JP2005164451A5 - - Google Patents

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Publication number
JP2005164451A5
JP2005164451A5 JP2003405332A JP2003405332A JP2005164451A5 JP 2005164451 A5 JP2005164451 A5 JP 2005164451A5 JP 2003405332 A JP2003405332 A JP 2003405332A JP 2003405332 A JP2003405332 A JP 2003405332A JP 2005164451 A5 JP2005164451 A5 JP 2005164451A5
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JP
Japan
Prior art keywords
sample
charge control
image
substrate
electrode
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JP2003405332A
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English (en)
Japanese (ja)
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JP4248382B2 (ja
JP2005164451A (ja
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Priority to JP2003405332A priority Critical patent/JP4248382B2/ja
Priority claimed from JP2003405332A external-priority patent/JP4248382B2/ja
Priority to US11/002,124 priority patent/US7019294B2/en
Publication of JP2005164451A publication Critical patent/JP2005164451A/ja
Priority to US11/375,070 priority patent/US7276693B2/en
Publication of JP2005164451A5 publication Critical patent/JP2005164451A5/ja
Application granted granted Critical
Publication of JP4248382B2 publication Critical patent/JP4248382B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003405332A 2003-12-04 2003-12-04 荷電粒子ビームによる検査方法および検査装置 Expired - Fee Related JP4248382B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003405332A JP4248382B2 (ja) 2003-12-04 2003-12-04 荷電粒子ビームによる検査方法および検査装置
US11/002,124 US7019294B2 (en) 2003-12-04 2004-12-03 Inspection method and apparatus using charged particle beam
US11/375,070 US7276693B2 (en) 2003-12-04 2006-03-15 Inspection method and apparatus using charged particle beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003405332A JP4248382B2 (ja) 2003-12-04 2003-12-04 荷電粒子ビームによる検査方法および検査装置

Publications (3)

Publication Number Publication Date
JP2005164451A JP2005164451A (ja) 2005-06-23
JP2005164451A5 true JP2005164451A5 (cg-RX-API-DMAC7.html) 2006-12-28
JP4248382B2 JP4248382B2 (ja) 2009-04-02

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JP2003405332A Expired - Fee Related JP4248382B2 (ja) 2003-12-04 2003-12-04 荷電粒子ビームによる検査方法および検査装置

Country Status (2)

Country Link
US (2) US7019294B2 (cg-RX-API-DMAC7.html)
JP (1) JP4248382B2 (cg-RX-API-DMAC7.html)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
JP4248382B2 (ja) * 2003-12-04 2009-04-02 株式会社日立ハイテクノロジーズ 荷電粒子ビームによる検査方法および検査装置
US7394070B2 (en) * 2004-12-27 2008-07-01 Hitachi High-Technologies Corporation Method and apparatus for inspecting patterns
JP2006196716A (ja) * 2005-01-14 2006-07-27 Matsushita Electric Ind Co Ltd 半導体製造装置および半導体装置の製造方法
JP4828162B2 (ja) 2005-05-31 2011-11-30 株式会社日立ハイテクノロジーズ 電子顕微鏡応用装置および試料検査方法
JP4790324B2 (ja) 2005-06-15 2011-10-12 株式会社日立ハイテクノロジーズ パターン欠陥検査方法および装置
JP2007087639A (ja) * 2005-09-20 2007-04-05 Ebara Corp 電子線装置及びパターン評価方法
JP5164317B2 (ja) * 2005-08-19 2013-03-21 株式会社日立ハイテクノロジーズ 電子線による検査・計測方法および検査・計測装置
US8890066B1 (en) * 2005-08-26 2014-11-18 Kla-Tencor Corporation Sharp scattering angle trap for electron beam apparatus
JP4906409B2 (ja) * 2006-06-22 2012-03-28 株式会社アドバンテスト 電子ビーム寸法測定装置及び電子ビーム寸法測定方法
JP4795883B2 (ja) * 2006-07-21 2011-10-19 株式会社日立ハイテクノロジーズ パターン検査・計測装置
US7488938B1 (en) * 2006-08-23 2009-02-10 Kla-Tencor Technologies Corporation Charge-control method and apparatus for electron beam imaging
JP4994749B2 (ja) * 2006-09-05 2012-08-08 株式会社アドバンテスト 電子ビーム寸法測定装置及び電子ビーム寸法測定方法
JP5054960B2 (ja) * 2006-10-13 2012-10-24 株式会社日立ハイテクノロジーズ 電子線を用いた試料の観察方法
JP5117080B2 (ja) * 2007-03-07 2013-01-09 株式会社日立ハイテクノロジーズ 試料観察条件設定方法及び装置、並びに試料観察方法及び装置
JP5156276B2 (ja) * 2007-06-20 2013-03-06 株式会社荏原製作所 試料表面上の異物除去方法及びこれに用いる荷電粒子線装置
TWI435361B (zh) 2007-04-16 2014-04-21 Ebara Corp 電子射線裝置及使用該電子射線裝置之試料觀察方法
JP5055015B2 (ja) * 2007-05-09 2012-10-24 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US20080296496A1 (en) * 2007-05-30 2008-12-04 Hermes Microvision, Inc. (Taiwan) Method and apparatus of wafer surface potential regulation
JP5110977B2 (ja) * 2007-06-22 2012-12-26 株式会社日立ハイテクノロジーズ 欠陥観察装置及びその方法
JP2009170150A (ja) * 2008-01-11 2009-07-30 Hitachi High-Technologies Corp 検査計測装置および検査計測方法
JP2009295816A (ja) * 2008-06-05 2009-12-17 Toshiba Corp ウェーハ露光方法およびｅｕｖ露光装置
JP5492405B2 (ja) * 2008-12-02 2014-05-14 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP5352262B2 (ja) * 2009-02-06 2013-11-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置
FR2942070B1 (fr) * 2009-02-11 2011-03-11 Commissariat Energie Atomique Procede de correction d'astigmatisme en imagerie par spectromicroscopie a emission d'electrons
DE102009037688B4 (de) * 2009-08-17 2011-06-16 Siemens Aktiengesellschaft Vorrichtung und Verfahren zur Steuerung eines Elektronenstrahls für die Erzeugung von Röntgenstrahlung sowie Röntgenröhre
US8294125B2 (en) * 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
US9679741B2 (en) 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US10102619B1 (en) 2011-03-28 2018-10-16 Hermes Microvision, Inc. Inspection method and system
US10924668B2 (en) * 2011-09-19 2021-02-16 Epilog Imaging Systems Method and apparatus for obtaining enhanced resolution images
JP5914020B2 (ja) * 2012-02-09 2016-05-11 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6198045B2 (ja) * 2012-08-31 2017-09-20 パナソニックＩｐマネジメント株式会社 液晶表示装置
US9423359B2 (en) * 2013-06-26 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer charging electromagnetic inspection tool and method of using
US9165742B1 (en) 2014-10-10 2015-10-20 Kla-Tencor Corporation Inspection site preparation
US20170067735A1 (en) * 2015-09-09 2017-03-09 Vishal Khosla Apparatus for In-Line Test and Surface Analysis on a Mechanical Property Tester
US10810240B2 (en) * 2015-11-06 2020-10-20 RedShred LLC Automatically assessing structured data for decision making
US10024776B2 (en) * 2016-07-20 2018-07-17 Rtec-Instruments, Inc. Apparatus for in-line testing and surface analysis on a mechanical property tester
JP6782795B2 (ja) * 2017-01-17 2020-11-11 株式会社日立ハイテク 走査電子顕微鏡および走査電子顕微鏡による試料観察方法
JP6778624B2 (ja) * 2017-01-31 2020-11-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理システムおよび基板処理方法
US11239043B2 (en) * 2020-05-19 2022-02-01 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
US11183361B1 (en) * 2020-05-19 2021-11-23 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting and/or imaging a sample
US12437962B2 (en) * 2020-09-30 2025-10-07 Hitachi High-Tech Corporation Charged particle beam apparatus
WO2022128846A1 (en) * 2020-12-16 2022-06-23 Asml Netherlands B.V. Thermal-aided inspection by advanced charge controller module in a charged particle system
KR20230068893A (ko) * 2021-11-11 2023-05-18 삼성전자주식회사 주사 전자 현미경(Scannig Electron Microscope, 이하 SEM), SEM을 동작시키는 방법 및 이를 이용한 반도체 소자를 제조하는 방법
JPWO2024029060A1 (cg-RX-API-DMAC7.html) * 2022-08-05 2024-02-08
JPWO2024127586A1 (cg-RX-API-DMAC7.html) * 2022-12-15 2024-06-20
KR20250150034A (ko) * 2023-06-27 2025-10-17 주식회사 히타치하이테크 하전 입자선 장치
TWI864844B (zh) * 2023-06-27 2024-12-01 由田新技股份有限公司 印刷電路板檢測系統及其方法
CN119890192B (zh) * 2025-03-28 2025-06-03 麦峤里(上海)半导体科技有限责任公司 一种在晶圆表面形成均匀的电荷密度的系统

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06338280A (ja) 1993-05-27 1994-12-06 Nikon Corp 環境制御型の走査型電子顕微鏡
US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
JP3994691B2 (ja) * 2001-07-04 2007-10-24 株式会社日立製作所 荷電粒子線装置および自動非点収差調整方法
US6300629B1 (en) * 1998-09-30 2001-10-09 Applied Materials, Inc. Defect review SEM with automatically switchable detector
US6344750B1 (en) 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
DE69901787T2 (de) * 1999-03-31 2002-11-21 Advantest Corp., Tokio/Tokyo Verfahren und Vorrichtung zur Abbildung eines Oberflächenpotentials
TWI297167B (en) * 2000-06-27 2008-05-21 Ebara Corp Inspection apparatus and inspection method
EP2587515A1 (en) * 2000-06-27 2013-05-01 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US7109483B2 (en) * 2000-11-17 2006-09-19 Ebara Corporation Method for inspecting substrate, substrate inspecting system and electron beam apparatus
JP2002270655A (ja) 2001-03-13 2002-09-20 Hitachi Ltd 半導体装置の製造方法
JP2002313273A (ja) * 2001-04-17 2002-10-25 Hitachi Ltd 電子顕微鏡装置
JP3955450B2 (ja) * 2001-09-27 2007-08-08 株式会社ルネサステクノロジ 試料検査方法
JP2003151483A (ja) * 2001-11-19 2003-05-23 Hitachi Ltd 荷電粒子線を用いた回路パターン用基板検査装置および基板検査方法
US6825475B2 (en) * 2002-09-19 2004-11-30 Applied Materials Israel, Ltd. Deflection method and system for use in a charged particle beam column
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
JP4248382B2 (ja) * 2003-12-04 2009-04-02 株式会社日立ハイテクノロジーズ 荷電粒子ビームによる検査方法および検査装置
JP4158199B2 (ja) * 2004-01-30 2008-10-01 株式会社島津製作所 Ｔｆｔアレイ検査装置
JP4528014B2 (ja) * 2004-04-05 2010-08-18 株式会社日立ハイテクノロジーズ 試料検査方法
US7067807B2 (en) * 2004-09-08 2006-06-27 Applied Materials, Israel, Ltd. Charged particle beam column and method of its operation
US7394070B2 (en) * 2004-12-27 2008-07-01 Hitachi High-Technologies Corporation Method and apparatus for inspecting patterns
JP4828162B2 (ja) * 2005-05-31 2011-11-30 株式会社日立ハイテクノロジーズ 電子顕微鏡応用装置および試料検査方法
JP5164317B2 (ja) * 2005-08-19 2013-03-21 株式会社日立ハイテクノロジーズ 電子線による検査・計測方法および検査・計測装置

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