JP2005064037A - プラズマ処理装置及びアッシング方法 - Google Patents

プラズマ処理装置及びアッシング方法 Download PDF

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Publication number
JP2005064037A
JP2005064037A JP2003207379A JP2003207379A JP2005064037A JP 2005064037 A JP2005064037 A JP 2005064037A JP 2003207379 A JP2003207379 A JP 2003207379A JP 2003207379 A JP2003207379 A JP 2003207379A JP 2005064037 A JP2005064037 A JP 2005064037A
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Japan
Prior art keywords
plasma
chamber
plasma processing
processed
processing apparatus
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JP2003207379A
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English (en)
Japanese (ja)
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JP2005064037A5 (cg-RX-API-DMAC7.html
Inventor
Yoshinori Iino
由規 飯野
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Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2003207379A priority Critical patent/JP2005064037A/ja
Priority to US10/567,665 priority patent/US7491908B2/en
Priority to PCT/JP2004/011657 priority patent/WO2005015628A1/ja
Priority to KR1020067002878A priority patent/KR100835630B1/ko
Priority to EP04771632A priority patent/EP1655770A4/en
Priority to CNB2004800261699A priority patent/CN100466193C/zh
Priority to KR1020087008103A priority patent/KR100895253B1/ko
Priority to TW093124253A priority patent/TW200522198A/zh
Publication of JP2005064037A publication Critical patent/JP2005064037A/ja
Publication of JP2005064037A5 publication Critical patent/JP2005064037A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
JP2003207379A 2003-08-12 2003-08-12 プラズマ処理装置及びアッシング方法 Withdrawn JP2005064037A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2003207379A JP2005064037A (ja) 2003-08-12 2003-08-12 プラズマ処理装置及びアッシング方法
US10/567,665 US7491908B2 (en) 2003-08-12 2004-08-06 Plasma processing device and ashing method
PCT/JP2004/011657 WO2005015628A1 (ja) 2003-08-12 2004-08-06 プラズマ処理装置及びアッシング方法
KR1020067002878A KR100835630B1 (ko) 2003-08-12 2004-08-06 플라즈마 처리 장치 및 에싱 방법
EP04771632A EP1655770A4 (en) 2003-08-12 2004-08-06 PLASMA PROCESSING DEVICE AND ASHING METHOD
CNB2004800261699A CN100466193C (zh) 2003-08-12 2004-08-06 等离子体处理装置和灰化方法
KR1020087008103A KR100895253B1 (ko) 2003-08-12 2004-08-06 플라즈마 처리 장치 및 에싱 방법
TW093124253A TW200522198A (en) 2003-08-12 2004-08-12 Plasma treatment apparatus and ashing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003207379A JP2005064037A (ja) 2003-08-12 2003-08-12 プラズマ処理装置及びアッシング方法

Publications (2)

Publication Number Publication Date
JP2005064037A true JP2005064037A (ja) 2005-03-10
JP2005064037A5 JP2005064037A5 (cg-RX-API-DMAC7.html) 2006-06-15

Family

ID=34131427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003207379A Withdrawn JP2005064037A (ja) 2003-08-12 2003-08-12 プラズマ処理装置及びアッシング方法

Country Status (7)

Country Link
US (1) US7491908B2 (cg-RX-API-DMAC7.html)
EP (1) EP1655770A4 (cg-RX-API-DMAC7.html)
JP (1) JP2005064037A (cg-RX-API-DMAC7.html)
KR (2) KR100895253B1 (cg-RX-API-DMAC7.html)
CN (1) CN100466193C (cg-RX-API-DMAC7.html)
TW (1) TW200522198A (cg-RX-API-DMAC7.html)
WO (1) WO2005015628A1 (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033073A (ja) * 2007-07-31 2009-02-12 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2013110302A (ja) * 2011-11-22 2013-06-06 Ulvac Japan Ltd プラズマ処理装置
KR20140050073A (ko) * 2011-08-10 2014-04-28 어플라이드 머티어리얼스, 인코포레이티드 선택적인 질화 프로세스를 위한 방법 및 장치
WO2020205203A1 (en) * 2019-04-05 2020-10-08 Applied Materials, Inc. Process system with variable flow valve
JP2023016557A (ja) * 2021-07-21 2023-02-02 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050284573A1 (en) * 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
JPWO2009063755A1 (ja) * 2007-11-14 2011-03-31 東京エレクトロン株式会社 プラズマ処理装置および半導体基板のプラズマ処理方法
US8741778B2 (en) * 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
WO2015171335A1 (en) * 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
KR102301585B1 (ko) * 2016-03-13 2021-09-10 어플라이드 머티어리얼스, 인코포레이티드 선택적 건식 에칭을 위한 방법들 및 장치
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
US20200126769A1 (en) * 2018-10-23 2020-04-23 Hzo, Inc. Plasma ashing of coated substrates
US11508573B2 (en) * 2019-12-31 2022-11-22 Micron Technology, Inc. Plasma doping of gap fill materials
US20230059730A1 (en) * 2021-08-19 2023-02-23 University Of Maryland, College Park Atomic-scale materials processing based on electron beam induced etching assisted by remote plasma
KR20250160952A (ko) * 2023-03-21 2025-11-14 엠케이에스 인코포레이티드 광학 방출 분광법을 사용한 실시간 라디칼 출력 모니터링

Family Cites Families (16)

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JPS5449073A (en) * 1977-09-26 1979-04-18 Mitsubishi Electric Corp Plasma processing unit
US5441568A (en) 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
JPH0945495A (ja) * 1995-08-02 1997-02-14 Ulvac Japan Ltd プラズマ処理装置
US5866986A (en) * 1996-08-05 1999-02-02 Integrated Electronic Innovations, Inc. Microwave gas phase plasma source
JPH10298787A (ja) * 1997-04-25 1998-11-10 Shibaura Eng Works Co Ltd ドライエッチング装置
JP3218348B2 (ja) * 1998-05-21 2001-10-15 株式会社アルバック プラズマアッシング方法
JP2000012526A (ja) 1998-06-25 2000-01-14 Mitsubishi Electric Corp プラズマ処理装置およびプラズマ処理方法
US6383301B1 (en) * 1998-08-04 2002-05-07 E. I. Du Pont De Nemours And Company Treatment of deagglomerated particles with plasma-activated species
JP2000100790A (ja) 1998-09-22 2000-04-07 Canon Inc プラズマ処理装置及びそれを用いた処理方法
JP2000183040A (ja) * 1998-12-15 2000-06-30 Canon Inc 有機層間絶縁膜エッチング後のレジストアッシング方法
US6281135B1 (en) * 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
JP2001115267A (ja) * 1999-10-19 2001-04-24 Canon Inc プラズマ処理装置及び処理方法
US6426304B1 (en) * 2000-06-30 2002-07-30 Lam Research Corporation Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
JP2002075961A (ja) * 2000-08-24 2002-03-15 Toshiba Corp 半導体装置の製造方法
US7083991B2 (en) * 2002-01-24 2006-08-01 Novellus Systems, Inc. Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033073A (ja) * 2007-07-31 2009-02-12 Renesas Technology Corp 半導体集積回路装置の製造方法
KR20190086049A (ko) * 2011-08-10 2019-07-19 어플라이드 머티어리얼스, 인코포레이티드 선택적인 질화 프로세스를 위한 방법 및 장치
KR20140050073A (ko) * 2011-08-10 2014-04-28 어플라이드 머티어리얼스, 인코포레이티드 선택적인 질화 프로세스를 위한 방법 및 장치
JP2014527300A (ja) * 2011-08-10 2014-10-09 アプライド マテリアルズ インコーポレイテッド 選択的窒化プロセスのための方法および装置
US10049881B2 (en) 2011-08-10 2018-08-14 Applied Materials, Inc. Method and apparatus for selective nitridation process
KR102001245B1 (ko) * 2011-08-10 2019-07-17 어플라이드 머티어리얼스, 인코포레이티드 선택적인 질화 프로세스를 위한 방법 및 장치
KR102196413B1 (ko) * 2011-08-10 2020-12-29 어플라이드 머티어리얼스, 인코포레이티드 선택적인 질화 프로세스를 위한 방법 및 장치
US10950698B2 (en) 2011-08-10 2021-03-16 Applied Materials, Inc. Method and apparatus for selective nitridation process
US11581408B2 (en) 2011-08-10 2023-02-14 Applied Materials, Inc. Method and apparatus for selective nitridation process
JP2013110302A (ja) * 2011-11-22 2013-06-06 Ulvac Japan Ltd プラズマ処理装置
WO2020205203A1 (en) * 2019-04-05 2020-10-08 Applied Materials, Inc. Process system with variable flow valve
JP2023016557A (ja) * 2021-07-21 2023-02-02 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置
JP7605569B2 (ja) 2021-07-21 2024-12-24 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置

Also Published As

Publication number Publication date
CN1849701A (zh) 2006-10-18
EP1655770A1 (en) 2006-05-10
TWI303850B (cg-RX-API-DMAC7.html) 2008-12-01
KR20080036157A (ko) 2008-04-24
US7491908B2 (en) 2009-02-17
KR20060038468A (ko) 2006-05-03
US20070151956A1 (en) 2007-07-05
TW200522198A (en) 2005-07-01
KR100895253B1 (ko) 2009-04-29
CN100466193C (zh) 2009-03-04
EP1655770A4 (en) 2009-01-14
WO2005015628A1 (ja) 2005-02-17
KR100835630B1 (ko) 2008-06-09

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