JP4593212B2 - 薄膜トランジスタの作製方法、及び半導体装置の作製方法 - Google Patents

薄膜トランジスタの作製方法、及び半導体装置の作製方法 Download PDF

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JP4593212B2
JP4593212B2 JP2004261447A JP2004261447A JP4593212B2 JP 4593212 B2 JP4593212 B2 JP 4593212B2 JP 2004261447 A JP2004261447 A JP 2004261447A JP 2004261447 A JP2004261447 A JP 2004261447A JP 4593212 B2 JP4593212 B2 JP 4593212B2
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film
silicon film
region
crystal
amorphous silicon
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JP2004261447A
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Japanese (ja)
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JP2005117029A (ja
JP2005117029A5 (enExample
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英人 大沼
剛司 野田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP2004261447A 2003-09-19 2004-09-08 薄膜トランジスタの作製方法、及び半導体装置の作製方法 Expired - Fee Related JP4593212B2 (ja)

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JP2004261447A JP4593212B2 (ja) 2003-09-19 2004-09-08 薄膜トランジスタの作製方法、及び半導体装置の作製方法

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JP2003328786 2003-09-19
JP2004261447A JP4593212B2 (ja) 2003-09-19 2004-09-08 薄膜トランジスタの作製方法、及び半導体装置の作製方法

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JP2005117029A JP2005117029A (ja) 2005-04-28
JP2005117029A5 JP2005117029A5 (enExample) 2007-07-26
JP4593212B2 true JP4593212B2 (ja) 2010-12-08

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JP2004261447A Expired - Fee Related JP4593212B2 (ja) 2003-09-19 2004-09-08 薄膜トランジスタの作製方法、及び半導体装置の作製方法

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007081066A (ja) * 2005-09-13 2007-03-29 Seiko Epson Corp 半導体装置の製造方法、半導体装置、電気光学装置及び電子機器
JP5311754B2 (ja) * 2006-03-20 2013-10-09 株式会社半導体エネルギー研究所 結晶性半導体膜、半導体装置及びそれらの作製方法
US8278739B2 (en) 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
US9177811B2 (en) 2007-03-23 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8634228B2 (en) * 2010-09-02 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4566294B2 (ja) * 1997-06-06 2010-10-20 株式会社半導体エネルギー研究所 連続粒界結晶シリコン膜、半導体装置
JP4646460B2 (ja) * 2000-08-02 2011-03-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4316149B2 (ja) * 2001-02-20 2009-08-19 シャープ株式会社 薄膜トランジスタ製造方法

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