JP2005101268A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005101268A JP2005101268A JP2003333070A JP2003333070A JP2005101268A JP 2005101268 A JP2005101268 A JP 2005101268A JP 2003333070 A JP2003333070 A JP 2003333070A JP 2003333070 A JP2003333070 A JP 2003333070A JP 2005101268 A JP2005101268 A JP 2005101268A
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- semiconductor substrate
- pad electrode
- via hole
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000011521 glass Substances 0.000 claims abstract description 17
- 229910000679 solder Inorganic materials 0.000 claims abstract description 12
- 230000000149 penetrating effect Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 9
- 238000007772 electroless plating Methods 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000009499 grossing Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 41
- 229910052710 silicon Inorganic materials 0.000 abstract description 39
- 239000010703 silicon Substances 0.000 abstract description 39
- 239000010410 layer Substances 0.000 description 55
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003333070A JP2005101268A (ja) | 2003-09-25 | 2003-09-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003333070A JP2005101268A (ja) | 2003-09-25 | 2003-09-25 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005101268A true JP2005101268A (ja) | 2005-04-14 |
| JP2005101268A5 JP2005101268A5 (OSRAM) | 2006-11-02 |
Family
ID=34461188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003333070A Pending JP2005101268A (ja) | 2003-09-25 | 2003-09-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005101268A (OSRAM) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053149A (ja) * | 2005-08-16 | 2007-03-01 | Renesas Technology Corp | 半導体ウエハ及びその製造方法 |
| JP2008034508A (ja) * | 2006-07-27 | 2008-02-14 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| JP2009545117A (ja) * | 2006-07-25 | 2009-12-17 | エルジー・ケム・リミテッド | 有機発光素子の製造方法およびこれによって製造された有機発光素子 |
| JP2010520641A (ja) * | 2007-03-05 | 2010-06-10 | テッセラ，インコーポレイテッド | 貫通ビアによって前面接点に接続された後面接点を有するチップ |
| JP2012038872A (ja) * | 2010-08-06 | 2012-02-23 | On Semiconductor Trading Ltd | 半導体装置及びその製造方法 |
| JP2012084871A (ja) * | 2010-09-15 | 2012-04-26 | Elpida Memory Inc | 半導体装置、およびその製造方法、ならびにデータ処理装置 |
| CN102592982A (zh) * | 2011-01-17 | 2012-07-18 | 精材科技股份有限公司 | 晶片封装体的形成方法 |
| US8569876B2 (en) | 2006-11-22 | 2013-10-29 | Tessera, Inc. | Packaged semiconductor chips with array |
| US8587126B2 (en) | 2010-12-02 | 2013-11-19 | Tessera, Inc. | Stacked microelectronic assembly with TSVs formed in stages with plural active chips |
| US8610264B2 (en) | 2010-12-08 | 2013-12-17 | Tessera, Inc. | Compliant interconnects in wafers |
| US8610259B2 (en) | 2010-09-17 | 2013-12-17 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
| US8637968B2 (en) | 2010-12-02 | 2014-01-28 | Tessera, Inc. | Stacked microelectronic assembly having interposer connecting active chips |
| US8704347B2 (en) | 2006-11-22 | 2014-04-22 | Tessera, Inc. | Packaged semiconductor chips |
| US8736066B2 (en) | 2010-12-02 | 2014-05-27 | Tessera, Inc. | Stacked microelectronic assemby with TSVS formed in stages and carrier above chip |
| US8735287B2 (en) | 2007-07-31 | 2014-05-27 | Invensas Corp. | Semiconductor packaging process using through silicon vias |
| US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
| US8796135B2 (en) | 2010-07-23 | 2014-08-05 | Tessera, Inc. | Microelectronic elements with rear contacts connected with via first or via middle structures |
| US8847380B2 (en) | 2010-09-17 | 2014-09-30 | Tessera, Inc. | Staged via formation from both sides of chip |
| US8890322B2 (en) | 2009-03-03 | 2014-11-18 | Olympus Corporation | Semiconductor apparatus and method of manufacturing semiconductor apparatus |
| US9640437B2 (en) | 2010-07-23 | 2017-05-02 | Tessera, Inc. | Methods of forming semiconductor elements using micro-abrasive particle stream |
| CN107431017A (zh) * | 2015-03-31 | 2017-12-01 | 浜松光子学株式会社 | 半导体装置 |
| WO2021103110A1 (zh) * | 2019-11-28 | 2021-06-03 | 苏州晶方半导体科技股份有限公司 | 芯片封装结构以及封装方法 |
| WO2021199680A1 (ja) * | 2020-03-31 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
-
2003
- 2003-09-25 JP JP2003333070A patent/JP2005101268A/ja active Pending
Cited By (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053149A (ja) * | 2005-08-16 | 2007-03-01 | Renesas Technology Corp | 半導体ウエハ及びその製造方法 |
| JP2009545117A (ja) * | 2006-07-25 | 2009-12-17 | エルジー・ケム・リミテッド | 有機発光素子の製造方法およびこれによって製造された有機発光素子 |
| JP2015008145A (ja) * | 2006-07-25 | 2015-01-15 | エルジー・ケム・リミテッド | 有機発光素子の製造方法およびこれによって製造された有機発光素子 |
| JP2008034508A (ja) * | 2006-07-27 | 2008-02-14 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| US8569876B2 (en) | 2006-11-22 | 2013-10-29 | Tessera, Inc. | Packaged semiconductor chips with array |
| US8704347B2 (en) | 2006-11-22 | 2014-04-22 | Tessera, Inc. | Packaged semiconductor chips |
| US8653644B2 (en) | 2006-11-22 | 2014-02-18 | Tessera, Inc. | Packaged semiconductor chips with array |
| US9070678B2 (en) | 2006-11-22 | 2015-06-30 | Tessera, Inc. | Packaged semiconductor chips with array |
| US9548254B2 (en) | 2006-11-22 | 2017-01-17 | Tessera, Inc. | Packaged semiconductor chips with array |
| EP2575166A3 (en) * | 2007-03-05 | 2014-04-09 | Invensas Corporation | Chips having rear contacts connected by through vias to front contacts |
| US8405196B2 (en) | 2007-03-05 | 2013-03-26 | DigitalOptics Corporation Europe Limited | Chips having rear contacts connected by through vias to front contacts |
| US8310036B2 (en) | 2007-03-05 | 2012-11-13 | DigitalOptics Corporation Europe Limited | Chips having rear contacts connected by through vias to front contacts |
| JP2010520641A (ja) * | 2007-03-05 | 2010-06-10 | テッセラ，インコーポレイテッド | 貫通ビアによって前面接点に接続された後面接点を有するチップ |
| US8735205B2 (en) | 2007-03-05 | 2014-05-27 | Invensas Corporation | Chips having rear contacts connected by through vias to front contacts |
| US8735287B2 (en) | 2007-07-31 | 2014-05-27 | Invensas Corp. | Semiconductor packaging process using through silicon vias |
| US8890322B2 (en) | 2009-03-03 | 2014-11-18 | Olympus Corporation | Semiconductor apparatus and method of manufacturing semiconductor apparatus |
| US9640437B2 (en) | 2010-07-23 | 2017-05-02 | Tessera, Inc. | Methods of forming semiconductor elements using micro-abrasive particle stream |
| US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
| US8796135B2 (en) | 2010-07-23 | 2014-08-05 | Tessera, Inc. | Microelectronic elements with rear contacts connected with via first or via middle structures |
| JP2012038872A (ja) * | 2010-08-06 | 2012-02-23 | On Semiconductor Trading Ltd | 半導体装置及びその製造方法 |
| US9443790B2 (en) | 2010-09-15 | 2016-09-13 | Ps4 Luxco S.A.R.L. | Semiconductor device |
| JP2012084871A (ja) * | 2010-09-15 | 2012-04-26 | Elpida Memory Inc | 半導体装置、およびその製造方法、ならびにデータ処理装置 |
| US8610259B2 (en) | 2010-09-17 | 2013-12-17 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
| US9355948B2 (en) | 2010-09-17 | 2016-05-31 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
| US8847380B2 (en) | 2010-09-17 | 2014-09-30 | Tessera, Inc. | Staged via formation from both sides of chip |
| US10354942B2 (en) | 2010-09-17 | 2019-07-16 | Tessera, Inc. | Staged via formation from both sides of chip |
| US8809190B2 (en) | 2010-09-17 | 2014-08-19 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
| US9847277B2 (en) | 2010-09-17 | 2017-12-19 | Tessera, Inc. | Staged via formation from both sides of chip |
| US9362203B2 (en) | 2010-09-17 | 2016-06-07 | Tessera, Inc. | Staged via formation from both sides of chip |
| US8637968B2 (en) | 2010-12-02 | 2014-01-28 | Tessera, Inc. | Stacked microelectronic assembly having interposer connecting active chips |
| US9269692B2 (en) | 2010-12-02 | 2016-02-23 | Tessera, Inc. | Stacked microelectronic assembly with TSVS formed in stages and carrier above chip |
| US9099296B2 (en) | 2010-12-02 | 2015-08-04 | Tessera, Inc. | Stacked microelectronic assembly with TSVS formed in stages with plural active chips |
| US9368476B2 (en) | 2010-12-02 | 2016-06-14 | Tessera, Inc. | Stacked microelectronic assembly with TSVs formed in stages with plural active chips |
| US8587126B2 (en) | 2010-12-02 | 2013-11-19 | Tessera, Inc. | Stacked microelectronic assembly with TSVs formed in stages with plural active chips |
| US9620437B2 (en) | 2010-12-02 | 2017-04-11 | Tessera, Inc. | Stacked microelectronic assembly with TSVS formed in stages and carrier above chip |
| US8736066B2 (en) | 2010-12-02 | 2014-05-27 | Tessera, Inc. | Stacked microelectronic assemby with TSVS formed in stages and carrier above chip |
| US9224649B2 (en) | 2010-12-08 | 2015-12-29 | Tessera, Inc. | Compliant interconnects in wafers |
| US8610264B2 (en) | 2010-12-08 | 2013-12-17 | Tessera, Inc. | Compliant interconnects in wafers |
| US8796828B2 (en) | 2010-12-08 | 2014-08-05 | Tessera, Inc. | Compliant interconnects in wafers |
| CN102592982A (zh) * | 2011-01-17 | 2012-07-18 | 精材科技股份有限公司 | 晶片封装体的形成方法 |
| US10622403B2 (en) | 2015-03-31 | 2020-04-14 | Hamamatsu Photonics K.K. | Semiconductor device manufacturing method |
| US10141368B2 (en) | 2015-03-31 | 2018-11-27 | Hamamatsu Photonics K.K. | Semiconductor device |
| CN107431017A (zh) * | 2015-03-31 | 2017-12-01 | 浜松光子学株式会社 | 半导体装置 |
| US10403676B2 (en) | 2015-03-31 | 2019-09-03 | Hamamatsu Photonics K.K. | Semiconductor device manufacturing method |
| US10615220B2 (en) | 2015-03-31 | 2020-04-07 | Hamamatsu Photonics K.K. | Semiconductor device and manufacturing method thereof |
| US10622402B2 (en) | 2015-03-31 | 2020-04-14 | Hamamatsu Photonics K.K. | Semiconductor device |
| EP3279926A4 (en) * | 2015-03-31 | 2018-11-07 | Hamamatsu Photonics K.K. | Semiconductor device |
| CN107431017B (zh) * | 2015-03-31 | 2020-12-04 | 浜松光子学株式会社 | 半导体装置 |
| CN114050124A (zh) * | 2015-03-31 | 2022-02-15 | 浜松光子学株式会社 | 半导体装置的制造方法 |
| EP3961687A1 (en) * | 2015-03-31 | 2022-03-02 | Hamamatsu Photonics K.K. | Semiconductor device manufacturing method |
| CN114050124B (zh) * | 2015-03-31 | 2025-09-30 | 浜松光子学株式会社 | 半导体装置的制造方法 |
| WO2021103110A1 (zh) * | 2019-11-28 | 2021-06-03 | 苏州晶方半导体科技股份有限公司 | 芯片封装结构以及封装方法 |
| WO2021199680A1 (ja) * | 2020-03-31 | 2021-10-07 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
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