JP2005286320A - パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 - Google Patents
パターン形成方法、薄膜トランジスタ、表示装置及びそれらの作製方法、並びにテレビジョン装置 Download PDFInfo
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- JP2005286320A JP2005286320A JP2005057482A JP2005057482A JP2005286320A JP 2005286320 A JP2005286320 A JP 2005286320A JP 2005057482 A JP2005057482 A JP 2005057482A JP 2005057482 A JP2005057482 A JP 2005057482A JP 2005286320 A JP2005286320 A JP 2005286320A
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007129064A (ja) * | 2005-11-04 | 2007-05-24 | Seiko Epson Corp | 膜パターン形成方法、デバイス、電気光学装置、及び電子機器 |
| JP2008052268A (ja) * | 2006-07-28 | 2008-03-06 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| JP2008085315A (ja) * | 2006-08-31 | 2008-04-10 | Toppan Printing Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP2009049388A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| JP2009055011A (ja) * | 2007-07-27 | 2009-03-12 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2010524217A (ja) * | 2007-04-04 | 2010-07-15 | ケンブリッジ ディスプレイ テクノロジー リミテッド | 有機薄膜トランジスタ |
| JP2011077500A (ja) * | 2009-09-04 | 2011-04-14 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器 |
| TWI427702B (zh) * | 2006-07-28 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
| JP2014168084A (ja) * | 2007-07-27 | 2014-09-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11133631A (ja) * | 1997-03-14 | 1999-05-21 | Toshiba Corp | 画像形成装置、画像形成方法、およびパターン形成方法、ならびにそれらに用いる感光体 |
| JP2002043575A (ja) * | 2000-07-10 | 2002-02-08 | Internatl Business Mach Corp <Ibm> | アクティブマトリックス基板、表示装置、およびアクティブマトリックス基板の製造方法 |
| JP2002076366A (ja) * | 2000-06-27 | 2002-03-15 | Internatl Business Mach Corp <Ibm> | 薄膜トランジスタ、多層膜構造、薄膜トランジスタの製造方法、および多層膜構造の製造方法 |
| WO2002095805A2 (en) * | 2001-05-23 | 2002-11-28 | Plastic Logic Limited | Laser parrering of devices |
| JP2002353167A (ja) * | 2001-05-29 | 2002-12-06 | Sharp Corp | 金属配線基板及び金属配線基板の製造方法並びに反射型液晶表示装置用金属配線基板 |
| JP2003059940A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| JP2003251953A (ja) * | 2002-03-06 | 2003-09-09 | Fuji Photo Film Co Ltd | 平版印刷版の処理方法 |
| JP2003297445A (ja) * | 2002-03-29 | 2003-10-17 | Asahi Kasei Corp | 光電変換素子用塗布組成物 |
| JP2004006700A (ja) * | 2002-03-27 | 2004-01-08 | Seiko Epson Corp | 表面処理方法、表面処理基板、膜パターンの形成方法、電気光学装置の製造方法、電気光学装置、及び電子機器 |
| JP2004349317A (ja) * | 2003-05-20 | 2004-12-09 | Nec Corp | 基板表面の平坦化方法、平坦化基板の製造方法、液晶表示装置および有機エレクトロルミネセンス素子 |
-
2005
- 2005-03-02 JP JP2005057482A patent/JP2005286320A/ja not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11133631A (ja) * | 1997-03-14 | 1999-05-21 | Toshiba Corp | 画像形成装置、画像形成方法、およびパターン形成方法、ならびにそれらに用いる感光体 |
| JP2002076366A (ja) * | 2000-06-27 | 2002-03-15 | Internatl Business Mach Corp <Ibm> | 薄膜トランジスタ、多層膜構造、薄膜トランジスタの製造方法、および多層膜構造の製造方法 |
| JP2002043575A (ja) * | 2000-07-10 | 2002-02-08 | Internatl Business Mach Corp <Ibm> | アクティブマトリックス基板、表示装置、およびアクティブマトリックス基板の製造方法 |
| WO2002095805A2 (en) * | 2001-05-23 | 2002-11-28 | Plastic Logic Limited | Laser parrering of devices |
| JP2002353167A (ja) * | 2001-05-29 | 2002-12-06 | Sharp Corp | 金属配線基板及び金属配線基板の製造方法並びに反射型液晶表示装置用金属配線基板 |
| JP2003059940A (ja) * | 2001-08-08 | 2003-02-28 | Fuji Photo Film Co Ltd | ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法 |
| JP2003251953A (ja) * | 2002-03-06 | 2003-09-09 | Fuji Photo Film Co Ltd | 平版印刷版の処理方法 |
| JP2004006700A (ja) * | 2002-03-27 | 2004-01-08 | Seiko Epson Corp | 表面処理方法、表面処理基板、膜パターンの形成方法、電気光学装置の製造方法、電気光学装置、及び電子機器 |
| JP2003297445A (ja) * | 2002-03-29 | 2003-10-17 | Asahi Kasei Corp | 光電変換素子用塗布組成物 |
| JP2004349317A (ja) * | 2003-05-20 | 2004-12-09 | Nec Corp | 基板表面の平坦化方法、平坦化基板の製造方法、液晶表示装置および有機エレクトロルミネセンス素子 |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007129064A (ja) * | 2005-11-04 | 2007-05-24 | Seiko Epson Corp | 膜パターン形成方法、デバイス、電気光学装置、及び電子機器 |
| JP2008052268A (ja) * | 2006-07-28 | 2008-03-06 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| TWI427702B (zh) * | 2006-07-28 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
| JP2008085315A (ja) * | 2006-08-31 | 2008-04-10 | Toppan Printing Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP2010524217A (ja) * | 2007-04-04 | 2010-07-15 | ケンブリッジ ディスプレイ テクノロジー リミテッド | 有機薄膜トランジスタ |
| JP2009049388A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| JP2009055011A (ja) * | 2007-07-27 | 2009-03-12 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| US8786793B2 (en) | 2007-07-27 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2014168084A (ja) * | 2007-07-27 | 2014-09-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2015144310A (ja) * | 2007-07-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP2011077500A (ja) * | 2009-09-04 | 2011-04-14 | Sony Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法、表示装置、および電子機器 |
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