JP2005136383A - 有機半導体素子、その製造方法および有機半導体装置 - Google Patents

有機半導体素子、その製造方法および有機半導体装置 Download PDF

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Publication number
JP2005136383A
JP2005136383A JP2004264499A JP2004264499A JP2005136383A JP 2005136383 A JP2005136383 A JP 2005136383A JP 2004264499 A JP2004264499 A JP 2004264499A JP 2004264499 A JP2004264499 A JP 2004264499A JP 2005136383 A JP2005136383 A JP 2005136383A
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JP
Japan
Prior art keywords
organic semiconductor
polymer layer
semiconductor element
insulating film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004264499A
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English (en)
Japanese (ja)
Other versions
JP2005136383A5 (enExample
Inventor
Takayuki Doi
孝之 土井
Akira Unno
章 海野
Naotake Sato
尚武 佐藤
Hajime Miyazaki
元 宮崎
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Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004264499A priority Critical patent/JP2005136383A/ja
Priority to US10/532,078 priority patent/US20050287697A1/en
Priority to PCT/JP2004/015295 priority patent/WO2005036652A1/en
Publication of JP2005136383A publication Critical patent/JP2005136383A/ja
Publication of JP2005136383A5 publication Critical patent/JP2005136383A5/ja
Priority to US12/003,401 priority patent/US7795612B2/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2004264499A 2003-10-09 2004-09-10 有機半導体素子、その製造方法および有機半導体装置 Pending JP2005136383A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004264499A JP2005136383A (ja) 2003-10-09 2004-09-10 有機半導体素子、その製造方法および有機半導体装置
US10/532,078 US20050287697A1 (en) 2003-10-09 2004-10-08 Organic semicounductor device, process for producing the same, and organic semiconductor apparatus
PCT/JP2004/015295 WO2005036652A1 (en) 2003-10-09 2004-10-08 Organic semiconductor device, process for producing the same, and organic semiconductor apparatus
US12/003,401 US7795612B2 (en) 2003-10-09 2007-12-26 Organic semiconductor device, process for producing the same, and organic semiconductor apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003351159 2003-10-09
JP2004264499A JP2005136383A (ja) 2003-10-09 2004-09-10 有機半導体素子、その製造方法および有機半導体装置

Publications (2)

Publication Number Publication Date
JP2005136383A true JP2005136383A (ja) 2005-05-26
JP2005136383A5 JP2005136383A5 (enExample) 2007-01-25

Family

ID=34436916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004264499A Pending JP2005136383A (ja) 2003-10-09 2004-09-10 有機半導体素子、その製造方法および有機半導体装置

Country Status (3)

Country Link
US (2) US20050287697A1 (enExample)
JP (1) JP2005136383A (enExample)
WO (1) WO2005036652A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244022A (ja) * 2007-03-26 2008-10-09 Kyushu Univ 有機半導体素子およびその製造方法
JP2009059751A (ja) * 2007-08-30 2009-03-19 Idemitsu Kosan Co Ltd 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JP2010525587A (ja) * 2007-04-25 2010-07-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子装置の製造方法
JP2015532768A (ja) * 2012-08-25 2015-11-12 ポリエラ コーポレイションＰｏｌｙｅｒａ Ｃｏｒｐｏｒａｔｉｏｎ 改善された性能を有する発光トランジスタ

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4612786B2 (ja) * 2003-03-03 2011-01-12 キヤノン株式会社 有機電界効果型トランジスタの製造方法
EP1609196B1 (en) * 2003-04-01 2010-12-22 Canon Kabushiki Kaisha Organic semiconductor device
KR101086159B1 (ko) * 2005-01-07 2011-11-25 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터
ITMI20051901A1 (it) * 2005-10-10 2007-04-11 St Microelectronics Srl Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore
KR101186725B1 (ko) * 2006-02-21 2012-09-28 삼성전자주식회사 불소계 고분자 박막을 포함하는 유기 박막 트랜지스터 및 이의 제조방법
US20070262297A1 (en) * 2006-05-10 2007-11-15 Salvatore Leonardi Organic thin-film transistor device and corresponding manufacturing method
JP2009539241A (ja) * 2006-05-29 2009-11-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ センシング用の有機電界効果トランジスタ
CN100505365C (zh) * 2006-10-13 2009-06-24 中国科学院化学研究所 一种实现低电压操作有机场效应晶体管的方法
US8148543B2 (en) * 2006-10-16 2012-04-03 Canon Kabushiki Kaisha Organic semiconductor material and organic thin-film transistor
KR100829385B1 (ko) * 2006-11-27 2008-05-13 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조 방법
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US20120119179A1 (en) * 2010-11-05 2012-05-17 Kabushiki Kaisha Toshiba Memory device and method for manufacturing the same
GB201810710D0 (en) * 2018-06-29 2018-08-15 Smartkem Ltd Sputter Protective Layer For Organic Electronic Devices
US20220352379A1 (en) * 2021-04-29 2022-11-03 Taiwan Semiconductor Manufacturing Company Limited Ferroelectric memory devices having improved ferroelectric properties and methods of making the same

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3531913A1 (de) * 1985-09-07 1987-03-19 Roehm Gmbh Haertbare giessharze
JP2813428B2 (ja) 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
CA2055752A1 (en) 1990-12-03 1992-06-04 Peter Anton August Klusener Catalyst compositions
JP3352118B2 (ja) * 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
JPH08254702A (ja) * 1995-03-15 1996-10-01 Hoechst Ind Kk 液晶表示素子
US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
CA2231625C (en) * 1997-03-17 2002-04-02 Canon Kabushiki Kaisha Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate
CA2233096C (en) * 1997-03-26 2003-01-07 Canon Kabushiki Kaisha Substrate and production method thereof
US6143628A (en) * 1997-03-27 2000-11-07 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
US6407367B1 (en) * 1997-12-26 2002-06-18 Canon Kabushiki Kaisha Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article
US6413874B1 (en) * 1997-12-26 2002-07-02 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
US6171982B1 (en) * 1997-12-26 2001-01-09 Canon Kabushiki Kaisha Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
KR100376658B1 (ko) * 1998-09-04 2003-03-19 캐논 가부시끼가이샤 반도체기판 및 그 형성방법
TW465101B (en) * 1998-09-04 2001-11-21 Canon Kk Semiconductor substrate and method for producing the same
EP0996145A3 (en) * 1998-09-04 2000-11-08 Canon Kabushiki Kaisha Process for producing semiconductor substrate
KR100559103B1 (ko) * 1998-11-30 2006-03-15 스미또모 가가꾸 가부시끼가이샤 메틸 메타크릴레이트계 수지 조성물
JP3817993B2 (ja) 1998-11-30 2006-09-06 住友化学株式会社 メタクリル酸メチル系樹脂組成物
US6375738B1 (en) * 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
JP5167569B2 (ja) * 1999-06-21 2013-03-21 ケンブリッジ・エンタープライズ・リミテッド トランジスタの製造方法
US6720572B1 (en) * 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
JP2001094107A (ja) 1999-09-20 2001-04-06 Hitachi Ltd 有機半導体装置及び液晶表示装置
JP2002359247A (ja) * 2000-07-10 2002-12-13 Canon Inc 半導体部材、半導体装置およびそれらの製造方法
US6783588B2 (en) * 2000-12-15 2004-08-31 Canon Kabushiki Kaisha BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator
JP2002305293A (ja) * 2001-04-06 2002-10-18 Canon Inc 半導体部材の製造方法及び半導体装置の製造方法
US6433359B1 (en) * 2001-09-06 2002-08-13 3M Innovative Properties Company Surface modifying layers for organic thin film transistors
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
EP2204861A1 (en) * 2001-12-19 2010-07-07 Merck Patent GmbH Organic field effect transistor with an organic dielectric
JP4136482B2 (ja) * 2002-06-20 2008-08-20 キヤノン株式会社 有機半導体素子、その製造方法および有機半導体装置
JP2004055654A (ja) * 2002-07-17 2004-02-19 Pioneer Electronic Corp 有機半導体素子
EP1383179A2 (en) * 2002-07-17 2004-01-21 Pioneer Corporation Organic semiconductor device
JP2004165427A (ja) * 2002-11-13 2004-06-10 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子
US7285440B2 (en) * 2002-11-25 2007-10-23 International Business Machines Corporation Organic underlayers that improve the performance of organic semiconductors
JP4612786B2 (ja) * 2003-03-03 2011-01-12 キヤノン株式会社 有機電界効果型トランジスタの製造方法
US7199061B2 (en) * 2003-04-21 2007-04-03 Applied Materials, Inc. Pecvd silicon oxide thin film deposition
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
TWI242232B (en) * 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244022A (ja) * 2007-03-26 2008-10-09 Kyushu Univ 有機半導体素子およびその製造方法
JP2010525587A (ja) * 2007-04-25 2010-07-22 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 電子装置の製造方法
JP2009059751A (ja) * 2007-08-30 2009-03-19 Idemitsu Kosan Co Ltd 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JP2015532768A (ja) * 2012-08-25 2015-11-12 ポリエラ コーポレイションＰｏｌｙｅｒａ Ｃｏｒｐｏｒａｔｉｏｎ 改善された性能を有する発光トランジスタ

Also Published As

Publication number Publication date
WO2005036652A1 (en) 2005-04-21
US20050287697A1 (en) 2005-12-29
US7795612B2 (en) 2010-09-14
US20080105868A1 (en) 2008-05-08

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