JP2005183788A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
- Publication number
- JP2005183788A JP2005183788A JP2003424821A JP2003424821A JP2005183788A JP 2005183788 A JP2005183788 A JP 2005183788A JP 2003424821 A JP2003424821 A JP 2003424821A JP 2003424821 A JP2003424821 A JP 2003424821A JP 2005183788 A JP2005183788 A JP 2005183788A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- component
- mold
- formula
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 168
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 100
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 13
- 239000000945 filler Substances 0.000 claims abstract description 11
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000003054 catalyst Substances 0.000 claims abstract description 7
- -1 siloxane unit Chemical group 0.000 claims description 82
- 238000000748 compression moulding Methods 0.000 claims description 26
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 19
- 125000003342 alkenyl group Chemical group 0.000 claims description 19
- 150000002430 hydrocarbons Chemical group 0.000 claims description 11
- 239000004793 Polystyrene Substances 0.000 claims description 7
- 229920002223 polystyrene Polymers 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 229910020489 SiO3 Inorganic materials 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 20
- 230000006835 compression Effects 0.000 abstract description 3
- 238000007906 compression Methods 0.000 abstract description 3
- 239000011800 void material Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 description 46
- 229920005989 resin Polymers 0.000 description 31
- 239000011347 resin Substances 0.000 description 31
- 229920002379 silicone rubber Polymers 0.000 description 29
- 239000004945 silicone rubber Substances 0.000 description 29
- 239000000843 powder Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 125000000217 alkyl group Chemical group 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 7
- 150000003961 organosilicon compounds Chemical class 0.000 description 7
- 238000004804 winding Methods 0.000 description 7
- 125000003710 aryl alkyl group Chemical group 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- 125000003545 alkoxy group Chemical group 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 229910021485 fumed silica Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 125000005375 organosiloxane group Chemical group 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- HMVBQEAJQVQOTI-SOFGYWHQSA-N (e)-3,5-dimethylhex-3-en-1-yne Chemical compound CC(C)\C=C(/C)C#C HMVBQEAJQVQOTI-SOFGYWHQSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
- KSLSOBUAIFEGLT-UHFFFAOYSA-N 2-phenylbut-3-yn-2-ol Chemical compound C#CC(O)(C)C1=CC=CC=C1 KSLSOBUAIFEGLT-UHFFFAOYSA-N 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241001050985 Disco Species 0.000 description 1
- 229920001875 Ebonite Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920006026 co-polymeric resin Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- DDJSWKLBKSLAAZ-UHFFFAOYSA-N cyclotetrasiloxane Chemical compound O1[SiH2]O[SiH2]O[SiH2]O[SiH2]1 DDJSWKLBKSLAAZ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012765 fibrous filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000005417 glycidoxyalkyl group Chemical group 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MASVKQBLNPTZME-UHFFFAOYSA-N hex-2-en-4-yne Chemical compound CC=CC#CC MASVKQBLNPTZME-UHFFFAOYSA-N 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000001367 organochlorosilanes Chemical class 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 239000003223 protective agent Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000012763 reinforcing filler Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- FBEIPJNQGITEBL-UHFFFAOYSA-J tetrachloroplatinum Chemical compound Cl[Pt](Cl)(Cl)Cl FBEIPJNQGITEBL-UHFFFAOYSA-J 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
- H01L21/566—Release layers for moulds, e.g. release layers, layers against residue during moulding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
【解決手段】 半導体装置を金型中に載置して、該金型と該半導体装置との間に供給した硬化性シリコーン組成物を圧縮成形することによりシリコーン硬化物で封止した半導体装置を製造する方法であって、前記硬化性シリコーン組成物が、(A)一分子中に少なくとも2個のアルケニル基を有するオルガノポリシロキサン、(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン、(C)白金系触媒、および(D)充填剤から少なくともなり、前記(A)成分と前記(B)成分の少なくとも一方がT単位シロキサンおよび/またはQ単位シロキサンを有することを特徴とする、半導体装置の製造方法。
【選択図】 図1
Description
また、本発明の半導体装置は、上記の方法により製造されたことを特徴とする。
本方法では、半導体装置を金型中に載置して、該金型と該半導体装置との間に供給した硬化性シリコーン組成物を圧縮成形することにより、半導体装置をシリコーン硬化物で封止する。このような金型を有する圧縮成形機としては、一般に使用されている圧縮成形機を用いることができ、半導体装置を挟持して、金型と半導体装置のキャビティに供給された硬化性シリコーン組成物を圧縮成形することのできる上型と下型、これらを加圧するためのクランプ、硬化性シリコーン組成物を加熱により硬化させるためのヒーター等を備えていればよい。このような圧縮成形機としては、特開平8−244064号公報、特開平11−77733号公報、あるいは特開2000−277551号公報に記載されている圧縮成形機が例示され、特に、装置が簡単であることから、特開2000−277551号公報により記載されている圧縮成形機であることが好ましい。
で示されるシロキサン化合物、式:
で示されるシロキサン化合物が例示される。上記組成物において、この接着促進剤の含有量は限定されないが、(A)成分100重量部に対して0.01〜10重量部の範囲内であることが好ましい。
本発明の半導体装置は、上記の方法により製造されたことを特徴とする。このような半導体装置は、封止材にボイドの混入がないので、外観不良や耐湿性の低下を招来することがない。また、本発明の半導体装置は、封止樹脂の厚さが精度良くコントロールされているので、電子機器の小型化、薄型化に対応することができる。
目視により、シリコーン硬化物あるいはエポキシ樹脂硬化物で封止した半導体装置の表面を観察し、完全に充填されて表面が全体的に平滑である場合を○、表面の一部が平滑でない場合を△、表面が全体的に平滑でない場合を×、端部が未充填となった場合を××として示した。
半導体装置を個片に切断する前の、シリコーン硬化物あるいはエポキシ樹脂硬化物で封止した回路基板の長辺側を固定した時の他端長辺側の高さを測定し、これを反りとして示した。
シリコーン硬化物で樹脂封止した回路基板を個別の半導体装置に個片化するために、ソーイング装置(ディスコ社製、CSカッター使用、15,000rpm)で切断した際、バリが10μm以下では○、バリが10〜25μmである時には△、25μm以上のバリが出た場合を×、25μm以上のバリが多数出た場合を××とした。
・オルガノポリシロキサン(A−1):標準ポリスチレン換算の重量平均分子量が4,600であり、平均組成式:
[(CH2=CH)(CH3)2SiO1/2]0.43[(CH3)3SiO1/2]0.02(SiO4/2)0.55
で表されるシリコーンレンジン
・オルガノポリシロキサン(A−2):標準ポリスチレン換算の重量平均分子量が1,100であり、平均組成式:
[(CH2=CH)(CH3)2SiO1/2]0.50[(CH3)3SiO1/2]0.15(SiO4/2)0.35
で表されるシリコーンレンジン
・オルガノポリシロキサン(A−3):粘度40Pa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン
・オルガノポリシロキサン(A−4):粘度2,100mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン
・オルガノポリシロキサン(B−1):粘度40mPa・sの分子鎖両末端トリメチルシロキシ基封鎖メチルハイドロジェンポリシロキサン
・白金系触媒(C−1):白金の1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン錯体の1,3−ジビニル−1,1,3,3−テトラメチルジシロキサン溶液
・充填剤(D−1):平均粒子径0.5μmの球状シリカ微粉末
・充填剤(D−2):平均粒子径8μmの球状シリカ微粉末
・充填剤(D−3):平均粒子径10μmの球状アルミナ微粉末
・充填剤(D−4):BET比表面積が200m2/gであるヒュームドシリカ
・硬化抑制剤:2−フェニル−3−ブチン−2−オール
・接着促進剤:平均単位式:
・顔料:カーボンブラック
シリコーンゴム組成物の25℃における粘度をBS型回転粘度計(株式会社トキメック製のビスコメーター モデルBS、ローター:No.7、回転数:2.5rpm)により測定した。
シリコーンゴム組成物の硬化性をキュラストメーター(ジェイエスアール社製)により各測定温度(80℃、100℃、および120℃)で測定した。なお、上下金型を閉めた後に架橋によるトルクが検出され始める時間をIP値(秒)とし、最終硬化到達トルクの90%に当たるトルク値になる時間をT90値(秒)とした。
シリコーンゴム組成物を120℃で30kgf/cm2の荷重を掛けて5分間圧縮成形した後、さらに120℃のオーブン中で1時間加熱処理することによりシリコーンゴムを作製した。このシリコーンゴムの25℃における複素弾性率を、粘弾性測定機(せん断周波数:1Hz、歪み率:0.5%)により測定した。
上記と同様にして作製したシリコーンゴムの熱膨張率を、サーマルメカニカルアナライザー(TMA)により測定した。なお、測定温度範囲は50〜150℃である。
本実施例において、図3で示した半導体装置を作製した。すなわち、70mm×160mmサイズのポリイミド樹脂製の回路基板(厚さ75μmのポリイミド樹脂フィルムの片面に、厚さ17μmのエポキシ樹脂製接着剤層を介して厚さ18μmの銅箔が積層されており、この銅箔により回路パターンが形成され、この回路パターンのワイヤボンディングするための部分を除き、回路基板の表面は感光性ソルダーマスクにより被覆されている。)に厚さ35μmのエポキシ樹脂製ダイボンド剤層を介して8mm×14mmサイズの半導体チップを接合した。次に、この半導体チップのバンプと回路パターンとを電気的に接続するため48本の金製ボンディングワイヤによりワイヤボンディングした。この回路基板には、合わせて54個の半導体チップが18個ずつ3ブロックに分けて実装されており、それぞれ回路パターンにワイヤーボンディングされている。
実施例1において、シリコーンゴム組成物(I)の代わりに、表1で示す組成からなる2液型シリコーンゴム組成物のA液とB液をスタチックミキサハンドガンにより重量比で1:1に混合したシリコーンゴム組成物(II)を用いた以外は実施例1と同様にして半導体装置を作製した。この半導体装置の特性を表4に示した。
実施例1において、シリコーンゴム組成物(I)の代わりに、表2で示す組成からなる1液型シリコーンゴム組成物(III)を用いて、120℃で50kgf/cm2の荷重をかけて4分間圧縮成形した後、さらに120℃のオーブンで1時間加熱処理した以外は実施例1と同様にして半導体装置を作製した。この半導体装置の特性を表4に示した。
実施例1において、シリコーンゴム組成物(I)の代わりに、表2で示す組成からなる1液型シリコーンゴム組成物(IV)を用いて、120℃で50kgf/cm2の荷重をかけて4分間圧縮成形した後、さらに120℃のオーブンで1時間加熱処理した以外は実施例1と同様にして半導体装置を作製した。この半導体装置の特性を表4に示した。
実施例1において、シリコーンゴム組成物(I)の代わりに、表2で示す組成からなる1液型シリコーンゴム組成物(V)を用いて、120℃で50kgf/cm2の荷重をかけて4分間圧縮成形した後、さらに120℃のオーブンで1時間加熱処理した以外は実施例1と同様にして半導体装置を作製した。この半導体装置の特性を表4に示した。
実施例1において、シリコーンゴム組成物(I)の代わりに、表3で示す特性を有する液状硬化性エポキシ樹脂組成物(日立化成工業株式会社製のCEL−C−7400)を用いて、170℃で50kgf/cm2の荷重をかけて5分間圧縮成形した後、さらに150℃のオーブンで1時間加熱処理した以外は実施例1と同様にして、半導体チップ表面上を厚さ400μmのエポキシ樹脂硬化物で封止した半導体装置を作製した。この半導体装置の特性を表4に示した。
また、エポキシ樹脂硬化物は、液状硬化性エポキシ樹脂組成物を170℃で50kgf/cm2の荷重を掛けて5分間圧縮成形した後、さらに150℃のオーブン中で1時間加熱処理することにより作製し、この硬さはJIS K 6253に規定のタイプAデュロメータにより測定し、この25℃における複素弾性率は、粘弾性測定機(せん断周波数:1Hz、歪み率:0.5%)により測定し、また、この熱膨張率は、サーマルメカニカルアナライザー(TMA)により、室温〜90℃の温度範囲における値を測定した。
12 回路基板
16 半導体装置
20 固定プラテン
22 下型ベース
23 下型
24 ヒータ
26 下クランプストッパ
30 可動プラテン
32 上型ベース
33 上型ホルダ
34 上型
34a キャビティ凹部
36 クランパ
36a、36b エア孔
37 スプリング
38 ヒータ
39 上クランプストッパ
40a、40b 剥離性フィルム
42a、42b 供給ロール
44a、44b 巻取りロール
46 ガイドローラ
48 静電除去装置
50 硬化性シリコーン組成物
70 シリコーン硬化物で封止した半導体装置
72 シリコーン硬化物
Claims (12)
- 半導体装置を金型中に載置して、該金型と該半導体装置との間に供給した硬化性シリコーン組成物を圧縮成形することによりシリコーン硬化物で封止した半導体装置を製造する方法であって、前記硬化性シリコーン組成物が、(A)一分子中に少なくとも2個のアルケニル基を有するオルガノポリシロキサン、(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン、(C)白金系触媒、および(D)充填剤から少なくともなり、前記(A)成分が、式:RSiO3/2(式中、Rは一価炭化水素基である。)で示されるシロキサン単位および/または式:SiO4/2で示されるシロキサン単位を有するか、前記(B)成分が、式:R'SiO3/2(式中、R'は脂肪族不飽和炭素−炭素結合を有さない一価炭化水素基または水素原子である。)で示されるシロキサン単位および/または式:SiO4/2で示されるシロキサン単位を有するか、または前記(A)と前記(B)成分のいずれもが前記シロキサン単位を有することを特徴とする、半導体装置の製造方法。
- (A)成分が、式:RSiO3/2(式中、Rは一価炭化水素基である。)で示されるシロキサン単位および/または式:SiO4/2で示されるシロキサン単位を有し、かつ、標準ポリスチレン換算の重量平均分子量が1,500以上であるか、(B)成分が、式:R'SiO3/2(式中、R'は脂肪族不飽和炭素−炭素結合を有さない一価炭化水素基または水素原子である。)で示されるシロキサン単位および/または式:SiO4/2で示されるシロキサン単位を有し、かつ、標準ポリスチレン換算の重量平均分子量が1,500以上であるか、または前記(A)と前記(B)成分のいずれもが前記シロキサン単位を有し、かつ、標準ポリスチレン換算の重量平均分子量が1,500以上であることを特徴とする、請求項1記載の製造方法。
- (D)成分の含有量が、硬化性シリコーン組成物中の60重量%以上であることを特徴とする、請求項1記載の製造方法。
- 硬化性シリコーン組成物が、(A)成分、(C)成分、および(D)成分を主成分とし、(B)成分を含まない組成物と、(B)成分、および(D)成分を主成分とし、(C)成分を含まない組成物の二液型組成物を混合したものであることを特徴とする、請求項1記載の製造方法。
- 下型に半導体装置を載置して、上型と半導体装置との間に硬化性シリコーン組成物を供給した後、前記上型と前記下型とで前記半導体装置を挟持して前記硬化性シリコーン組成物を圧縮成形することを特徴とする、請求項1記載の製造方法。
- シリコーン硬化物の複素弾性率が1GPa以下であることを特徴とする、請求項1記載の製造方法。
- 少なくとも2つの半導体装置をシリコーン硬化物で封止した後、個片の半導体装置に切断することを特徴とする、請求項1記載の製造方法。
- 半導体装置が、回路基板上に半導体チップをボンディングワイヤにより電気的に接続したものであることを特徴とする、請求項1記載の製造方法。
- 回路基板の半導体チップを搭載した面に硬化性シリコーン組成物を供給して、半導体チップおよび該チップのボンディングワイヤーとの接続部をシリコーン硬化物で封止することを特徴とする、請求項8記載の製造方法。
- 金型の内面に剥離性フィルムを密着していることを特徴とする、請求項1記載の製造方法。
- 剥離性フィルムがエア吸引により金型の内面に密着していることを特徴とする、請求項10記載の製造方法。
- 請求項1乃至11のいずれか1項に記載の方法により製造された半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003424821A JP5101788B2 (ja) | 2003-12-22 | 2003-12-22 | 半導体装置の製造方法および半導体装置 |
PCT/JP2004/018548 WO2005062368A1 (en) | 2003-12-22 | 2004-12-07 | Semiconductor device and method of manufacturing thereof |
CNB2004800385140A CN100409420C (zh) | 2003-12-22 | 2004-12-07 | 半导体器件及其制造方法 |
US10/584,032 US7651958B2 (en) | 2003-12-22 | 2004-12-07 | Semiconductor device and method of manufacturing thereof |
EP04801693A EP1709673B1 (en) | 2003-12-22 | 2004-12-07 | Semiconductor device and method of manufacturing thereof |
KR1020067012535A KR101313671B1 (ko) | 2003-12-22 | 2004-12-07 | 반도체 소자 및 이의 제조방법 |
TW093137977A TWI354336B (en) | 2003-12-22 | 2004-12-08 | Semiconductor device and method of manufacturing t |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003424821A JP5101788B2 (ja) | 2003-12-22 | 2003-12-22 | 半導体装置の製造方法および半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005183788A true JP2005183788A (ja) | 2005-07-07 |
JP5101788B2 JP5101788B2 (ja) | 2012-12-19 |
Family
ID=34708797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003424821A Expired - Lifetime JP5101788B2 (ja) | 2003-12-22 | 2003-12-22 | 半導体装置の製造方法および半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7651958B2 (ja) |
EP (1) | EP1709673B1 (ja) |
JP (1) | JP5101788B2 (ja) |
KR (1) | KR101313671B1 (ja) |
CN (1) | CN100409420C (ja) |
TW (1) | TWI354336B (ja) |
WO (1) | WO2005062368A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007224146A (ja) * | 2006-02-23 | 2007-09-06 | Dow Corning Toray Co Ltd | 半導体装置の製造方法および半導体装置 |
JP2008063542A (ja) * | 2006-09-11 | 2008-03-21 | Dow Corning Toray Co Ltd | 硬化性シリコーン組成物および電子部品 |
KR100943713B1 (ko) * | 2006-10-16 | 2010-02-23 | 롬 앤드 하아스 컴패니 | 내열성 아릴 폴리실록산 조성물 |
US8338527B2 (en) | 2005-04-27 | 2012-12-25 | Dow Corning Toray Company, Ltd. | Curable silicone composition and electronic components |
JP2014241427A (ja) * | 2008-06-06 | 2014-12-25 | コーニンクレッカ フィリップス エヌ ヴェ | シリコーンラバー状材料及びシリコーンラバー状材料を形成する部分一式 |
JP2016100375A (ja) * | 2014-11-19 | 2016-05-30 | アピックヤマダ株式会社 | 樹脂モールド装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5392805B2 (ja) * | 2005-06-28 | 2014-01-22 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン樹脂組成物および光学部材 |
JP4623322B2 (ja) * | 2007-12-26 | 2011-02-02 | 信越化学工業株式会社 | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法 |
US7829004B2 (en) * | 2008-07-15 | 2010-11-09 | Asm Technology Singapore Pte Ltd | Transfer molding method and system for electronic devices |
JP4911143B2 (ja) * | 2008-08-15 | 2012-04-04 | 信越化学工業株式会社 | 高温耐性接着剤組成物、基板の接着方法、及び3次元半導体装置 |
JP2010153095A (ja) * | 2008-12-24 | 2010-07-08 | Showa Shinku:Kk | イオンガン |
US8427269B1 (en) * | 2009-06-29 | 2013-04-23 | VI Chip, Inc. | Encapsulation method and apparatus for electronic modules |
DE102010047454A1 (de) * | 2010-10-04 | 2012-04-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Silikonfolie, Silikonfolie und optoelektronisches Halbleiterbauteil mit einer Silikonfolie |
US20140346686A1 (en) * | 2011-09-02 | 2014-11-27 | Fu Peng | Methods for forming color images on memory devices and memory devices formed thereby |
US8875978B2 (en) * | 2012-02-11 | 2014-11-04 | International Business Machines Corporation | Forming constant diameter spherical metal balls |
JP2013232580A (ja) * | 2012-05-01 | 2013-11-14 | Dow Corning Toray Co Ltd | 熱硬化性フィルム状シリコーン封止材 |
US10629457B2 (en) * | 2012-06-08 | 2020-04-21 | Hitachi Chemical Company, Ltd. | Method for manufacturing semiconductor device |
JP2014082284A (ja) | 2012-10-15 | 2014-05-08 | Dow Corning Toray Co Ltd | 凸状硬化物及び基材を備える一体化物の製造方法 |
US9470395B2 (en) | 2013-03-15 | 2016-10-18 | Abl Ip Holding Llc | Optic for a light source |
CA3015068C (en) | 2013-05-10 | 2019-07-16 | Abl Ip Holding Llc | Silicone optics |
JP6298719B2 (ja) * | 2014-06-09 | 2018-03-20 | Towa株式会社 | 樹脂封止装置及び樹脂封止方法 |
CN106449513B (zh) * | 2016-11-11 | 2023-04-21 | 华南理工大学 | 一种防过热csp荧光膜片模压装置及方法 |
KR102522180B1 (ko) * | 2019-10-30 | 2023-04-14 | 주식회사 엘지화학 | 열전도성을 갖는 실리콘 수지 조성물 |
TWI742840B (zh) * | 2020-09-08 | 2021-10-11 | 友厚新科技股份有限公司 | 晶片貼膠方法及其裝置 |
CN114400189B (zh) * | 2022-03-25 | 2022-06-21 | 深圳市铨天科技有限公司 | 一种存储芯片的固化封装设备 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064027A (en) * | 1973-09-28 | 1977-12-20 | Dow Corning Corporation | UV curable composition |
JPS55110155A (en) * | 1979-02-16 | 1980-08-25 | Toray Silicone Co Ltd | Organopolysiloxane composition forming releasable film |
JPH06145525A (ja) | 1992-11-05 | 1994-05-24 | Toray Dow Corning Silicone Co Ltd | 硬化性オルガノポリシロキサン組成物 |
JP2739407B2 (ja) * | 1993-02-09 | 1998-04-15 | 信越化学工業株式会社 | 低弾性率シリコーンゲル組成物及びそのゲル状硬化物 |
JP3516764B2 (ja) | 1995-03-08 | 2004-04-05 | アピックヤマダ株式会社 | リリースフィルムを用いる樹脂モールド装置及び樹脂モールド方法 |
JP3592825B2 (ja) * | 1996-02-07 | 2004-11-24 | 東レ・ダウコーニング・シリコーン株式会社 | 硬化性エポキシ樹脂組成物および電子部品 |
JPH1177733A (ja) | 1997-09-01 | 1999-03-23 | Apic Yamada Kk | 樹脂モールド方法及び樹脂モールド装置 |
JP3494586B2 (ja) | 1999-03-26 | 2004-02-09 | アピックヤマダ株式会社 | 樹脂封止装置及び樹脂封止方法 |
JP2002265786A (ja) * | 2001-03-09 | 2002-09-18 | Dow Corning Toray Silicone Co Ltd | 硬化性オルガノポリシロキサン組成物、および半導体装置の製造方法 |
US6509423B1 (en) * | 2001-08-21 | 2003-01-21 | Dow Corning Corporation | Silicone composition and cured silicone product |
-
2003
- 2003-12-22 JP JP2003424821A patent/JP5101788B2/ja not_active Expired - Lifetime
-
2004
- 2004-12-07 EP EP04801693A patent/EP1709673B1/en active Active
- 2004-12-07 US US10/584,032 patent/US7651958B2/en active Active
- 2004-12-07 KR KR1020067012535A patent/KR101313671B1/ko active IP Right Grant
- 2004-12-07 CN CNB2004800385140A patent/CN100409420C/zh active Active
- 2004-12-07 WO PCT/JP2004/018548 patent/WO2005062368A1/en active Application Filing
- 2004-12-08 TW TW093137977A patent/TWI354336B/zh active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8338527B2 (en) | 2005-04-27 | 2012-12-25 | Dow Corning Toray Company, Ltd. | Curable silicone composition and electronic components |
JP2007224146A (ja) * | 2006-02-23 | 2007-09-06 | Dow Corning Toray Co Ltd | 半導体装置の製造方法および半導体装置 |
WO2007099823A1 (en) | 2006-02-23 | 2007-09-07 | Dow Corning Toray Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device produced thereby |
US8802506B2 (en) | 2006-02-23 | 2014-08-12 | Dow Corning Toray Company, Ltd. | Method of manufacturing a semiconductor device and a semiconductor device produced thereby |
JP2008063542A (ja) * | 2006-09-11 | 2008-03-21 | Dow Corning Toray Co Ltd | 硬化性シリコーン組成物および電子部品 |
US8273815B2 (en) | 2006-09-11 | 2012-09-25 | Dow Corning Toray Company, Ltd. | Curable silicone composition and electronic component |
KR100943713B1 (ko) * | 2006-10-16 | 2010-02-23 | 롬 앤드 하아스 컴패니 | 내열성 아릴 폴리실록산 조성물 |
JP2014241427A (ja) * | 2008-06-06 | 2014-12-25 | コーニンクレッカ フィリップス エヌ ヴェ | シリコーンラバー状材料及びシリコーンラバー状材料を形成する部分一式 |
JP2016100375A (ja) * | 2014-11-19 | 2016-05-30 | アピックヤマダ株式会社 | 樹脂モールド装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1709673A1 (en) | 2006-10-11 |
EP1709673B1 (en) | 2013-03-13 |
TW200536026A (en) | 2005-11-01 |
US7651958B2 (en) | 2010-01-26 |
TWI354336B (en) | 2011-12-11 |
KR101313671B1 (ko) | 2013-10-02 |
WO2005062368A1 (en) | 2005-07-07 |
US20070216021A1 (en) | 2007-09-20 |
JP5101788B2 (ja) | 2012-12-19 |
CN100409420C (zh) | 2008-08-06 |
CN1898786A (zh) | 2007-01-17 |
KR20070003800A (ko) | 2007-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5101788B2 (ja) | 半導体装置の製造方法および半導体装置 | |
KR101349619B1 (ko) | 반도체 장치의 제조방법 및 이로부터 제조한 반도체 장치 | |
JP4676735B2 (ja) | 光半導体装置の製造方法および光半導体装置 | |
JP4607429B2 (ja) | 半導体装置の製造方法および半導体装置 | |
JP3420473B2 (ja) | シリコーン系接着性シート、その製造方法、および半導体装置 | |
JP2004043814A (ja) | シリコーン系接着性シート、半導体チップと該チップ取付部の接着方法、および半導体装置 | |
KR101168861B1 (ko) | 반도체 장치 및 이의 제조방법 | |
CN111433307A (zh) | 有机硅系接着片、含有其的积层体、半导体装置的制造方法 | |
KR20150013761A (ko) | 캡슐화된 반도체 소자의 제조 방법 및 캡슐화된 반도체 소자 | |
JP4775993B2 (ja) | 半導体素子封止剤、半導体装置および半導体装置の実装方法 | |
KR20240051216A (ko) | 경화성 실리콘 조성물, 그의 경화물, 및 그의 제조방법 | |
KR20240046792A (ko) | 경화성 실리콘 조성물, 그의 경화물 및 그의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090623 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090929 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120927 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151005 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5101788 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |