JP2005117029A5 - - Google Patents
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- Publication number
- JP2005117029A5 JP2005117029A5 JP2004261447A JP2004261447A JP2005117029A5 JP 2005117029 A5 JP2005117029 A5 JP 2005117029A5 JP 2004261447 A JP2004261447 A JP 2004261447A JP 2004261447 A JP2004261447 A JP 2004261447A JP 2005117029 A5 JP2005117029 A5 JP 2005117029A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- region
- amorphous semiconductor
- crystal plane
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 52
- 239000010408 film Substances 0.000 claims 48
- 239000013078 crystal Substances 0.000 claims 30
- 239000010409 thin film Substances 0.000 claims 10
- 238000002425 crystallisation Methods 0.000 claims 8
- 230000008025 crystallization Effects 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 7
- 239000012535 impurity Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 238000002524 electron diffraction data Methods 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004261447A JP4593212B2 (ja) | 2003-09-19 | 2004-09-08 | 薄膜トランジスタの作製方法、及び半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003328786 | 2003-09-19 | ||
| JP2004261447A JP4593212B2 (ja) | 2003-09-19 | 2004-09-08 | 薄膜トランジスタの作製方法、及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005117029A JP2005117029A (ja) | 2005-04-28 |
| JP2005117029A5 true JP2005117029A5 (enExample) | 2007-07-26 |
| JP4593212B2 JP4593212B2 (ja) | 2010-12-08 |
Family
ID=34554662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004261447A Expired - Fee Related JP4593212B2 (ja) | 2003-09-19 | 2004-09-08 | 薄膜トランジスタの作製方法、及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4593212B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007081066A (ja) * | 2005-09-13 | 2007-03-29 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、電気光学装置及び電子機器 |
| US8278739B2 (en) | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
| JP5311754B2 (ja) * | 2006-03-20 | 2013-10-09 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜、半導体装置及びそれらの作製方法 |
| US9177811B2 (en) | 2007-03-23 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8634228B2 (en) * | 2010-09-02 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4566294B2 (ja) * | 1997-06-06 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 連続粒界結晶シリコン膜、半導体装置 |
| JP4646460B2 (ja) * | 2000-08-02 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4316149B2 (ja) * | 2001-02-20 | 2009-08-19 | シャープ株式会社 | 薄膜トランジスタ製造方法 |
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2004
- 2004-09-08 JP JP2004261447A patent/JP4593212B2/ja not_active Expired - Fee Related