JP2005276931A5 - - Google Patents

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Publication number
JP2005276931A5
JP2005276931A5 JP2004085052A JP2004085052A JP2005276931A5 JP 2005276931 A5 JP2005276931 A5 JP 2005276931A5 JP 2004085052 A JP2004085052 A JP 2004085052A JP 2004085052 A JP2004085052 A JP 2004085052A JP 2005276931 A5 JP2005276931 A5 JP 2005276931A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004085052A
Other languages
Japanese (ja)
Other versions
JP2005276931A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004085052A priority Critical patent/JP2005276931A/ja
Priority claimed from JP2004085052A external-priority patent/JP2005276931A/ja
Priority to US11/086,379 priority patent/US7265022B2/en
Publication of JP2005276931A publication Critical patent/JP2005276931A/ja
Publication of JP2005276931A5 publication Critical patent/JP2005276931A5/ja
Priority to US11/829,491 priority patent/US7572713B2/en
Priority to US11/829,521 priority patent/US7557422B2/en
Pending legal-status Critical Current

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JP2004085052A 2004-03-23 2004-03-23 半導体装置およびその製造方法 Pending JP2005276931A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004085052A JP2005276931A (ja) 2004-03-23 2004-03-23 半導体装置およびその製造方法
US11/086,379 US7265022B2 (en) 2004-03-23 2005-03-23 Method of fabricating semiconductor device with STI structure
US11/829,491 US7572713B2 (en) 2004-03-23 2007-07-27 Method of fabricating semiconductor device with STI structure
US11/829,521 US7557422B2 (en) 2004-03-23 2007-07-27 Semiconductor device with STI structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004085052A JP2005276931A (ja) 2004-03-23 2004-03-23 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2005276931A JP2005276931A (ja) 2005-10-06
JP2005276931A5 true JP2005276931A5 (enExample) 2006-03-16

Family

ID=35095431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004085052A Pending JP2005276931A (ja) 2004-03-23 2004-03-23 半導体装置およびその製造方法

Country Status (2)

Country Link
US (3) US7265022B2 (enExample)
JP (1) JP2005276931A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005276931A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体装置およびその製造方法
KR100607326B1 (ko) * 2005-06-30 2006-08-01 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100649315B1 (ko) * 2005-09-20 2006-11-24 동부일렉트로닉스 주식회사 플래시 메모리의 소자분리막 제조 방법
KR100660551B1 (ko) * 2005-09-22 2006-12-22 삼성전자주식회사 불휘발성 메모리 소자 및 그 제조 방법
KR100772704B1 (ko) * 2005-09-29 2007-11-02 주식회사 하이닉스반도체 테이퍼형태의 트렌치를 갖는 반도체소자의 제조 방법
JP2007109966A (ja) * 2005-10-14 2007-04-26 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2009164558A (ja) * 2007-12-10 2009-07-23 Toyota Central R&D Labs Inc 半導体装置とその製造方法、並びにトレンチゲートの製造方法
JP2009277774A (ja) * 2008-05-13 2009-11-26 Sharp Corp 半導体装置及びその製造方法
US20100181639A1 (en) * 2009-01-19 2010-07-22 Vanguard International Semiconductor Corporation Semiconductor devices and fabrication methods thereof
JP4886801B2 (ja) * 2009-03-02 2012-02-29 株式会社東芝 半導体装置の製造方法
TWI462175B (zh) * 2011-09-07 2014-11-21 華亞科技股份有限公司 調整半導體基板槽深的製造方法
JP6059048B2 (ja) * 2013-03-11 2017-01-11 東京エレクトロン株式会社 プラズマエッチング方法
US9230819B2 (en) * 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
CN104517890A (zh) * 2013-09-30 2015-04-15 中芯国际集成电路制造(上海)有限公司 快闪存储器的浅沟槽隔离结构的形成方法
KR102459430B1 (ko) * 2018-01-08 2022-10-27 삼성전자주식회사 반도체 소자 및 그 제조방법
CN116230529B (zh) * 2023-05-06 2023-07-11 合肥晶合集成电路股份有限公司 一种半导体结构的制造方法

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JP3407023B2 (ja) * 1999-05-10 2003-05-19 Necエレクトロニクス株式会社 半導体装置の製造方法
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US6569494B1 (en) * 2000-05-09 2003-05-27 3M Innovative Properties Company Method and apparatus for making particle-embedded webs
JP3403372B2 (ja) * 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
JP2002009178A (ja) * 2000-06-21 2002-01-11 Toshiba Corp 半導体装置の製造方法
JP2002043246A (ja) * 2000-07-27 2002-02-08 Nec Corp 半導体装置の製造方法
JP2005276931A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体装置およびその製造方法

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