光電変換素子用塗布組成物 |
| JP4355900B2 (ja) * | 2003-05-20 | 2009-11-04 | 日本電気株式会社 | 基板表面の平坦化方法、並びに平坦化基板、液晶表示装置、有機ｅｌ素子及び半導体装置の製造方法 |
-
2005
- 2005-03-02 JP JP2005057482A patent/JP2005286320A/ja not_active Withdrawn
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