JP2005210071A - 半導体基板ならびにその製造方法 - Google Patents
半導体基板ならびにその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 115
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 115
- 239000013078 crystal Substances 0.000 claims abstract description 99
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 58
- 230000003647 oxidation Effects 0.000 claims description 51
- 238000007254 oxidation reaction Methods 0.000 claims description 51
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- -1 oxygen ions Chemical class 0.000 claims description 4
- 238000004857 zone melting Methods 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 125000005842 heteroatom Chemical group 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 160
- 239000010408 film Substances 0.000 description 71
- 235000012431 wafers Nutrition 0.000 description 50
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000001947 vapour-phase growth Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
【解決手段】 半導体基板であって、ゲルマニウムを添加したシリコンからなる第一層と、これに隣接する酸化物からなる第二層と、さらに第二層に隣接するシリコン−ゲルマニウム混晶からなる第三層からなる半導体基板およびその製造方法である。
【選択図】 なし
Description
Oxygen)法(特許文献3)との組み合わせも提案されている。例えば特許文献4にあるように、シリコン基板上にシリコン−ゲルマニウム混晶を堆積し、その後酸素イオンを注入し、つづいて高温熱処理することによって、シリコン−ゲルマニウム混晶層中に埋め込み酸化膜を形成する方法が提案されている。また特許文献5にあるように、さらに高温で酸化してSOI膜厚を薄膜化する、いわゆるITOX法を組み合わせることによって、SOI層中のゲルマニウム濃度を濃化させ、高ゲルマニウム濃度を有するSGOIウェハを作成する方法も提案されている。
1)シリコン原料にゲルマニウムをドープして、チョクラルスキー法または帯域溶融法で単結晶を成長する工程と、
2)該単結晶からウェハを作成する工程と、
3)酸素イオンをイオン注入法によって注入する工程と、
4)高温熱処理によって埋め込み酸化膜を形成する工程と、
5)酸化性雰囲気中での熱酸化によって埋め込み酸化膜上の結晶層を薄膜化する工程
を含む工程を施すことを特徴とする半導体基板の製造方法である。
Tox2+A×Tox=B×t
の関係が成り立つことが知られている。Bは方物型速度定数と呼ばれる値であり、酸化時の温度、圧力、雰囲気で決定される。酸化中のゲルマニウムの深さ方向分布は下記の式によって計算できる。
以下に本発明の好ましい実施形態を詳細に説明する。なお以降に示すのゲルマニウム濃度は全てモル%で定義する。
シリコンおよびゲルマニウムを主原料として、チョクラルスキー法によってゲルマニウム組成比の異なる5本の単結晶棒を育成した。これらのうち無転位で育成できた4本の単結晶棒から、通常のシリコンウェハと同様に、スライス、ラップ、エッチング、研磨、洗浄を施し、鏡面ウェハに仕上げ、試験用のウェハを取り出した。これらのウェハから各水準1枚ずつを取り出して、SIMS(Secondary Ion Mass Spectroscopy)によってゲルマニウム濃度を測定した。この測定結果と育成直後の転位の有無を表1にまとめる。
実施例1で育成した結晶1〜4から取り出したウェハを用いて、実施例1と同じく水蒸気雰囲気中1150℃で16時間酸化し、酸素イオン注入と埋め込み酸化膜形成熱処理を施した。つづいて、この実施例では埋め込み酸化膜上の結晶層を10nmまで薄膜化した。酸化温度は結晶1〜3については1100℃、結晶4については1000℃とした。形成された酸化膜をフッ酸で除去した後、各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表3に示す。
実施例1と同じ無転位で育成できた結晶1〜4から取り出したウェハを用いて、水蒸気雰囲気中1200℃で2時間酸化した。形成された酸化膜厚は0.9μmであった。これら試料に、前述と同じ条件の酸素イオン注入と埋め込み酸化膜形成熱処理を施した。つづいて、埋め込み酸化膜上の結晶層を25nmまで薄膜化した。薄膜化時の酸化温度は実施例1と同じである。形成された酸化膜をフッ酸で除去した後、各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表4に示す。
実施例1と同じ結晶1〜4から取り出したウェハを用いて、水蒸気雰囲気中で1350℃で8時間酸化した。形成された酸化膜厚は2.4μmであった。これら試料に、前述と同じ条件の酸素イオン注入と埋め込み酸化膜形成熱処理を施した。つづいて、埋め込み酸化膜上の結晶層を25nmまで薄膜化した。酸化温度は1200℃とした。各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表5に示す。
実施例1と同じ無転位で育成できた結晶1〜4から取り出したウェハを用いて、水蒸気雰囲気中1250℃で20分酸化した。形成された酸化膜厚は0.4μmであった。これら試料に、前述と同じ条件の酸素イオン注入と埋め込み酸化膜形成熱処理を施した。つづいて、埋め込み酸化膜上の結晶層を25nmまで薄膜化した。酸化温度は1200℃とした。形成された酸化膜を除去した後、各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表6に示す。
実施例1と同じ無転位で育成できた結晶1〜4から取り出したウェハを用いて、水蒸気雰囲気中850℃で4時間酸化した。形成された酸化膜厚は0.3μmであった。これら試料に、前述と同じ条件の酸素イオン注入と埋め込み酸化膜形成熱処理を施した。つづいて、埋め込み酸化膜上の結晶層を25nmまで薄膜化した。酸化温度は1200℃とした。各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表7に示す。
実施例1と同じ無転位で育成できた結晶1〜4から取り出したウェハを用いて、乾燥酸素雰囲気中1200℃で1時間酸化した。形成された酸化膜厚は0.2μmであった。これら試料に、前述と同じ条件の酸素イオン注入と埋め込み酸化膜形成熱処理を施した。つづいて、埋め込み酸化膜上の結晶層を25nmまで薄膜化した。酸化温度は1200℃とした。各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表8に示す。
実施例1〜5と同じ無転位で育成できた結晶1〜3から取り出したウェハを用いて、水蒸気雰囲気中で1250℃で2時間酸化した。形成された酸化膜厚は1.0μmであった。これら試料に、前述と同じ条件の酸素イオン注入と埋め込み酸化膜形成熱処理を施した。つづいて、埋め込み酸化膜上の結晶層を70nmまで薄膜化した。酸化温度は結晶5から取り出したウェハについては1200℃、結晶6および7から取り出したウェハについては1100℃とした。各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表9に示す。
実施例1で育成した結晶3および4から取り出したウェハに酸素イオン注入と埋め込み酸化膜形成熱処理を施した。この実施例では酸素イオン注入前の酸化処理、酸化膜除去工程は行わなかった。つづいて、埋め込み酸化膜上の結晶層を酸化によって10nmまで薄膜化した。酸化温度は1100℃とした。形成された酸化膜をフッ酸で除去した後、各水準1枚ずつについて、SIMSによってSGOI層のゲルマニウム濃度を測定した。この結果を表10に示す。
実施例1で育成した結晶2から取り出したウェハを水蒸気雰囲気中1150℃で16時間酸化した。実施例1と同様に酸化膜厚は3.1μmであった。つづいて、低ドーズSIMOXプロセスを施し、さらに埋め込み酸化膜上の結晶層をITOXプロセスによって5nmまで薄膜化した。薄膜化した結晶層のゲルマニウム濃度を調べたところ、99%であった。表面酸化膜をエッチングした後、気相成長法でゲルマニウム膜を0.2μm堆積した。つづいて、断面TEMで結晶性を観察したところ、無転位で単結晶が成長できることが分かった。
Claims (24)
- 半導体基板であって、ゲルマニウムを添加したシリコンからなる第一層と、これに隣接する酸化物からなる第二層と、さらに第二層に隣接するシリコン−ゲルマニウム混晶からなる第三層からなることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第一層の厚みがウェハ厚みに相当することを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第一層のゲルマニウム濃度が0.05モル%以上かつ5%モル以下であり、望ましくは0.2モル%以上かつ1モル%以下であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第一層が単結晶であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第二層が電気的絶縁特性を有するシリコン酸化物であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第二層の厚みが少なくとも80nm以上であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層が単結晶であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層の厚みが1nm以上かつ50nm以下であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層のゲルマニウム濃度が15%以上かつ100%以下であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第一層中にCOPを含まないことを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層にCOPを含まないことを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層表面に到達する転位密度が1×105個/cm2以下であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層のラフネスが40×40μmのRMSで5nm以下であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層の厚みの変動が5%以下であるか、または2.5nm以下であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層中のゲルマニウム濃度の変動が5%以下であることを特徴とする半導体基板。
- 請求項1記載の半導体基板であって、該第三層に隣接して歪シリコン層が形成されてなることを特徴とする半導体基板。
- 半導体基板であって、ゲルマニウムを添加したシリコンからなる第一層と、これに隣接する酸化物からなる第二層と、第二層に隣接する第一層よりもゲルマニウム濃度が高いシリコン−ゲルマニウム混晶からなる第三層と、ゲルマニウム層である第四層からなることを特徴とする半導体基板。
- 半導体基板の製造方法であって、少なくとも
1)シリコン原料にゲルマニウムをドープして、チョクラルスキー法または帯域溶融法で単結晶を成長する工程と、
2)該単結晶からウェハを作成する工程と、
3)酸素イオンをイオン注入法によって注入する工程と、
4)高温熱処理によって埋め込み酸化膜を形成する工程と、
5)酸化性雰囲気中での熱酸化によって埋め込み酸化膜上の結晶層を薄膜化する工程を含む工程を施すことを特徴とする半導体基板の製造方法。 - 請求項18記載の半導体基板の製造方法であって、請求項18の工程2)の終了後、該ウェハを酸化性雰囲気で熱酸化し、つづいて表面に形成された酸化膜をエッチング、洗浄する工程を施した後、請求項18記載の工程3)以降を実施することを特徴とする半導体基板の製造方法。
- 請求項19の半導体基板の製造方法であって、熱酸化工程の酸化雰囲気に少なくとも水蒸気を含有することを特徴とする半導体基板の製造方法。
- 請求項20の半導体基板の製造方法であって、熱酸化工程において、温度が900℃以上かつ融点以下、かつ酸化時間が30分以上であることを特徴とする半導体基板の製造方法。
- 請求項21の半導体基板の製造方法であって、熱酸化工程において形成される酸化膜の厚みが1μm以上であることを特徴とする半導体基板の製造方法。
- 半導体基板の製造方法であって、請求項22によって作成した半導体基板に、さらに歪シリコン膜を気相成長法で堆積することを特徴とする半導体基板の製造方法。
- 半導体基板の製造方法であって、請求項18によって埋め込み酸化膜上の結晶層中のゲルマニウム濃度を95%以上となるように濃縮し、さらに気相成長法によってゲルマニウム膜を堆積することを特徴とする半導体基板の製造方法。
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FR2893446B1 (fr) * | 2005-11-16 | 2008-02-15 | Soitec Silicon Insulator Techn | TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE |
KR101323222B1 (ko) * | 2006-03-08 | 2013-10-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판상에 형성되는 구조체의 열적 프로세싱을 위한 장치 및 방법 |
US7569463B2 (en) | 2006-03-08 | 2009-08-04 | Applied Materials, Inc. | Method of thermal processing structures formed on a substrate |
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US20080025354A1 (en) * | 2006-07-31 | 2008-01-31 | Dean Jennings | Ultra-Fast Beam Dithering with Surface Acoustic Wave Modulator |
US7548364B2 (en) | 2006-07-31 | 2009-06-16 | Applied Materials, Inc. | Ultra-fast beam dithering with surface acoustic wave modulator |
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