JP2005079441A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2005079441A JP2005079441A JP2003310031A JP2003310031A JP2005079441A JP 2005079441 A JP2005079441 A JP 2005079441A JP 2003310031 A JP2003310031 A JP 2003310031A JP 2003310031 A JP2003310031 A JP 2003310031A JP 2005079441 A JP2005079441 A JP 2005079441A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- forming
- wafer
- mask layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003310031A JP2005079441A (ja) | 2003-09-02 | 2003-09-02 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003310031A JP2005079441A (ja) | 2003-09-02 | 2003-09-02 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005079441A true JP2005079441A (ja) | 2005-03-24 |
| JP2005079441A5 JP2005079441A5 (cg-RX-API-DMAC10.html) | 2006-10-05 |
Family
ID=34412015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003310031A Pending JP2005079441A (ja) | 2003-09-02 | 2003-09-02 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005079441A (cg-RX-API-DMAC10.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278820A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置 |
| JP2006310376A (ja) * | 2005-04-26 | 2006-11-09 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2007284681A (ja) * | 2006-04-19 | 2007-11-01 | Samsung Electronics Co Ltd | 樹脂組成物、これを利用したパターン形成方法、及びキャパシタ形成方法 |
| JP2007311507A (ja) * | 2006-05-17 | 2007-11-29 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133313A (ja) * | 2001-10-25 | 2003-05-09 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2003197621A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 埋め込み配線の形成方法 |
| JP2004311570A (ja) * | 2003-04-03 | 2004-11-04 | Nec Electronics Corp | 半導体装置とその製造方法 |
-
2003
- 2003-09-02 JP JP2003310031A patent/JP2005079441A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133313A (ja) * | 2001-10-25 | 2003-05-09 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2003197621A (ja) * | 2001-12-27 | 2003-07-11 | Sony Corp | 埋め込み配線の形成方法 |
| JP2004311570A (ja) * | 2003-04-03 | 2004-11-04 | Nec Electronics Corp | 半導体装置とその製造方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278820A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置 |
| JP2006310376A (ja) * | 2005-04-26 | 2006-11-09 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2007284681A (ja) * | 2006-04-19 | 2007-11-01 | Samsung Electronics Co Ltd | 樹脂組成物、これを利用したパターン形成方法、及びキャパシタ形成方法 |
| JP2007311507A (ja) * | 2006-05-17 | 2007-11-29 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4977842B2 (ja) | 半導体素子 | |
| JP2015167153A (ja) | 集積回路装置及びその製造方法 | |
| JP2006286932A (ja) | 半導体装置の製造方法 | |
| US6930038B2 (en) | Dual damascene partial gap fill polymer fabrication process | |
| JP3408746B2 (ja) | 半導体装置の製造方法 | |
| US7645679B2 (en) | Method for forming isolation layer in semiconductor devices | |
| JP4023236B2 (ja) | 金属配線の形成方法 | |
| JP2012033607A (ja) | 半導体装置の製造方法 | |
| KR100422949B1 (ko) | 소자분리막 형성 방법 | |
| KR100906306B1 (ko) | 반도체 소자의 구리 배선 형성 방법 | |
| JPH08288385A (ja) | 半導体装置の製造方法 | |
| JP2001332621A (ja) | 半導体装置及びその製造方法 | |
| US8932937B2 (en) | Photoresist mask-free oxide define region (ODR) | |
| KR100789612B1 (ko) | 금속 배선 형성 방법 | |
| KR100800728B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
| US7429518B2 (en) | Method for forming shallow trench isolation of semiconductor device | |
| US20090263968A1 (en) | Method of fabricating semiconductor device | |
| JP2006344815A (ja) | 半導体装置の製造方法 | |
| KR100870299B1 (ko) | 반도체 소자의 제조방법 | |
| KR20030002942A (ko) | 반도체 소자의 금속 배선 형성 방법 | |
| JP2006049534A (ja) | 半導体装置の製造方法及び半導体装置 | |
| KR100707595B1 (ko) | 반도체 소자의 소자 분리막 형성 방법 | |
| JP2011124427A (ja) | 半導体装置の製造方法 | |
| US7842608B2 (en) | Method for manufacturing semiconductor device having via plug | |
| JPH1140667A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060821 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060821 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081020 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20091110 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20100524 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100615 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101026 |