JP2005055893A - リソグラフィ用反射防止ハードマスク組成物およびそれを用いた半導体デバイスの製造方法 - Google Patents
リソグラフィ用反射防止ハードマスク組成物およびそれを用いた半導体デバイスの製造方法 Download PDFInfo
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- JP2005055893A JP2005055893A JP2004223337A JP2004223337A JP2005055893A JP 2005055893 A JP2005055893 A JP 2005055893A JP 2004223337 A JP2004223337 A JP 2004223337A JP 2004223337 A JP2004223337 A JP 2004223337A JP 2005055893 A JP2005055893 A JP 2005055893A
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】本発明の組成物は、完全縮合ポリヘドラルオリゴシルセスキオキサン、{RSiO1.5}n(但し、nは8である)と、少なくとも1つの発色団部分および透明部分とを含む。本発明の方法は、基板上に材料層を設けるステップと、この材料層の上に反射防止ハードマスク層を形成するステップとを含む。この反射防止ハードマスク層は、完全縮合ポリヘドラルオリゴシルセスキオキサン、{RSiO1.5}n(但し、nは8である)と、少なくとも1つの発色団部分および透明部分とを含む。
【選択図】図1
Description
実施例1からの所望のPOSS材料を、プロピレングリコールモノメチルエーテルアセテート(PGMEA)または乳酸エチルに、溶媒に対して12重量パーセントから溶媒に対して14重量パーセントの濃度で溶解した。この溶液に、DayChemから市販されている架橋剤テトラメトキシメチルグリコールウリルをPOSSに対して8重量部の濃度で、かつジ(t−ブチルフェニル)ヨードニウムペルフルオロブチルスルホネート(DtBPI−PFBuS)をPOSSに対して4重量部の濃度で添加した。
実施例2に記載したように調製した、オクタキス{(グリシドキシプロピル)ジメチルシロキシ}シルセスキオキサン、オクタキス{(エチルシクロヘキシルプロピル)ジメチルシロキシ}シルセスキオキサン、オクタキス{(プロパノール)ジメチルシロキシ}シルセスキオキサン、およびオクタキス{(エチルフェニルアセテート)ジメチルシロキシ}シルセスキオキサンをそれぞれ含む、処方POSS A、POSS B、POSS C、およびPOSS Dを、200ミリメートルのシリコン・ウェーハ上に、3,000回転/分で60秒間スピンコートした。膜厚は、1,700〜2,500オングストロームの範囲であった。このスピンキャスト膜を200℃で60秒間硬化させた。n & k Technology, Inc.製のn&kアナライザーを用いて、光学定数、すなわち屈折率nおよび193nmでの吸光係数kを測定した。
POSS AとPOSS Dの混合物を用いて、実施例3に記載したようにハードマスク層を形成した。PAR715アクリル系フォトレジスト(Sumitomoから入手)の層を、硬化した反射防止ハードマスク層の上に、約300nmの厚みにスピンコートした。このフォトレジストを、130℃で60秒間加熱処理した。次いで、APSM(交換位相シフトマスク)レチクルを用いた通常の環状照明を有する0.6NA193nmNikonステッパーを用いて、フォトレジスト層に描画した。パターン露光の後、130℃で60秒間フォトレジスト層を加熱処理した。次いで、市販の現像液(0.26MのTMAH)を用いて、画像を現像した。得られたパターンは、113.75nmと122.5nmの等しい線と間隔のパターンを示した。
Claims (22)
- 完全縮合ポリヘドラルオリゴシルセスキオキサン、{RSiO1.5}n(但し、nは8である)と、
少なくとも1つの発色団部分および透明部分と
を含む反射防止ハードマスク組成物。 - 固形分ベースで、50重量%〜98重量%のポリヘドラルオリゴシルセスキオキサンを含む、請求項1に記載の組成物。
- 各発色団部分が、フェニル、クリセン、ピレン、フルオランテン、アントロン、ベンゾフェノン、チオキサントン、アントラセン、アントラセン誘導体、9−アントランセンメタノール、フェノールチアジン、不飽和炭素−炭素二重結合を含む非芳香族化合物、飽和炭素−炭素結合を含む化合物、および上記発色団の少なくとも1種を含む組成物からなる群から選択される、請求項1に記載の組成物。
- 各透明部分が、水素、および不飽和炭素−炭素二重結合がない有機基からなる群から選択される、請求項1に記載の組成物。
- 少なくとも1つの透明部分がフッ素を含む、請求項1に記載の組成物。
- 同数の発色団部分および透明部分を含む、請求項1に記載の組成物。
- 架橋成分をさらに含む、請求項1に記載の組成物。
- 前記架橋成分が、エポキシド、アルコール、芳香族アルコール、ヒドロキシベンジル、フェノール、ヒドロキシメチルベンジル、脂環式アルコール、シクロヘキサノイル、非環式アルコール、フルオロカーボンアルコール、脂肪族アルコール、アミノ基、ビニルエーテル、および上記の架橋成分の少なくとも1種を含む組成物からなる群から選択される、請求項7に記載の組成物。
- 固形分ベースで、50重量%以下の架橋成分を含む、請求項7に記載の組成物。
- 追加の架橋剤をさらに含む、請求項1に記載の組成物。
- 前記追加の架橋剤が、グリコールウリル、メチル化グリコールウリル、ブチル化グリコールウリル、テトラメトキシメチルグリコールウリル、メチルプロピルテトラメトキシメチルグリコールウリル、メチルフェニルテトラメトキシメチルグリコールウリル、2,6−ビス(ヒドロキシメチル)−p−クレゾール、エーテル化アミノ樹脂、メチル化メラミン樹脂、N−メトキシメチル−メラミン、ブチル化メラミン樹脂、N−ブトキシメチル−メラミン、ビス−エポキシ、ビス−フェノール、ビスフェノール−A、およびエポキシド、アルコール、芳香族アルコール、ヒドロキシベンジル、フェノール、ヒドロキシメチルベンジル、脂環式アルコール、シクロヘキサノイル、非環式アルコール、フルオロカーボンアルコール、脂肪族アルコール、アミノ基またはビニルエーテルを含む組成物からなる群から選択される、請求項10に記載の組成物。
- 酸発生剤をさらに含む、請求項1に記載の組成物。
- 前記酸発生剤が、2,4,4,6−テトラブロモシクロヘキサジエノン、ベンゾイントシレート、2−ニトロベンジルトシレート、有機スルホン酸のアルキルエステル、および上記の酸発生剤の少なくとも1種を含む組合せからなる群から選択される、請求項14に記載の組成物。
- 前記酸発生剤が熱酸発生剤である、請求項12に記載の組成物。
- 固形分べースで、1重量%〜20重量%の酸発生剤を含む、請求項12に記載の組成物。
- 半導体デバイスの加工方法であって、
基板上に材料層を設けるステップと、
前記材料層の上に反射防止ハードマスク層を形成するステップと
を含み、前記反射防止ハードマスク層が、
完全縮合ポリヘドラルオリゴシルセスキオキサン、{RSiO1.5}n(但し、nは8である)と、
少なくとも1つの発色団部分および透明部分とを含む方法。 - 前記反射防止ハードマスク層の上に放射線感受性イメージング層を形成するステップと、
前記放射線感受性イメージング層を放射線にパターン露光することにより当該イメージング層に放射線露光領域のパターンを作るステップと、
前記放射線感受性イメージング層および前記反射防止ハードマスク層の部分を選択的に除去してこの材料層の部分を露出するステップと、
前記材料層の前記露出部分をエッチングすることによりパターン化された材料のフィーチャを基板上に形成するステップと
をさらに含む、請求項16に記載の方法。 - 残った放射線感受性イメージング層と反射防止ハードマスク層を、前記材料層から除去するステップをさらに含む、請求項17に記載の方法。
- 前記放射線が、約200ナノメートル以下の波長を有する紫外線である、請求項17に記載の方法。
- 前記放射線が電子ビーム放射線である、請求項17に記載の方法。
- 前記反射防止ハードマスク層の厚みが、0.03マイクロメートル〜5マイクロメートルである、請求項16に記載の方法。
- 基板と、
前記基板の上の材料層と、
前記材料層の上のパターン化された反射防止ハードマスク層と、
前記反射防止ハードマスク層の上のパターン化された放射線感受性イメージング層と
を含み、前記パターン化された反射防止ハードマスク層が、
完全縮合ポリヘドラルオリゴシルセスキオキサン、{RSiO1.5}n(但し、nは8である)と、
少なくとも1つの発色団部分および透明部分とを含むパターン化リソグラフィ構造。
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US20050031964A1 (en) | 2005-02-10 |
TW200513803A (en) | 2005-04-16 |
KR100628824B1 (ko) | 2006-09-27 |
CN1321352C (zh) | 2007-06-13 |
US7223517B2 (en) | 2007-05-29 |
CN1595296A (zh) | 2005-03-16 |
TWI290265B (en) | 2007-11-21 |
KR20050015992A (ko) | 2005-02-21 |
JP4042981B2 (ja) | 2008-02-06 |
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