JP2005136386A5 - - Google Patents
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- Publication number
- JP2005136386A5 JP2005136386A5 JP2004271321A JP2004271321A JP2005136386A5 JP 2005136386 A5 JP2005136386 A5 JP 2005136386A5 JP 2004271321 A JP2004271321 A JP 2004271321A JP 2004271321 A JP2004271321 A JP 2004271321A JP 2005136386 A5 JP2005136386 A5 JP 2005136386A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide layer
- layer
- group
- silicon carbide
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 103
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 94
- 239000007789 gas Substances 0.000 claims description 93
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 74
- 229910021478 group 5 element Inorganic materials 0.000 claims description 71
- 239000012535 impurity Substances 0.000 claims description 56
- 238000009792 diffusion process Methods 0.000 claims description 42
- 239000012298 atmosphere Substances 0.000 claims description 41
- 229910052757 nitrogen Inorganic materials 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 33
- 238000000137 annealing Methods 0.000 claims description 23
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000002484 cyclic voltammetry Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- -1 NO gas Chemical compound 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004271321A JP2005136386A (ja) | 2003-10-09 | 2004-09-17 | 炭化珪素−酸化物積層体，その製造方法及び半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003350244 | 2003-10-09 | ||
| JP2004271321A JP2005136386A (ja) | 2003-10-09 | 2004-09-17 | 炭化珪素−酸化物積層体，その製造方法及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005136386A JP2005136386A (ja) | 2005-05-26 |
| JP2005136386A5 true JP2005136386A5 (enrdf_load_stackoverflow) | 2005-12-15 |
Family
ID=34656036
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004271321A Withdrawn JP2005136386A (ja) | 2003-10-09 | 2004-09-17 | 炭化珪素−酸化物積層体，その製造方法及び半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005136386A (enrdf_load_stackoverflow) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100221917A1 (en) * | 2006-01-30 | 2010-09-02 | Sumitomo Electric Industries, Ltd. | Method of manufacturing silicon carbide semiconductor device |
| JP5298691B2 (ja) * | 2008-07-31 | 2013-09-25 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
| US8188538B2 (en) | 2008-12-25 | 2012-05-29 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| JP2014225692A (ja) * | 2008-12-25 | 2014-12-04 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2010103820A1 (ja) | 2009-03-11 | 2010-09-16 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
| WO2011027540A1 (ja) * | 2009-09-02 | 2011-03-10 | パナソニック株式会社 | 半導体素子およびその製造方法 |
| US8421151B2 (en) | 2009-10-22 | 2013-04-16 | Panasonic Corporation | Semiconductor device and process for production thereof |
| WO2011074237A1 (ja) * | 2009-12-16 | 2011-06-23 | 国立大学法人奈良先端科学技術大学院大学 | ＳｉＣ半導体素子およびその作製方法 |
| EP2528098B1 (en) * | 2010-01-19 | 2019-01-02 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing same |
| CA2740244A1 (en) | 2010-01-27 | 2011-07-27 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing thereof |
| JP5668576B2 (ja) * | 2011-04-01 | 2015-02-12 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP5687220B2 (ja) * | 2012-01-20 | 2015-03-18 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6141130B2 (ja) * | 2013-07-16 | 2017-06-07 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6305294B2 (ja) * | 2014-09-19 | 2018-04-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP6301795B2 (ja) * | 2014-09-19 | 2018-03-28 | 株式会社東芝 | 半導体装置 |
| JP6526549B2 (ja) * | 2015-03-24 | 2019-06-05 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
| JP6692306B2 (ja) * | 2017-02-09 | 2020-05-13 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
| CN111681943A (zh) * | 2020-04-27 | 2020-09-18 | 全球能源互联网研究院有限公司 | 一种碳化硅表面的处理方法 |
| KR102758455B1 (ko) * | 2023-01-19 | 2025-01-22 | (주)이큐테크플러스 | 고온 산화 공정 시 계면의 결함 증가를 최소화 하는 박막의 생성 방법 |
-
2004
- 2004-09-17 JP JP2004271321A patent/JP2005136386A/ja not_active Withdrawn
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