JP2005101537A - 露光装置及びそれを用いたデバイスの製造方法 - Google Patents

露光装置及びそれを用いたデバイスの製造方法 Download PDF

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Publication number
JP2005101537A
JP2005101537A JP2004211693A JP2004211693A JP2005101537A JP 2005101537 A JP2005101537 A JP 2005101537A JP 2004211693 A JP2004211693 A JP 2004211693A JP 2004211693 A JP2004211693 A JP 2004211693A JP 2005101537 A JP2005101537 A JP 2005101537A
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JP
Japan
Prior art keywords
exposure apparatus
gas
wafer
reticle
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004211693A
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English (en)
Japanese (ja)
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JP2005101537A5 (enExample
Inventor
Takayasu Hasegawa
敬恭 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004211693A priority Critical patent/JP2005101537A/ja
Priority to US10/928,527 priority patent/US7330236B2/en
Publication of JP2005101537A publication Critical patent/JP2005101537A/ja
Publication of JP2005101537A5 publication Critical patent/JP2005101537A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004211693A 2003-08-29 2004-07-20 露光装置及びそれを用いたデバイスの製造方法 Withdrawn JP2005101537A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004211693A JP2005101537A (ja) 2003-08-29 2004-07-20 露光装置及びそれを用いたデバイスの製造方法
US10/928,527 US7330236B2 (en) 2003-08-29 2004-08-27 Exposure apparatus, and device manufacturing method using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003209519 2003-08-29
JP2004211693A JP2005101537A (ja) 2003-08-29 2004-07-20 露光装置及びそれを用いたデバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2005101537A true JP2005101537A (ja) 2005-04-14
JP2005101537A5 JP2005101537A5 (enExample) 2007-08-30

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Family Applications (1)

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JP2004211693A Withdrawn JP2005101537A (ja) 2003-08-29 2004-07-20 露光装置及びそれを用いたデバイスの製造方法

Country Status (2)

Country Link
US (1) US7330236B2 (enExample)
JP (1) JP2005101537A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
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JP2006287003A (ja) * 2005-04-01 2006-10-19 Tohoku Univ 露光装置
JP2006303270A (ja) * 2005-04-22 2006-11-02 Nikon Corp 露光装置
JP2007194590A (ja) * 2005-11-23 2007-08-02 Asml Netherlands Bv 放射システムおよびリソグラフィ装置
JP2007281142A (ja) * 2006-04-05 2007-10-25 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
EP2000854A2 (en) 2007-06-04 2008-12-10 Canon Kabushiki Kaisha Substrate processing apparatus and method of manufacturing device
JP2010503980A (ja) * 2006-09-19 2010-02-04 カール・ツァイス・エスエムティー・アーゲー 光学装置、特にｅｕｖリソグラフィ用投影露光装置並びに汚れの少ない反射光学素子
JP2010129687A (ja) * 2008-11-26 2010-06-10 Nikon Corp 真空装置、光源装置、露光装置及びデバイスの製造方法
US8259284B2 (en) 2008-08-27 2012-09-04 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
US8901524B2 (en) 2009-02-12 2014-12-02 Gigaphoton Inc. Extreme ultraviolet light source apparatus
US9291919B2 (en) 2010-11-22 2016-03-22 Renesas Electronics Corporation Light exposure method, and light exposure apparatus
JP2020516942A (ja) * 2017-04-11 2020-06-11 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および冷却方法

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US20060127293A1 (en) * 2004-10-12 2006-06-15 Infineon Technologies Richmond Lp System and method for processing semiconductor material using radiant energy source
US20070085984A1 (en) * 2005-10-18 2007-04-19 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
SG126120A1 (en) * 2005-03-29 2006-10-30 Asml Netherlands Bv Lithographic device, device manufacturing method and device manufactured thereby
US7502095B2 (en) * 2005-03-29 2009-03-10 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1981066B1 (en) * 2006-01-30 2014-01-22 Nikon Corporation Optical member holding apparatus and exposure apparatus
US20080073596A1 (en) * 2006-08-24 2008-03-27 Asml Netherlands B.V. Lithographic apparatus and method
JP2008263173A (ja) * 2007-03-16 2008-10-30 Canon Inc 露光装置
US8901521B2 (en) * 2007-08-23 2014-12-02 Asml Netherlands B.V. Module and method for producing extreme ultraviolet radiation
NL1036181A1 (nl) * 2007-11-30 2009-06-04 Asml Netherlands Bv A lithographic apparatus, a projection system and a device manufacturing method.
DE102008000957A1 (de) * 2008-04-03 2009-10-08 Carl Zeiss Smt Ag Schutzmodul sowie EUV-Lithographievorrichtung mit Schutzmodul
WO2010013671A1 (ja) * 2008-08-01 2010-02-04 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
DE102009029282A1 (de) 2009-09-08 2011-03-24 Carl Zeiss Smt Gmbh Optische Anordnung, insbesondere in einer Projektionsbelichtungsanlage für die EUV-Lithographie
DE102011080649A1 (de) * 2010-09-24 2012-03-29 Carl Zeiss Smt Gmbh Optische Anordnung in einer mikrolithographischen Projektionsbelichtungsanlage
WO2013156041A1 (en) * 2012-04-18 2013-10-24 Carl Zeiss Smt Gmbh A microlithographic apparatus and a method of changing an optical wavefront in an objective of such an apparatus
US9389180B2 (en) 2013-02-15 2016-07-12 Kla-Tencor Corporation Methods and apparatus for use with extreme ultraviolet light having contamination protection
CN103197508B (zh) * 2013-03-06 2014-11-12 华中科技大学 一种极紫外光照射下的光学表面污染与清洁模拟装置
US10714371B2 (en) * 2017-11-16 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for lithography in semiconductor fabrication
CN108398858B (zh) * 2018-03-20 2019-05-10 李笛 一种气体隔离装置及隔离方法
JP7667741B2 (ja) * 2019-04-01 2025-04-23 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置に関する方法
CN112485978A (zh) * 2020-12-24 2021-03-12 清华大学 用于光刻设备的真空释气装置
US12265336B2 (en) * 2021-04-30 2025-04-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
DE102023207013A1 (de) * 2023-07-24 2025-01-30 Carl Zeiss Smt Gmbh Optische Anordnung für eine EUV-Projektionsbelichtungsanlage, EUV-Projektionsbelichtungsanlage

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006287003A (ja) * 2005-04-01 2006-10-19 Tohoku Univ 露光装置
JP2006303270A (ja) * 2005-04-22 2006-11-02 Nikon Corp 露光装置
JP2007194590A (ja) * 2005-11-23 2007-08-02 Asml Netherlands Bv 放射システムおよびリソグラフィ装置
US7633597B2 (en) 2006-04-05 2009-12-15 Canon Kabushiki Kaisha Exposure method and apparatus, and device manufacturing method
JP2007281142A (ja) * 2006-04-05 2007-10-25 Canon Inc 露光装置及び方法、並びに、デバイス製造方法
KR100917968B1 (ko) * 2006-04-05 2009-09-17 캐논 가부시끼가이샤 노광방법 및 장치 및 디바이스의 제조방법
JP2010503980A (ja) * 2006-09-19 2010-02-04 カール・ツァイス・エスエムティー・アーゲー 光学装置、特にｅｕｖリソグラフィ用投影露光装置並びに汚れの少ない反射光学素子
EP2000854A2 (en) 2007-06-04 2008-12-10 Canon Kabushiki Kaisha Substrate processing apparatus and method of manufacturing device
JP2008300806A (ja) * 2007-06-04 2008-12-11 Canon Inc 基板処理装置、露光装置及びデバイス製造方法
EP2161351A1 (en) 2007-06-04 2010-03-10 Canon Kabushiki Kaisha Substrate processing apparatus and method of manufacturing a device
US8259284B2 (en) 2008-08-27 2012-09-04 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
JP2010129687A (ja) * 2008-11-26 2010-06-10 Nikon Corp 真空装置、光源装置、露光装置及びデバイスの製造方法
US8901524B2 (en) 2009-02-12 2014-12-02 Gigaphoton Inc. Extreme ultraviolet light source apparatus
US9291919B2 (en) 2010-11-22 2016-03-22 Renesas Electronics Corporation Light exposure method, and light exposure apparatus
JP2020516942A (ja) * 2017-04-11 2020-06-11 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および冷却方法
JP7155148B2 (ja) 2017-04-11 2022-10-18 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および冷却方法

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US7330236B2 (en) 2008-02-12
US20050110966A1 (en) 2005-05-26

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