JP2005167275A - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP2005167275A
JP2005167275A JP2005015790A JP2005015790A JP2005167275A JP 2005167275 A JP2005167275 A JP 2005167275A JP 2005015790 A JP2005015790 A JP 2005015790A JP 2005015790 A JP2005015790 A JP 2005015790A JP 2005167275 A JP2005167275 A JP 2005167275A
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JP
Japan
Prior art keywords
underlayer
less
substrate
semiconductor element
nitride semiconductor
Prior art date
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Application number
JP2005015790A
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English (en)
Japanese (ja)
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JP2005167275A5 (enrdf_load_stackoverflow
Inventor
Yuji Hori
裕二 堀
Tomohiko Shibata
智彦 柴田
Mitsuhiro Tanaka
光浩 田中
Osamu Oda
修 小田
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NGK Insulators Ltd
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NGK Insulators Ltd
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Publication date
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Priority to JP2005015790A priority Critical patent/JP2005167275A/ja
Publication of JP2005167275A publication Critical patent/JP2005167275A/ja
Publication of JP2005167275A5 publication Critical patent/JP2005167275A5/ja
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP2005015790A 2000-12-07 2005-01-24 半導体素子 Pending JP2005167275A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005015790A JP2005167275A (ja) 2000-12-07 2005-01-24 半導体素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000373039 2000-12-07
JP2001153693 2001-05-23
JP2005015790A JP2005167275A (ja) 2000-12-07 2005-01-24 半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001267299A Division JP3836697B2 (ja) 2000-12-07 2001-09-04 半導体素子

Publications (2)

Publication Number Publication Date
JP2005167275A true JP2005167275A (ja) 2005-06-23
JP2005167275A5 JP2005167275A5 (enrdf_load_stackoverflow) 2007-03-22

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JP2005015790A Pending JP2005167275A (ja) 2000-12-07 2005-01-24 半導体素子

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JP (1) JP2005167275A (enrdf_load_stackoverflow)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273843A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 成膜方法、半導体層、及び半導体素子
JP2008053703A (ja) * 2006-07-28 2008-03-06 Kanagawa Acad Of Sci & Technol ＡｌＮ層およびＡｌＧａＮ層並びにそれらの製造方法
JP2008205221A (ja) * 2007-02-20 2008-09-04 Furukawa Electric Co Ltd:The 半導体素子
JP2010517298A (ja) * 2007-01-26 2010-05-20 クリスタル・イズ，インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
JP2012041269A (ja) * 2011-11-15 2012-03-01 Sanyo Electric Co Ltd 半導体基板およびその製造方法
JP2012064977A (ja) * 2011-12-15 2012-03-29 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
US8178226B2 (en) 2005-03-17 2012-05-15 Nec Corporation Film-covered electric device and method of manufacturing same
US8633514B2 (en) 2009-08-28 2014-01-21 Sumitomo Electric Industries, Ltd. Group III nitride semiconductor wafer and group III nitride semiconductor device
US8853666B2 (en) 2005-12-28 2014-10-07 Renesas Electronics Corporation Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
US9028612B2 (en) 2010-06-30 2015-05-12 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US9299880B2 (en) 2013-03-15 2016-03-29 Crystal Is, Inc. Pseudomorphic electronic and optoelectronic devices having planar contacts
US9447519B2 (en) 2006-03-30 2016-09-20 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them
US9447521B2 (en) 2001-12-24 2016-09-20 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US9525032B2 (en) 2005-12-02 2016-12-20 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US9624601B2 (en) 2007-01-17 2017-04-18 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US10074784B2 (en) 2011-07-19 2018-09-11 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US10446391B2 (en) 2007-01-26 2019-10-15 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
US10636663B2 (en) 2017-03-29 2020-04-28 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
JP2020530939A (ja) * 2017-07-20 2020-10-29 スウェガン、アクチボラグＳｗｅｇａｎ Ａｂ 高電子移動度トランジスタのためのヘテロ構造及びその製造方法

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9447521B2 (en) 2001-12-24 2016-09-20 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US8178226B2 (en) 2005-03-17 2012-05-15 Nec Corporation Film-covered electric device and method of manufacturing same
US9525032B2 (en) 2005-12-02 2016-12-20 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US9954087B2 (en) 2005-12-28 2018-04-24 Renesas Electronics Corporation Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
US8853666B2 (en) 2005-12-28 2014-10-07 Renesas Electronics Corporation Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
US9447519B2 (en) 2006-03-30 2016-09-20 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them
JP2007273843A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 成膜方法、半導体層、及び半導体素子
JP2008053703A (ja) * 2006-07-28 2008-03-06 Kanagawa Acad Of Sci & Technol ＡｌＮ層およびＡｌＧａＮ層並びにそれらの製造方法
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9670591B2 (en) 2007-01-17 2017-06-06 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US9624601B2 (en) 2007-01-17 2017-04-18 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US10446391B2 (en) 2007-01-26 2019-10-15 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP2010517298A (ja) * 2007-01-26 2010-05-20 クリスタル・イズ，インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
JP2008205221A (ja) * 2007-02-20 2008-09-04 Furukawa Electric Co Ltd:The 半導体素子
US8633514B2 (en) 2009-08-28 2014-01-21 Sumitomo Electric Industries, Ltd. Group III nitride semiconductor wafer and group III nitride semiconductor device
US9580833B2 (en) 2010-06-30 2017-02-28 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US9028612B2 (en) 2010-06-30 2015-05-12 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
US10074784B2 (en) 2011-07-19 2018-09-11 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
JP2012041269A (ja) * 2011-11-15 2012-03-01 Sanyo Electric Co Ltd 半導体基板およびその製造方法
JP2012064977A (ja) * 2011-12-15 2012-03-29 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体積層ウェハ及びｉｉｉ族窒化物半導体デバイス
US9299880B2 (en) 2013-03-15 2016-03-29 Crystal Is, Inc. Pseudomorphic electronic and optoelectronic devices having planar contacts
US10636663B2 (en) 2017-03-29 2020-04-28 Toyoda Gosei Co., Ltd. Method of manufacturing semiconductor device including implanting impurities into an implanted region of a semiconductor layer and annealing the implanted region
JP2020530939A (ja) * 2017-07-20 2020-10-29 スウェガン、アクチボラグＳｗｅｇａｎ Ａｂ 高電子移動度トランジスタのためのヘテロ構造及びその製造方法
JP7039684B2 (ja) 2017-07-20 2022-03-22 スウェガン、アクチボラグ 高電子移動度トランジスタのためのヘテロ構造及びその製造方法
US12002881B2 (en) 2017-07-20 2024-06-04 Swegan Ab Heterostructure for a high electron mobility transistor and a method of producing the same

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