JP2005167275A5 - - Google Patents

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Publication number
JP2005167275A5
JP2005167275A5 JP2005015790A JP2005015790A JP2005167275A5 JP 2005167275 A5 JP2005167275 A5 JP 2005167275A5 JP 2005015790 A JP2005015790 A JP 2005015790A JP 2005015790 A JP2005015790 A JP 2005015790A JP 2005167275 A5 JP2005167275 A5 JP 2005167275A5
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JP
Japan
Prior art keywords
underlayer
less
substrate
conductive layer
layer
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Pending
Application number
JP2005015790A
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English (en)
Japanese (ja)
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JP2005167275A (ja
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Priority to JP2005015790A priority Critical patent/JP2005167275A/ja
Priority claimed from JP2005015790A external-priority patent/JP2005167275A/ja
Publication of JP2005167275A publication Critical patent/JP2005167275A/ja
Publication of JP2005167275A5 publication Critical patent/JP2005167275A5/ja
Pending legal-status Critical Current

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JP2005015790A 2000-12-07 2005-01-24 半導体素子 Pending JP2005167275A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005015790A JP2005167275A (ja) 2000-12-07 2005-01-24 半導体素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000373039 2000-12-07
JP2001153693 2001-05-23
JP2005015790A JP2005167275A (ja) 2000-12-07 2005-01-24 半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001267299A Division JP3836697B2 (ja) 2000-12-07 2001-09-04 半導体素子

Publications (2)

Publication Number Publication Date
JP2005167275A JP2005167275A (ja) 2005-06-23
JP2005167275A5 true JP2005167275A5 (enrdf_load_stackoverflow) 2007-03-22

Family

ID=34743337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005015790A Pending JP2005167275A (ja) 2000-12-07 2005-01-24 半導体素子

Country Status (1)

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JP (1) JP2005167275A (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8062780B2 (en) 2005-03-17 2011-11-22 Nec Corporation Film-covered electric device and method of manufacturing same
US7641735B2 (en) 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
EP1978550A4 (en) 2005-12-28 2009-07-22 Nec Corp FIELD EFFECT TRANSISTOR AND MULTILAYER EPITAXIAL FILM FOR USE IN THE MANUFACTURE OF A FIELD EFFECT TRANSISTOR
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
JP2007273843A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 成膜方法、半導体層、及び半導体素子
JP2008053703A (ja) * 2006-07-28 2008-03-06 Kanagawa Acad Of Sci & Technol ＡｌＮ層およびＡｌＧａＮ層並びにそれらの製造方法
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (en) 2007-01-17 2008-07-24 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
JP2008205221A (ja) * 2007-02-20 2008-09-04 Furukawa Electric Co Ltd:The 半導体素子
JP4888537B2 (ja) 2009-08-28 2012-02-29 住友電気工業株式会社 Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
CN103038400B (zh) 2010-06-30 2016-06-22 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP5416754B2 (ja) * 2011-11-15 2014-02-12 フューチャー ライト リミテッド ライアビリティ カンパニー 半導体基板およびその製造方法
JP2012064977A (ja) * 2011-12-15 2012-03-29 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
US20150280057A1 (en) 2013-03-15 2015-10-01 James R. Grandusky Methods of forming planar contacts to pseudomorphic electronic and optoelectronic devices
US10636663B2 (en) 2017-03-29 2020-04-28 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
US12002881B2 (en) 2017-07-20 2024-06-04 Swegan Ab Heterostructure for a high electron mobility transistor and a method of producing the same

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