JP2005120429A - スパッタリングターゲット材 - Google Patents
スパッタリングターゲット材 Download PDFInfo
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- JP2005120429A JP2005120429A JP2003356769A JP2003356769A JP2005120429A JP 2005120429 A JP2005120429 A JP 2005120429A JP 2003356769 A JP2003356769 A JP 2003356769A JP 2003356769 A JP2003356769 A JP 2003356769A JP 2005120429 A JP2005120429 A JP 2005120429A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2595—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on gold
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
【解決手段】 Agに特定少量のPを添加して合金化してなるAg基合金から構成されたスパッタリングターゲット材。
【選択図】 なし
Description
パッタリングターゲット材を用いて形成された薄膜に関する。
さらにCu、Ni、Fe、Biのような金属元素を少量添加して合金化すると、Ag基合金の耐熱性がさらに一層向上すること、等を見出し、本発明を完成するに至った。
本発明は、また、0.005〜1.0mass%のPと、Cu、Ni、Fe及びBiから選ばれる少なくとも1種の金属元素0.01〜5.0mass%とを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材を提供するものである。
AgおよびP、場合によりIn、Sn、Zn、Au、Pd、Pt、Cu、Ni、Fe及びBiのうち内の少なくとも1種を加え、ガス炉内で約1200℃の温度に加熱して溶融した後、鋳造加工し、表1に示す組成のスパッタリングターゲット材を作製した。また、表1に示す組成の比較例についても同様にしてスパッタリングターゲット材を作製した。
その結果を表2に示す。
実際の使用環境下においては、耐食性、特に耐硫化性の向上が求められることがある。そこで、上記実施例におけると同様にして下記表4に示す組成のスパッタリングターゲット材を作製し、その耐硫化性を調査した。
その調査方法としては、上記のスパッタリングターゲット材を用い、ガラス基板上に膜厚150nmとなるように高周波(RF)スパッタリング法により成膜し、薄膜の反射率を測定した後、その薄膜を0.01%硫化ナトリウム(Na2S)水溶液中に1時間浸漬し、再度反射率を測定し、浸漬前後の薄膜の反射率の変化率を下記計算式により算出した。
その結果を表5に示す。
また、実際の使用環境下においては、耐塩素性の向上が求められることもあるので、耐塩素性についての調査も行った。
調査方法としては、表6に示す組成のスパッタリングターゲット材を作製し、そのスパッタリングターゲット材を用い、ガラス基板上に膜厚150nmとなるように高周波(RF)スパッタリング法により成膜し、その薄膜の反射率を測定した後、3%塩化ナトリウム(NaCl)水溶液中に10分浸漬し、再度反射率を測定し、浸漬前後の薄膜の反射率の変化率を下記計算式により算出した。
その結果を表7に示す。
Claims (9)
- 0.005〜1.0mass%のPを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 0.005〜1.0mass%のPと、In、Sn及びZnから選ばれる少なくとも1種の金属元素0.01〜2.0mass%とを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 0.005〜1.0mass%のPと、0.01〜0.9mass%のAu及び/又は0.01〜5.0mass%のPd及び/又は0.01〜0.9mass%のPtとを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 0.005〜1.0mass%のPと、Cu、Ni、Fe及びBiから選ばれる少なくとも1種の金属元素0.01〜5.0mass%とを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 0.005〜1.0mass%のPと、In、Sn及びZnから選ばれる少なくとも1種の金属元素0.01〜2.0mass%と、0.01〜0.9mass%のAu及び/又は0.01〜5.0mass%のPd及び/又は0.01〜0.9mass%のPtとを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 0.005〜1.0mass%のPと、In、Sn及びZnから選ばれる少なくとも1種の金属元素0.01〜2.0mass%と、Cu、Ni、Fe及びBiから選ばれる少なくとも1種の金属元素0.01〜5.0mass%とを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 0.005〜1.0mass%のPと、0.01〜0.9mass%のAu及び/又は0.01〜5.0mass%のPdおよび/又は0.01〜0.9mass%のPtと、Cu、Ni、Fe及びBiから選ばれる少なくとも1種の金属元素0.01〜5.0mass%とを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 0.005〜1.0mass%のPと、In、Sn及びZnから選ばれる少なくとも1種の金属元素0.01〜2.0mass%と、0.01〜0.9mass%のAu及び/又は0.01〜5.0mass%のPd及び/又は0.01〜0.9mass%のPtと、Cu、Ni、Fe及びBiから選ばれる少なくとも1種の金属元素0.01〜5.0mass%とを含有するAg基合金より構成されていることを特徴とする高反射率を有する薄膜形成用スパッタリングターゲット材。
- 請求項1〜8のいずれかに記載のAg基合金からなる薄膜。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003356769A JP4309227B2 (ja) | 2003-10-16 | 2003-10-16 | スパッタリングターゲット材 |
US10/575,725 US7959746B2 (en) | 2003-10-16 | 2004-10-08 | Sputtering target material |
KR1020067007014A KR101196277B1 (ko) | 2003-10-16 | 2004-10-08 | 스퍼터링 타겟재 |
PCT/JP2004/015294 WO2005038078A1 (ja) | 2003-10-16 | 2004-10-08 | スパッタリングターゲット材 |
CN2004800298903A CN1867693B (zh) | 2003-10-16 | 2004-10-08 | 溅射靶材 |
EP20040792511 EP1690958A4 (en) | 2003-10-16 | 2004-10-08 | MATERIAL FOR SPRAY TARGET |
TW93131137A TWI281508B (en) | 2003-10-16 | 2004-10-14 | Sputtering-target materials |
US13/102,209 US8252127B2 (en) | 2003-10-16 | 2011-05-06 | Sputtering target material |
US13/305,963 US9127346B2 (en) | 2003-10-16 | 2011-11-29 | Sputtering target material |
US13/692,256 US8858877B2 (en) | 2003-10-16 | 2012-12-03 | Sputtering target material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003356769A JP4309227B2 (ja) | 2003-10-16 | 2003-10-16 | スパッタリングターゲット材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005120429A true JP2005120429A (ja) | 2005-05-12 |
JP4309227B2 JP4309227B2 (ja) | 2009-08-05 |
Family
ID=34463223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003356769A Expired - Fee Related JP4309227B2 (ja) | 2003-10-16 | 2003-10-16 | スパッタリングターゲット材 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7959746B2 (ja) |
EP (1) | EP1690958A4 (ja) |
JP (1) | JP4309227B2 (ja) |
KR (1) | KR101196277B1 (ja) |
CN (1) | CN1867693B (ja) |
TW (1) | TWI281508B (ja) |
WO (1) | WO2005038078A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006099890A (ja) * | 2004-09-30 | 2006-04-13 | Taiyo Yuden Co Ltd | 光情報記録媒体 |
JP2007003624A (ja) * | 2005-06-21 | 2007-01-11 | Ishifuku Metal Ind Co Ltd | 半反射型半透過膜 |
JP2007113102A (ja) * | 2005-10-24 | 2007-05-10 | Ishifuku Metal Ind Co Ltd | Ag基合金からなるスパッタリングターゲット材または蒸着材料および薄膜 |
JP2012027226A (ja) * | 2010-07-23 | 2012-02-09 | Seiko Epson Corp | 干渉フィルター、光モジュール、及び分析装置 |
JP2012140682A (ja) * | 2010-12-29 | 2012-07-26 | Ishifuku Metal Ind Co Ltd | Ag基合金からなる反射膜 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1814137A3 (en) * | 2006-01-27 | 2008-04-23 | Sony DADC Austria AG | Mass spectrometry target assembly |
JP2011032507A (ja) * | 2009-07-30 | 2011-02-17 | Sanyo Electric Co Ltd | 電解用電極材料、電解用電極及びその製造方法 |
JP5159963B1 (ja) * | 2012-01-13 | 2013-03-13 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
US8783544B2 (en) * | 2012-03-20 | 2014-07-22 | Joseph W. Harris | Brazing alloys and methods of brazing |
CN104419844A (zh) * | 2013-08-23 | 2015-03-18 | 光洋应用材料科技股份有限公司 | 银合金材料 |
DE102014214683A1 (de) * | 2014-07-25 | 2016-01-28 | Heraeus Deutschland GmbH & Co. KG | Sputtertarget auf der Basis einer Silberlegierung |
KR20160049255A (ko) * | 2014-10-27 | 2016-05-09 | 한국생산기술연구원 | 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟 |
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GB1546376A (en) * | 1976-03-26 | 1979-05-23 | Johnson Matthey Co Ltd | Silver base alloys |
JPS5986218A (ja) * | 1982-11-09 | 1984-05-18 | Nec Corp | 半導体装置の製造方法 |
JPS61133350A (ja) * | 1984-12-03 | 1986-06-20 | Hitachi Ltd | 分光反射率可変合金及び記録材料 |
JPS62112742A (ja) * | 1985-11-11 | 1987-05-23 | Hitachi Ltd | 分光反射率可変合金 |
JPS6313690A (ja) * | 1986-07-03 | 1988-01-20 | Ishifuku Kinzoku Kogyo Kk | 銀ろう材 |
JP2768981B2 (ja) * | 1989-06-22 | 1998-06-25 | シャープ株式会社 | 光メモリ素子 |
JP3104299B2 (ja) * | 1991-06-03 | 2000-10-30 | 三菱伸銅株式会社 | 電縫溶接管製造用Ag合金 |
JPH09324264A (ja) * | 1996-06-03 | 1997-12-16 | Toppan Printing Co Ltd | スパッタリングターゲット |
DE69735460T2 (de) * | 1996-12-18 | 2006-11-16 | Mitsubishi Kagaku Media Co. Ltd. | Optische Aufzeichnungsplatte |
US6544616B2 (en) * | 2000-07-21 | 2003-04-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
JP3855958B2 (ja) * | 2001-03-16 | 2006-12-13 | 石福金属興業株式会社 | スパッタリングターゲット材 |
JP2002319185A (ja) * | 2001-04-23 | 2002-10-31 | Sumitomo Metal Mining Co Ltd | 光記録ディスク反射膜用銀合金 |
JP3997177B2 (ja) * | 2002-08-09 | 2007-10-24 | 株式会社神戸製鋼所 | 電磁波シールド用Ag合金膜、電磁波シールド用Ag合金膜形成体および電磁波シールド用Ag合金膜の形成用のAg合金スパッタリングターゲット |
JP2004192702A (ja) * | 2002-12-10 | 2004-07-08 | Tanaka Kikinzoku Kogyo Kk | 光記録媒体の反射膜用の銀合金 |
US6841012B2 (en) * | 2003-04-29 | 2005-01-11 | Steridyne Laboratories, Inc. | Anti-tarnish silver alloy |
-
2003
- 2003-10-16 JP JP2003356769A patent/JP4309227B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-08 WO PCT/JP2004/015294 patent/WO2005038078A1/ja active Application Filing
- 2004-10-08 EP EP20040792511 patent/EP1690958A4/en not_active Withdrawn
- 2004-10-08 US US10/575,725 patent/US7959746B2/en not_active Expired - Fee Related
- 2004-10-08 CN CN2004800298903A patent/CN1867693B/zh not_active Expired - Fee Related
- 2004-10-08 KR KR1020067007014A patent/KR101196277B1/ko not_active IP Right Cessation
- 2004-10-14 TW TW93131137A patent/TWI281508B/zh not_active IP Right Cessation
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2011
- 2011-05-06 US US13/102,209 patent/US8252127B2/en not_active Expired - Fee Related
- 2011-11-29 US US13/305,963 patent/US9127346B2/en not_active Expired - Fee Related
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2012
- 2012-12-03 US US13/692,256 patent/US8858877B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006099890A (ja) * | 2004-09-30 | 2006-04-13 | Taiyo Yuden Co Ltd | 光情報記録媒体 |
JP2007003624A (ja) * | 2005-06-21 | 2007-01-11 | Ishifuku Metal Ind Co Ltd | 半反射型半透過膜 |
JP2007113102A (ja) * | 2005-10-24 | 2007-05-10 | Ishifuku Metal Ind Co Ltd | Ag基合金からなるスパッタリングターゲット材または蒸着材料および薄膜 |
JP4585952B2 (ja) * | 2005-10-24 | 2010-11-24 | 石福金属興業株式会社 | Ag基合金からなる薄膜 |
JP2012027226A (ja) * | 2010-07-23 | 2012-02-09 | Seiko Epson Corp | 干渉フィルター、光モジュール、及び分析装置 |
JP2012140682A (ja) * | 2010-12-29 | 2012-07-26 | Ishifuku Metal Ind Co Ltd | Ag基合金からなる反射膜 |
Also Published As
Publication number | Publication date |
---|---|
JP4309227B2 (ja) | 2009-08-05 |
WO2005038078A1 (ja) | 2005-04-28 |
US8252127B2 (en) | 2012-08-28 |
EP1690958A4 (en) | 2008-09-10 |
US20130094990A1 (en) | 2013-04-18 |
US8858877B2 (en) | 2014-10-14 |
US20110211988A1 (en) | 2011-09-01 |
US9127346B2 (en) | 2015-09-08 |
US20120070332A1 (en) | 2012-03-22 |
KR20060128860A (ko) | 2006-12-14 |
TWI281508B (en) | 2007-05-21 |
CN1867693A (zh) | 2006-11-22 |
US7959746B2 (en) | 2011-06-14 |
KR101196277B1 (ko) | 2012-11-06 |
CN1867693B (zh) | 2011-04-06 |
US20070128456A1 (en) | 2007-06-07 |
TW200517510A (en) | 2005-06-01 |
EP1690958A1 (en) | 2006-08-16 |
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