JP2005259798A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2005259798A JP2005259798A JP2004065980A JP2004065980A JP2005259798A JP 2005259798 A JP2005259798 A JP 2005259798A JP 2004065980 A JP2004065980 A JP 2004065980A JP 2004065980 A JP2004065980 A JP 2004065980A JP 2005259798 A JP2005259798 A JP 2005259798A
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- JP
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- Prior art keywords
- schottky
- layer
- metal layer
- barrier diode
- metal
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- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 62
- 238000000034 method Methods 0.000 title description 8
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000002184 metal Substances 0.000 claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims description 25
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 36
- 239000010408 film Substances 0.000 description 14
- 239000012535 impurity Substances 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】 ショットキー金属層6に例えばTiに微量のAlを含有した金属層でショットキーバリアダイオードを構成することにより、純粋なTiの順方向電圧VFを大幅に増加させることなく、低IR化を実現できるので、順方向損失を抑え、逆方向損失を低減し、低消費電力化が図ることができる。
【選択図】 図1
Description
2 N−型半導体層
3 金属層
4 ガードリング領域
5 絶縁膜
7 アノード電極
8 カソード電極
13 金属層
D1 ショットキーバリアダイオード
D2 ショットキーバリアダイオード
Claims (6)
- 一導電型の半導体層と、
該半導体層表面とショットキー接合を形成する金属層と、
を少なくとも具備する半導体装置において、前記金属層はショットキー金属に微量のAlを含有する合金から構成される金属層であることを特徴とする半導体装置。 - 前記半導体層は、半導体基板上に形成されたエピタキシャル層であることを特徴とする請求項1に記載の半導体装置。
- 一導電型半導体基板と、
該半導体基板上に設けられた一導電型半導体層と、
該半導体層表面とショットキー接合を形成する金属層と、
を具備する半導体装置において、前記金属層はショットキー金属に微量のAlを含有することを特徴とする半導体装置。 - 前記ショトキー金属は、Tiであることを特徴とする請求項1から請求項3のいずれかに記載の半導体装置。
- 前記Alの濃度は、0.05wt.%〜0.5wt.%程度であることを特徴とする請求項4に記載の半導体装置。
- TiにAlが0.05wt.%〜0.5wt.%程度含有された合金と、少なくとも一部に半導体層が露出した半導体基板を用意し、
該半導体基板に前記合金から成る薄膜を形成する工程とを少なくとも有する半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004065980A JP4829476B2 (ja) | 2004-03-09 | 2004-03-09 | ショットキーバリアダイオードおよびその製造方法 |
TW093133780A TWI259579B (en) | 2004-03-09 | 2004-11-05 | Semiconductor device and method for manufacturing thereof |
CNB2005100041040A CN100370621C (zh) | 2004-03-09 | 2005-01-06 | 半导体装置及其制造方法 |
KR1020050006314A KR100624600B1 (ko) | 2004-03-09 | 2005-01-24 | 반도체 장치 및 그 제조 방법 |
US11/045,581 US7141861B2 (en) | 2004-03-09 | 2005-01-31 | Semiconductor device and manufacturing method there |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004065980A JP4829476B2 (ja) | 2004-03-09 | 2004-03-09 | ショットキーバリアダイオードおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005259798A true JP2005259798A (ja) | 2005-09-22 |
JP4829476B2 JP4829476B2 (ja) | 2011-12-07 |
Family
ID=34918290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004065980A Expired - Fee Related JP4829476B2 (ja) | 2004-03-09 | 2004-03-09 | ショットキーバリアダイオードおよびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7141861B2 (ja) |
JP (1) | JP4829476B2 (ja) |
KR (1) | KR100624600B1 (ja) |
CN (1) | CN100370621C (ja) |
TW (1) | TWI259579B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4610207B2 (ja) * | 2004-02-24 | 2011-01-12 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
US7250666B2 (en) | 2005-11-15 | 2007-07-31 | International Business Machines Corporation | Schottky barrier diode and method of forming a Schottky barrier diode |
US8787566B2 (en) | 2006-08-23 | 2014-07-22 | Red Hat, Inc. | Strong encryption |
US7750426B2 (en) * | 2007-05-30 | 2010-07-06 | Intersil Americas, Inc. | Junction barrier Schottky diode with dual silicides |
CN102142465A (zh) * | 2010-12-20 | 2011-08-03 | 杭州士兰集成电路有限公司 | 一种肖特基二极管的正面电极结构及其工艺制造方法 |
CN102569422B (zh) * | 2010-12-31 | 2015-08-26 | 比亚迪股份有限公司 | 一种肖特基整流器件及制造方法 |
US8937319B2 (en) * | 2011-03-07 | 2015-01-20 | Shindengen Electric Manufacturing Co., Ltd. | Schottky barrier diode |
KR102430498B1 (ko) | 2016-06-28 | 2022-08-09 | 삼성전자주식회사 | 쇼트키 다이오드를 갖는 전자 소자 |
CN110610982A (zh) * | 2019-08-30 | 2019-12-24 | 泰科天润半导体科技(北京)有限公司 | 一种肖特基二极管及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04291966A (ja) * | 1991-03-20 | 1992-10-16 | New Japan Radio Co Ltd | ショットキーバリア半導体装置 |
JPH06224410A (ja) * | 1993-01-22 | 1994-08-12 | Fuji Electric Co Ltd | ショットキーバリアダイオードの製造方法 |
JPH0897441A (ja) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
JP2004111759A (ja) * | 2002-09-20 | 2004-04-08 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69130041T2 (de) * | 1990-06-29 | 1999-02-18 | Canon Kk | Verfahren zum Herstellen einer Halbleiteranordnung mit Schottky-übergang |
US5747361A (en) * | 1991-05-01 | 1998-05-05 | Mitel Corporation | Stabilization of the interface between aluminum and titanium nitride |
US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
US6621107B2 (en) * | 2001-08-23 | 2003-09-16 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
-
2004
- 2004-03-09 JP JP2004065980A patent/JP4829476B2/ja not_active Expired - Fee Related
- 2004-11-05 TW TW093133780A patent/TWI259579B/zh not_active IP Right Cessation
-
2005
- 2005-01-06 CN CNB2005100041040A patent/CN100370621C/zh not_active Expired - Fee Related
- 2005-01-24 KR KR1020050006314A patent/KR100624600B1/ko not_active IP Right Cessation
- 2005-01-31 US US11/045,581 patent/US7141861B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04291966A (ja) * | 1991-03-20 | 1992-10-16 | New Japan Radio Co Ltd | ショットキーバリア半導体装置 |
JPH06224410A (ja) * | 1993-01-22 | 1994-08-12 | Fuji Electric Co Ltd | ショットキーバリアダイオードの製造方法 |
JPH0897441A (ja) * | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
JP2004111759A (ja) * | 2002-09-20 | 2004-04-08 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI259579B (en) | 2006-08-01 |
US20050199978A1 (en) | 2005-09-15 |
TW200531272A (en) | 2005-09-16 |
KR100624600B1 (ko) | 2006-09-20 |
CN1667833A (zh) | 2005-09-14 |
US7141861B2 (en) | 2006-11-28 |
JP4829476B2 (ja) | 2011-12-07 |
KR20050091620A (ko) | 2005-09-15 |
CN100370621C (zh) | 2008-02-20 |
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